徐静平 - 华中科技大学 - 光学与电子信息学院

个人简介

1982.1毕业于华中工学院固体电子学系半导体物理与器件专业，84年获该专业工学硕士学位，并留校任教。1993年获电子材料与元件专业工学博士学位，95年12月至99年6月在香港大学郑耀宗教授(中科院院士、微电子学专家、原香港大学校长)以及黎沛涛教授指导下做博士后研究工作。近几年来，作为访问教授每年赴香港大学或香港理工大学从事2-3个月的合作研究。2000年2月晋升为教授，2002年6月被评聘为博导。自1984年以来，一直从事微电子器件及其集成技术方面的教学与研究工作。2003年至今，作为项目主持人完成国家自然科学基金项目5项，在研2项，是国家自然科学基金通讯评审专家及上会评审专家。主要从事先进的Si、Ge、SiC、GaAs、InGaAs为基小尺寸MOS器件、二维层状半导体MoS2和绝缘层上锗(GeOI)薄膜晶体管以及新型非挥发性半导体存储器方面的研究工作，迄今在国际重要期刊杂志共发表学术论文100余篇。

研究领域

（1）先进的小尺寸CMOS集成器件原理、结构、工艺及应用研究；（2）二维层状结构过渡金属硫化物在下一代纳电子/光电子器件中的应用研究；（3）新型非挥发性半导体存储器研究。

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1）L. S. Wang,J. P. Xu*, L. Liu, H. H. Lu, P. T. Lai, and W. M. Tang,Interfacial and electrical properties of InGaAs metal-oxide- semiconductor capacitor with TiON/TaON multilayer composite gate dielectric, Appl. Phys. Lett., vol. 106, p. 123504, 2015. 2）L. S. Wang,J. P. Xu*, L. Liu, H. H. Lu, P. T. Lai, and W. M. Tang, Plasma-nitrided GaO(GdO) as interfacial passivation layer for InGaAs metal-oxide-semiconductor capacitor with HfTiON gate dielectric. IEEE Trans. on Electron Devices, vol. 62(4), pp. 1235-1240, 2015. 3）Li-Sheng Wang,Jing-Ping Xu*, Lu Liu, Wing-Man Tang, Pui-To Lai, Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications, Applied Physics Express, vol. 7(6), p. 061201, 2014. 4）Feng Ji,Jing-Ping Xu*, Yong Huang, Lu Liu,and P. T. Lai,Improved Interfacial and Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitor With LaTaON Passivation Layer,IEEE Trans. Electron Devices, vol. 61(11), pp. 3608-3612, 2014. 5） Li-Sheng Wang, Lu Liu,Jing-Ping Xu*, Shu-Yan Zhu, Yuan Huang, and Pui-To Lai, Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer, IEEE Trans. Electron Devices, vol. 61(3), pp. 742-746, 2014. 6） J. X. Chen,J. P. Xu*, L. Liu, X. D. Huang, P. T. Lai，Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer，IEEE Trans. Device and Materials Reliability, vol. 14(1), pp. 9-12, 2014. 7） J. X. Chen,J. P. Xu*, L. Liu, X. D. Huang, P. T. Lai, “Improved performance by using TaON/SiO2 as dual tunnel layer in Charge-Trapping nonvolatile memory”, Microelectronics Reliability, vol.54(2), pp. 393-396, 2014. 8） L. Liu,J. P. Xu*,J. X. Chen, P. T. Lai, Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3, Applied Physics A. Materials Science & Processing, vol.115(4), pp. 1317-1321, 2014. 9） L. S. Wang,J. P. Xu*, S. Y. Zhu, Y. Huang, P. T. Lai, Improved interfacial and electrical properties of GaAs metal-oxide-semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer, Appl. Phys. Lett. vol. 103, p. 092901, 2013. 10) J. X. Chen,J. P. Xu*, L. Liu, and P. T. Lai, Improved performances of metal-oxide- nitride-oxide-silicon memory with HfTiON as charge-trapping layer, Appl. Phys. Lett. vol. 103, p. 213507, 2013. 11）Jian-Xiong Chen,Jing-Ping Xu*, Lu Liu, and Pui-To Lai, Performance Improvements of Metal–Oxide–Nitride–Oxide–Silicon Nonvolatile Memory with ZrO2Charge-Trapping Layer by Using Nitrogen Incorporation, Appl. Phys. Express, vol. 6, p. 084202, 2013. 12） Zhu Shuyan,Xu Jingping*, Wang Lisheng and Huang Yuan，Improved Interface Properties of HfO2Gate Dielectric GaAs MOS Devices by Using SiNxas Interfacial Passivation Layer，Chin. Phys. B, vol. 22(9), pp. 097301-1-4, 2013. 13）L. Liu,J. P. Xu*, F. Ji, J. X. Chen, P. T. Lai, “Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure, Applied Physics Letters, vol. 101(13), p. 133503, 2012. 14） L. Liu,J. P. Xu*, F. Ji, J. X. Chen, P. T. Lai, Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications, Applied Physics Letters, vol. 101(3), p. 033501, 2012. 15） L. Liu,J. P. Xu*, J. X. Chen, X. D. Huang, P. T. Lai, Ultrathin HfON/SiO2Dual Tunneling Layer for Improving the Electrical Properties of Metal-Oxide-Nitride-Oxide- Silicon Memory, Thin Solid Films, vol. 524, pp. 263-267, 2012. 16）F. Ji,J. P. Xu*, J. G. Liu, C. X. Li, and P. T. Lai, Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer, Applied Physics Letters, vol. 98, pp. 182901-1-3, 2011. 17） F. Ji,J. P. Xu*, P. T. Lai, C. Xi Li, and J. G. Liu, Improved Interfacial Properties of Ge MOS Capacitor With High-k Dielectric by Using TaON/GeON Dual Interlayer, IEEE Electron Device Letters, vol. 32, pp. 122~124, 2011. 18） L. Liu,J. P. Xu*, X. D. Huang, P. T. Lai, A Novel MONOS Memory with High-k HfLaON as Charge-Storage Layer, IEEE Transactions onDevice and Materials Reliability, vol. 11(2), pp. 244-247, 2011.