庄乾东 - 电子科技大学 - 基础与前沿研究院

个人简介

教育背景 1999 半导体研究所中国科学院博士工作经历 2003-今兰卡斯特大学副教授 2001-2003 格拉斯哥大学博士后 1999-2001 南洋理工大学研究员

研究领域

半导体材料、分子束外延、量子结构材料、光电子器件

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

[1] InSb-based quantum dot nanostructures for mid-infrared photonic devices Carrington, P.J., Repiso Menendez, E., Lu, Q., Fujita, H., Marshall, A.R.J., Zhuang, Q., Krier, A. 16/09/2016 In: Proceedings of SPIE. 9919 [2] Atomic-column scanning transmission electron microscopy analysis of misfit dislocations in GaSb/GaAs quantum dots [3] Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., Molina, S.I. 08/2016 In: Journal of Materials Science. 51, 16, p. 7691-7698. 8 p. [4] Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots Fernández-Delgado, N., Herrera, M., Chisholm, M.F., Ahmad Kamarudin, M., Zhuang, Q., Hayne, M., Molina, S.I. 22/04/2016 In: Applied Surface Science. [5] The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys Latkowska, M., Baranowski, M., Linhart, W.M., Janiaka, F., Misiewicz, J., Segercrantz, N., Tuomisto, F., Zhuang, Q., Krier, A., Kudrawiec, R. 11/02/2016 In: Journal of Physics D: Applied Physics. 49, 11, 7 p. [6] GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells Hodgson, P., Hayne, M., Robson, A., Zhuang, Q., Danos, E. 28/01/2016 In: Journal of Applied Physics. 119, 4, 7 p.