李震 - 华中科技大学 - 光学与电子信息学院

个人简介

1987年毕业于华中理工大学 2000年在华中科技大学材料物理与化学专业获硕士学位 2006年在华中科技大学微电子学与固体电子学获工学博士学位目前，在华中科技大学光学与电子信息学院微电子学系信息存储材料及器件研究所从事本科生和研究生教学、科研工作。

研究领域

主要从事信息存储材料、器件和芯片研究，包括相变随机存储器、光存储、阻变随机存储器、忆阻器等，以及相应的存储器件测试技术

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

(1) Teng Luo, Zhen Li, Qiang He, Xiangshui Miao. Pr-based metallic glass films used as resist for phase-change lithography. OPTICS EXPRESS, 24(6):5754-5762(2016) (2) Wei Zhou, Zhen Li*, Qiang He, Xiang-shui Miao. Modeling of transient thermal dissipation of nanoscale phase-change memory cells in the pulse domain. International Journal of Heat and Mass Transfer, 94 :301–305 (2016) (3)Qiang He, Zhen Li, Chang Liu, Xiang-ru Meng, Ju-hong Peng, Zhi-bo Lai and Xiang-shui Miao，Temperature dependence of SET switching characteristics in phase-change memory cells, J. Phys. D: Appl. Phys. 49 (2016) 385101 (6pp) (4) Ri Wen Ni, Bi Jian Zeng, Jun Zhu Huang, Teng Luo, Zhen Li*, Xiang Shui Miao, Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography, Optical Engineering 54(4), 045103 (April 2015). (5)Zeng BJ,Huang JZ,Ni RW,Yu NN,Wei W,Hu YZ,Li Z,Miao XS, Metallic resist for phase-change lithography, Scientific Reports（Nature Publishing Group), volume 4, 5300, 2014. (6) Q. He, Z. Li*, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Continuous controllable amorphization ratio of nanoscale phase change memory cells, Applied Physics Letters, 104, 223502, 2014. (7) Bi Jian Zeng, Ri Wen Ni, Jun Zhu Huang, Zhen Li*and Xiang Shui Miao, Polarization-based multiple-bit optical data storage, J. Opt. 16(2014) 125402 (7pp). (8) Deng Y. F.,Li Z*.,Peng J. H., Liu C., Chen W.,Miao X.S.,Thermal dispersion and secondary crystallization of phase change memory cells, Applied Physics Letters, 103(23), 233501, 2013. (9) P. Wang, C. Ju, W. Chen, D. Q. Huang, X. W. Guan, Z. Li, X. M. Cheng, and X. S. Miao, Picosecond amorphization of chalcogenides material: From scattering to ionization,Applied Physics Letters,102(11), 112108, 2013. (10) Chen W, Li Z*, Peng JH, Deng YF, Miao XS, Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Applied Physics Letters, 101(14), 142107, 2012. (11) Huang DQ, Miao XS, Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y, Long XM, Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Applied Physics Letters, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011 (12) L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P.An, Jiandong Huang, Daohong Yang, Chang Liu, SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer, Solid-State Electronics 56 (2011) 191–195.