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个人简介

教育背景 Sept.1995~July 1999, Electronic Material and Device at UESTC, 1995年9月~1999年7月:磁性材料 专业,本科,信息材料工程学院,电子科技大学 Sept.1999~Apr 2002, Material Physics and Chemistry at UESTC, 1999年9月~2002年4月:材料物理与化学 专业,硕士,导师:杨仕清 教授,微电子与固体电子学院,电子科技大学 Feb.2003~June,2004, Tongji Univ. German courses, 2003年2月~2004年6月:德语培训,同济大学 Sept.2004~July, 2008, theoretical physics under Prof. Helmut Eschrig, at TU Dresden, 2004年9月~2008年7月:理论物理 专业,博士,Dresden工业大学,德国 工作履历 2014年7月~8月, 丹麦工业大学,访问研究 2011年8月~今 ,电子科技大学,副教授 2008年8月~2011年7月,电子科技大学,讲师 2002年4月~2008年7月,电子科技大学,助教 Apr. 2002- July. 2008, Teaching assistant at UESTC, Chengdu, China Aug. 2008~July, 2011, Lecturer at UESTC, Chengdu, China Aug. 2011~now Associate Professor at UESTC July. 2014~Aug. 2014, Visiting scienctists, Denmark Technical University

研究领域

1. Electronic structure and magnetism by density functional theory (Main direction) 材料的电子结构,输运特性及磁性能等第一性原理计算 2. Micromagnetic simulations (experienced) 微磁学模拟 3. Magnetic thin films, esp. magnetoresistance thin films and ferrites for microwave devices 磁性薄膜及其高频特性,新效应

近期论文

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[36]Qiuru Wang, Wenxu Zhang*, Bin Peng, and Wanli Zhang, Inverse spin Hall effects in Nd doped SrTiO3, AIP ADVANCES 7, 125218 (2017), https://doi.org/10.1063/1.4986324 [35]Wenxu Zhang*, Jiantao Qin, Zhishuo Huang, Wanli Zhang, THE MECHANISM OF LAYER NUMBER AND STRAIN DEPENDENT BANDGAP OF 2D CRYSTAL PtSe2, J. Appl. Phys., 122, 205701 (2017) https://doi.org/10.1063/1.5000419 [34]Qiuru Wang, Wenxu Zhang*, Bin Peng, Huizhong Zeng, and Wanli Zhang, Spin to charge conversion at the conducting TiO2 surface, Phys. Status Solidi RRL,1700149 (2017), https://doi.org/10.1002/pssr.201700149 [33] Wenxu Zhang*, Qiuru Wang, Bin Peng, Huizhong Zeng, Wee Tee Soh, Chong Kim Ong, and Wanli Zhang, Spin galvanic effect at the conducting SrTiO3 surfaces, Appl. Phys. Lett. . 109, 262402 (2016); doi: 10.1063/1.4973479 [32] Wenxu Zhang*, Ting Wu, Bin Peng, Wanli Zhang, Resistivity dependence of the spin mixing conductance and the anisotropic magnetoresistance in permalloy, Journal of Alloys and Compounds 696 (2017) 234-238; DOI:/10.1016/j.jallcom.2016.11.274 [31]Qiuru Wang, Wanli Zhang, Bin Peng, Wenxu Zhang*, Separation of inverse spin Hall effect and spin rectification effect by inverting spin injection direction in NiFe/Ta bilayers film, Solid State Communications, 245, 15-19(2016) [30]Zhishuo Huang, Wenxu Zhang * and Wanli Zhang, Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature, Materials , 9, 716 (2016); doi:10.3390/ma9090716 [29]Wenxu Zhang*, Bin Peng, Fangbin Han, Qiuru Wang, Wee Tee Soh, Chong Kim Ong, Wanli Zhang, SEPARATING INVERSE SPIN HALL VOLTAGE AND SPIN RECTIFICATION VOLTAGE BY INVERTING SPIN INJECTION DIRECTION, Appl. Phys. Lett. 108, 102405 (2016) [28]Qiuru Wang, Wanli Zhang, Wenxu Zhang* and Huizhong Zeng, Insulator to metal transition in SrTiO3 single crystal by Ar+ irradiation, App. Surf. Sci. 365, 84-87 (2016) (doi:10.1016/j.apsusc.2015.12.219) [27] 韩方彬, 张文旭*, 彭斌, 张万里, NiFe/Pt薄膜中角度相关的逆自旋霍尔效应, 物理学报 64, (2015), 247202 [26]Wenxu Zhang*, Wanli Zhang, Collapse of the magnetic moment under pressure of AFe2 (A=Y,Zr,Lu and Hf)in the cubic Laves phase, J. MAGN. MAGN. MATER. , 404, (2016), 83–90 (doi:10.1016/j.jmmm.2015.12.026) [25]Wenxu Zhang*, Wanli Zhang, Prediction of magnetic moment collapse in ZrFe2 under hydrostatic pressure, J. Appl. Phys. 117 (2015) , 163917 (DOI: 10.1063/1.4919424) [24]Wenxu Zhang*, Tao Yu, Zhishuo Huang, Wanli Zhang, Band Jahn-Teller Effects in Rh2TMSn Full Heusler Compounds, J. Alloy and Compounds, 618, (2015) 78–83, (DOI: 10.1016/j.jallcom.2014.08.146) [23]Wenxu Zhang, Zhishuo Huang, Wanli Zhang, and Yanrong Li, Two-dimensional semiconductors with possible high room temperature mobility, Nano Research, 7, (2014) 1731-1737 (DOI: 10.1007/s12274-014-0532-x) [22]Wanli Zhang, Wenxu Zhang*, Zhengxin Lu, Fang Li, Bin Peng, Growth of highly textured barium ferrite thin films on sapphire and their magnetic properties, Thin Solid Films, 526,(2012)237 (DOI: 10.1016/j.tsf.2012.11.002) [21]Shengqiang Zhou*, Wenxu Zhang, Artem Shalimov, Yutian Wang, Zhisuo Huang, Danilo Buerger, Wanli Zhang, Heidemarie Schmidt and Manfred Helm,Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation,Nanoscale Research Letters, 7, (2012) 528 (DOI: 10.1186/1556-276X-7-528) [20]Wenxu Zhang*, Zhida Song, Bin Peng, and Wanli Zhang, Electronic structure and magnetism in M(=IA, IIA)C compounds with the rocksalt structure, J. Applied Physics, 112, (2012) 043905 (http://dx.doi.org/10.1063/1.4746785) [19]Li Fang, Wanli Zhang, Bin Peng, Wenxu Zhang*, Effects of EDTA on the Texture and Magnetic Properties of Barium Ferrite Films, J. ELECTRONIC MATERIALS, 41, (2012)2232 [18]Wenxu Zhang*, Fang Li, Hao Tang, Bin Peng, Wanli Zhang, Morphology control of barium ferrite thin films, Vacuum, 86(2012)946

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