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[40] Jiangfeng Du*, Zhenchao Li, Dong Liu, Zhiyuan Bai, Yang Liu, Qi Yu. "Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications", Superlattices and Microstructures, 111:302-309 (2017) . (SCI) [39] Zhiyuan Bai, Jiangfeng Du*, Yong Liu, Qi Xin, Yang Liu, Qi Yu. "Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation", Solid-State Electronics, 133 : 31–37 (2017) .(SCI) [38] Jiangfeng Du*, Dong Liu, Yong Liu, Zhiyuan Bai, Zhiguang Jiang, Yang Liu, Qi Yu, "Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications", Superlattices and Microstructures, 111:656-664 (2017) . (SCI) [37] Jiangfeng Du*, Ruonan Li, Zhiyuan Bai, Yong Liu, Qi Yu. "High breakdown voltage GaN-on-insulator based heterojunction field effect transistor with a partial back barrier layer" , Superlattices and Microstructures, 111:760-766 (2017) . (SCI) [36] Zhiyuan Bai, Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination", Superlattices and Microstructures, 111:1000-1009 (2017) . (SCI) [35] Jiangfeng Du, Kang Wang, Yong Liu, Zhiyuan Bai, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. "Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs", Solid-State Electronics, 129:1-5, (2017) (SCI) [34] Yong Liu, Jing Ting Luo, Chao Zhao, Jian Zhou, Sameer Ahmad Hasan, Yifan Li, Michael Cooke,Qiang Wu, Wai Pang Ng, Jiangfeng Du, Qi Yu, Yang Liu, and Yong Qing Fu. "Annealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foil", IEEE Trans. on Elecron Devices, 63(11):4535-4541,(2016) (SCI) [33] Jiangfeng Du, Zehong Hou, Peilin Pan, Zhiyuan Bai, Qi Yu. "Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application", Micro & Nano Letters. Vol. 11, Iss. 9, pp. 503-507, (2016) (SCI) [32] Jiangfeng Du, Dong Liu, Zhiyuan Bai, Nanting Chen, and Qi Yu. "Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer", J. Comput. Electron., 15: 1334-1339, (2016) (SCI) [31] Jiangfeng Du, Dong Liu, Zhiyuan Bai, Qian Luo, and Qi Yu. "Design and simulation of high-breakdown-voltage GaN-based vertical field-effect transistor with interfacial charge engineering", Japanese Journal of Applied Physics, 55, 054301. (2016) (SCI) [30] Jiangfeng Du, Nanting Chen, Zhiguang Jiang , Zhiyuan Bai, Yong Liu, Yang Liu, Qi Yu. "Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate", Solid-State Electronics, 115, A, 60-64 (2016). (SCI) [29] Yong Liu, Yifan Li, Ahmed. M. el-Hady, C. Zhao, Jiangfeng Du, Yang Liu, Y.Q. Fu. "Flexible and bendable acoustofluidics based on ZnO film coated aluminium foil", Sensors and Actuators B, 221:230-235 (2015) (SCI) [28] Jiangfeng Du, Dong Liu, Zhiyuan Bai, Yong Liu and Qi Yu. "Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications", Superlattices and Microstructures, 85:690-696 (2015) . (SCI) [27] Jiangfeng Du, Dong Liu, Ziqi Zhao, Zhiyuan Bai, Liang Li, Jianghui Mo and Qi Yu. "Design of High Breakdown Voltage GaN Vertical HFETs with p-GaN Buried Buffer Layers for Power Switching Applications", Superlattices and Microstructures, 83: 251-260 (2015). (SCI) [26] Jiangfeng Du, Nanting Chen, Peilin Pan, et al. "High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation", Electronics Letters, 51(1):104-106 (2015). (SCI) [25] Du Jiangfeng, Xu Peng, Wang Kang, et al. "Small Signal Modeling of AlGaN/GaN HEMTs with Consideration of CPW Capacitances", Journal of Semiconductors, 36(3):034009-1, (2015). [24] Jiangfeng Du, Yong Liu, Jianghui Mo, Ziqi Zhao, Sini Huang, YangLiu, and Qi Yu. "Design and Simulation of a Nanoscale GaN-Based Vertical HFET with pnp-Superjunction Buffer Structure", Nanoscience and Nanotechnology Letters, 7(2):100-104,(2015). (SCI) [23] Jiangfeng Du, Hui Yan, Chenggong Yin, Zhihong Feng, Shaobo Dun, and Qi Yu."Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model", Journal of Applied Physics, 115, 164510 (2014). (SCI) [22] Jiangfeng Du, ZhiYuan Bai, Kunhua Ma, and Qi Yu."Influence of Trap State Effects on Buffer Leakage Current and Breakdown Voltage in Nano-Channel AlGaN/GaN DHFETs", Nanoscience and Nanotechnology Letters, 6, 794-797 (2014). (SCI) [21] Jiangfeng Du, Peilin Pan, Hui Yan, and Qi Yu. "Design Optimization of Nanoscale AlGaN/GaN HEMTs with Composite Metal Gate Structure for Millimeter-Wave Application", Nanoscience and Nanotechnology Letters, 6, 830-834 (2014). (SCI)
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