翟亚红 - 电子科技大学 - 电子科学与工程学院

个人简介

1980年出生于山西省运城市，2005年在电子科技大学获硕士学位后留校工作，2013年获电子科技大学博士学位，2014年9月至2015年9月在美国Stanford大学电子工程系作为博士后/访问学者身份，进行基于密度泛函分析法（DFT)的新型存储器的研究。教育背景： 2007.09－2013.06 电子科技大学，微电子学与固体电子学专业，博士学位 2002.09－2005.06 电子科技大学，微电子学与固体电子学专业，硕士学位 1998.09－2002.07 电子科技大学，材料与元器件专业，学士学位工作履历： 2014.09 - 2015.09 斯坦福大学，电子工程专业，博士后/访问学者 2015.08－至今电子科技大学，任副教授职务 2009.01－2015.08 电子科技大学，任讲师职务 2005.06－2009.01 电子科技大学，任助教职务

研究领域

新型微纳电子器件与集成系统技术，包括新型存储器，低功耗器件及集成系统等。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

【1】 Y. H. Zhai, P. Li, G. J. Zhang, et al. Radiation-resistant bipolar n-p-n transistor [J]. Acta Physica Sinica, 2011, 60(8): 088501-1~088501-5 【2】 Y. H. Zhai, W. Li, P. Li, et al. Fabrication and characteristics of a lateral double-diffused metal/ferroelectric/silicon dioxide/silicon field effect transistor [J]. Chinese Physics B, 2013,22(7) 【3】 Y. H. Zhai, P. Li, W. Li, et al. Total-Dose hardened of a Bipolar NPN differential pair[C]. International Symposium on Photoelectronic Detection and Imaging, Beijing, 2011, 8196-81961B 【4】 Y. H. Zhai, W. Li, P. Li, et al. NV-DICE: A Ferroelectric Nonvolatile DICE Storage Element for Tolerance to Single Event Upsets[C]. International Conference on Intelligent Systems Design and Engineering Applications, SanYa, 2012, 1281-1284 【5】J. H. Li , P. Li, W. R. Huo, G. J. Zhang , Y. H. Zhai, X. B. Chen. Analysis and fabrication of an LDMOS with high-permittivity dielectric [J]. Electron Device Letters, 2011, 32(9): 1266~1268 【6】D. L. Cai, P. Li, S. R. Zhang, Y. H. Zhai. et al. Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor [J]. Applied Physics Letters, 2007, 90: 153513 【7】D. L. Cai, P. Li, Y. H. Zhai, et al. Pb(Zr0.52Ti0.48)O3 memory capacitor on Si with a polycrystalline silicon/SiO2 stacked buffer layer. Journal of Semiconductors, 2011, Vol.32(9): 094007-1~094007-4. 【8】D. L. Cai, P. Li. Y. H. Zhai, et al. Fabrication and electrical characteristics of a metal-ferroelectric-polysilicon-insulator-Si field effect transistor [J]. Integrated Ferroelectrics, 2008, 98(1): 46-52 【9】A. W. Ruan, B. Hu, Y. H. Zhai. A Parasitic Effect - Free Test Scheme for Ferroelectric Random Access Memory (FRAM)[C]. IEEE Circuits and Systems International Conference on Testing and Diagnosis, 2009, 1 – 4 【10】Y. H. Zhai, P. Li, S. R. Zhang, et al. Investigation of Compatibil ity of Ferroelectric Capacitor Fabrication Process with Standard CMOS Fabrication Process [J]. Piezoelectrics & Acoustooptics, 2007, 29(5): 609-611 【11】Y. H. Zhai, W. Li, P. Li, et al. Research Progress of Radiation Hardened Ferroelectric Random Access Memory [J]. Materials Review, 2012, 26(12): 34-38 【12】D. L. Cai, P. Li, Y. H. Zhai, et al. Fabrication and electrical characteristics of a metal-ferroelectric-polysilicon-insulator-Si field effect transistor[C]. International Symposium on Integrated Ferroelectric, 2007, Bordeaux, 27-29 【13】J. H. Li , P. Li, G. J. Zhang , Y. H. Zhai, et al. The Studies of a Bipolar PWM Push-Pull Converter for Anti-Radiation Application [J]. Acta Electronica Sinica, 2011, 39(11): 2492-249 【14】X. Fan, W. Li, P. Li, B. Zhang, X. D. Xie, G. Wang, B. Hu, Y. H. Zhai. Total ionizing dose effects on n-channel metal oxide semiconductor transistors with annular-gate and ring-gate layouts [J]. Acta Physica Sinica，2012, 61(1): 016106-1-016106-6 【15】X. Fan, P. Li, W. Li, B. Zhang, X. D. Xie, G. Wang, B. Hu, Y. H. Zhai, et al. Gate-enclosed NMOS transistors [J]. Journal of Semiconductors, 2011, 32(8): 084002-1~084002-6 【16】B. Hu, A. W. Ruan, P. Li, Y. H. Zhai, et al. Multilevel Silicate Interconnect in Monolithic Microsensors [J]. Journal of Shanghai Jiaotong University, 2007, 41 : 36-40 【17】Y. Zhang, C. T. Yang, Y. H. Zhai, et al. PZT Study on Deep Reactive Ion Etching of PZT Thin Film [J]. Piezoelectrics & Acoustooptics, 2011, 33(1): 133-135 【18】C. H. Bi, Y. X. Luo, B. Hu, Y. H. Zhai, et al. Research of the Ferroelectric Capacitor Performance Based on HSIM [J]. Piezoelectrics & Acoustooptics, 2012, 34(8): 614-617 【19】J. H. Feng, Y. H. Zhai, C. T. Yang, et al. Micromagnetic Simulation of the effects of the Stress on FeCoSiB Film[J]. Piezoelectrics & Acoustooptics, 2013, 35(1): 129-131