巫江 - 电子科技大学 - 基础与前沿研究院

个人简介

教育背景 2008.08-2011.12美国阿肯色大学电子电气工程博士 2006.08-2008.08美国阿肯色大学电子电气工程硕士 2004.09-2006.06电子科技大学英语（双学士） 2002.09-2006.06电子科技大学电子科学与技术（微电子学）学士工作经历 2018.03-今电子科技大学教授 2015.10-2018.02英国伦敦大学学院讲师/助理教授 2012.12-2015.08英国伦敦大学学院博士后 2013.01-2015.11电子科技大学研究员 2011.12-2012.12电子科技大学副教授

研究领域

光电子器件与技术，光子学，半导体科学与信息器件，信息功能材料

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. Jian Huang, Daqian Guo, Zhuo Deng, Wei Chen, Tinghui Wu, Huiyun Liu, Jiang Wu*, Baile Chen, “Mid-infrared sub-monolayer quantum dot quantum cascade photodetector monolithically grown on silicon substrate,” Journal of Lightwave Technology, 36, 4033, 2018. 2. Daqian Guo, Qi Jiang, Mingchu Tang, Siming Chen, Yuriy I. Mazur, Y. Maidaniuk, Mourad Benamara, Mykhaylo P. Semtsiv, William. T. Masselink, Gregory J. Salamo, Huiyun Liu, Jiang Wu*, “Two-color In0.5Ga0.5As quantum dot infrared photodetectors on silicon,” Semiconductor Science and Technology, 33, 094009, 2018. 3. Zhuo Deng, Baile Chen, Xiren Chen, Jun Shao, Qian Gong, Huiyun Liu, and Jiang Wu*, “Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate,” Infrared Physics & Technology 90, 115–121, 2018. 4.Wei Chen, Zhuo Deng, Daqian Guo, Yaojiang Chen, Yuriy I. Mazur, Yurii Maidaniuk, Gregory J. Salamo, Huiyun Liu, Jiang Wu*, Baile Chen, “Demonstration of InAs/InGaAs/GaAs quantum dots-in-a-well mid-wave infrared photodetectors grown on silicon substrate,” Journal of Lightwave Technology, 36, 2572 – 2581, 2017 5. Hao Xu, Xiaoyu Han, Xiao Dai, Wei Liu, Jiang Wu*, Juntong Zhu, Dongyoung Kim, Guifu Zou, Kimberley A. Sablon, Andrei Sergeev, Zhengxiao Guo, Huiyun Liu, “High Detectivity and Transparent Few-layer MoS2/Glassy-Graphene Heterostructure Photodetectors,” Advanced Materials, vol. 30, 1706561, 2018. 6. Claudia Gonzalez Burguete, Daqian Guo, Pamela Jurczak, Fan Cui, Mingchu Tang, Wei Chen, Zhuo Deng, Yaojiang Chen, Marina Gutiérrez, Baile Chen, Huiyun Liu, Jiang Wu*, “Direct growth of InAs/GaSb type II superlattice photodiodes on silicon substrates,” IET Optoelectronics, vol. 12, 2 – 4, 2018. 7. Pamela Jurczak, Kimberly A. Sablon, Marina Gutiérrez, Huiyun Liu, and Jiang Wu*, “2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique,” Infrared Physics and Technology, 81, 320-324, 2017. 8. Siming Chen, Wei Li, Jiang Wu, Qi Jiang, Mingchu Tang, Samuel Shutts, Stella Elliott, Angela Sobiesierski, Alwyn Seeds, Ian Ross, Peter Smowton, Huiyun Liu, “Electrically-pumped continuous-wave III-V quantum-dot lasers on silicon,” Nature Photonics, 10, 307–311, 2016. 9. Jiang Wu, P. Yu, A.S. Susha, K.A. Sablon, H. Chen, Z. Zhou, H. Li, H. Ji, X. Niu, A.L. Rogach, A.O. Govorov, Z.M. Wang, “Broadband Efficiency Enhancement in Quantum Dot Solar Cells with Multispiked Plasmonic Nanostars,” Nano Energy, 13, 827–835, 2015. 10.Jiang Wu, D. Shao, V.G. Dorogan, Z. Li, Z.M. Wang, O. Manasreh, Y.I. Mazur, G.J. Salamo, “Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High Temperature Droplet Epitaxy,” Nano Lett., vol. 10, pp 1512–1516, 2010.