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(1) Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array，Ya-Xiong Zhou，Yi Li(#)，Yu-Ting Su，Zhuo-Rui Wang，Ling-Yi Shih，Ting-Chang Chang(*)，Kuan-Chang Chang，Shi-Bing Long，Simon M. Szef，Xiang -Shui Miao (*)，Nanoscale，9：6649~6657，2017 (cover paper) (2) Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory，Zhuo-Rui Wang，Yu-Ting Su(#)，Yi Li，Ya-Xiong Zhou，Tian-Jian Chu，Kuan-Chang Chang，Ting-Chang Chang(*)，Tsung-Ming Tsai，Simon M. Sze， Xiang -Shui Miao(*)， IEEE ELECTRON DEVICE LETTERS，38（2）：179~182，2017 (3) Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar，Yi Li，Ya-Xiong Zhou(#)，Lei Xu，Ke Lu，Zhuo-Rui Wang，Nian Duan，Lei Jiang，Long Cheng，Ting-Chang Chang(*)，Kuan-Chang Chang，Hua-Jun Sun，Kan-Hao Xue，Xiang-Shui Miao(*)，ACS Applied Materials & Interfaces， 8：345 59~34567，2016 （4）Variations of Local Motifs around Ge Atoms in Amorphous GeTe Ultrathin Films, P Ma, H Tong, T Huang, M Xu, NN Yu, XM Cheng, CJ Sun, XS Miao (*), JOURNAL OF PHYSICAL CHEMISTRY C, 121: 1122~1128, 2016 (5) Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks，Y Li , L Xu , Y P Zhong , Y X Zhou , S J Zhong, Y Z Hu ,L O Chua and X S Miao ，Advanced Electronic Materials. 1500125，2015 （Cover Paper） （6）Metallic resist for phase-change lithography, Zeng BJ, Huang JZ, Ni RW, Yu NN, Wei W, Hu YZ, Li Z, Miao XS, Scientific Reports （Nature Publishing Group), volume 4, 5300, 2014. (7) Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems, Y. Li, Y. P. Zhong, J.J. Zhang, L. Xu, Q. Wang, H. J. Sun, H. Tong, X. M. Cheng, X. S. Miao, Scientific Reports （Nature Publishing Group), volume 4, 4906，2014. (8) Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao, Scientific Reports （Nature Publishing Group), volume 3, 1619，2013. （9）Transient Structures and Possible Limits of Data Recording in Phase-Change Materials Jianbo Hu, Giovanni M. Vanacore, Zhe Yang, Xiangshui Miao, and Ahmed H. Zewail, ACS Nano，VOL. 9，NO. 7，6728–6737，2015 (10) Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films, H. Tong, Z. Yang, N. N. Yu, L. J. Zhou, and X. S. Miao, Applied Physics Letters, 107, 082101,2015. (11)Local order origin of thermal stability enhancement in amorphous Ag doping GeTe, L. Xu, Y. Li, N. N. Yu, Y. P. Zhong, and X. S. Miao, Applied Physics Letters 106, 031904, 2015 (12) 16 Boolean logics in three steps with two anti-serially connected memristors, Yaxiong Zhou, Yi Li, Lei Xu, Shujing Zhong, Huajun Sun, and Xiangshui Miao, Applied Physics Letters, 106, 233502, 2015 (13) Continuous controllable amorphization ratio of nanoscale phase change memory cells, Q. He, Z. Li, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Applied Physics Letters, 104, 223502, 2014 (14) Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F., Li Z., Peng J. H., Liu C., Chen W., Miao X.S., Applied Physics Letters, 103(23), 233501, 2013 (15) Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Yu N.N., Tong H., Zhou J., Elbashir A.A., Miao X.S., Applied Physics Letters, 103(6), 061910, 2013 (16) Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Li Y., Zhong Y.P., Zhang J.J., Xu X.H., Wang Q., Xu L, Sun H.J., Miao X.S., Applied Physics Letters,103(4), 043501, 2013 (17) AgInSbTe memristor with gradual resistance tuning, Zhang J.J., Sun H.J., Li Y., Wang Q., Xu X.H., Miao X.S., Applied Physics Letters,102(18), 183513, 2013 (18) Picosecond amorphization of chalcogenides material: From scattering to ionization, Wang, P. Ju, C., Chen, W, Huang, D.Q, X. S. Miao, Applied Physics Letters, 102(11), 112108, 2013 (19) Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition, Liu, J.D., Miao, X.S. ; Tong, F. ; Luo, W. ; Xia, Z.C., Applied Physics Letters, 102(10), 102402,2013 (20) Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS, APPLIED PHYSICS LETTERS, Volume: 101, Issue: 14, Article Number: 142107, OCT 2012.
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