个人简介
博士，教授，博士生导师，北京航空航天大学物理学院副院长，美国Stanford大学访问学者，2008年度教育部新世纪优秀人才。分别在香港中文大学，香港城市大学，美国斯坦福大学从事研究工作。2007年3月到北京航空航天大学物理学院工作，现主要从事类脑智能器件及固态电子等方面的研究。到目前为止，已发表SCI检索学术论文60余篇，分别在Applied Physics Letters、Optical letters、IEEE Electron device letters、Journal of Applied physics等学术期刊上。作为项目负责人，主持承担脑科学研究专项、多项国家自然科学基金项目、教育部新世纪人才计划等科研项目。
教育背景
兰州大学物理系电子材料与元器件专业本科；北京工业大学材料学院材料物理与化学专业博士；香港城市大学应用物理系博士后
工作经历
香港中文大学电子工程系、美国斯坦福大学访问学者；2007年至今在北京航空航天大学物理学院工作
奖励与荣誉
荣获北京市优秀教师，教育部新世纪优秀人才，第十届“我爱我师”十佳教师，优秀班主任一等奖，校优秀研究生指导教师等
近期论文
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X. Zhang,A. P. Huang,Q. Hu, Z. Xiao, P.K. Chu, Neuromorphic Computing with Memristor Crossbar, Phys.Status Solidi A-Appl. Mat. 215 (2018) 1700875.
Y. Xin,A. P. Huang,Q. Hu, H. Shi, M. Wang, Z. Xiao, X. Zheng, Z. Di, P.K. Chu, Barrier Reductionof Lithium Ion Tunneling through Graphene with Hybrid Defects: First‐PrinciplesCalculations, Adv. Theor. Simul. 1 (2018) 201870004.
A. P. Huang, X. Zhang, Y. Li, M. Wang, Z. Xiao, Fermi-levelpinning in full metal/high-k/SiO2/Si stacks, J. Appl. Phys. 122 (2017) 195702.
X. H. Zheng, M. Zhang,A. P. Huang, Z. S. Xiao,P. K. Chu, X. Wang, Z. F. Di,Pattern transitionfrom nanohoneycomb to nanograss on germanium by gallium ion bombardment,Chin. Phys. B24(2015) 460.
X. D. Yang,M. Chu,A. P. Huang,andS. Thompson, Effects of mechanical-bending and process induced stresseson metal effective work function,Solid State Electron.79 (2013) 142;
A. P. Huang*, X. H. Zheng, Z. S. Xiao, M. Wang, and Paul K. Chu,Interface Dipole Engineering in Metal Gate /High-kStacks,Chin. Sci. Bull. 57(2012) 2872.
X. H. Zheng,A. P. Huang*, Z. S. Xiao,X. Y. Liu, M. Wang, Z. W. Wu, and Paul K. Chu, Diffusion Behavior of DualCapping Layers in TiN/LaN/AlN/HfSiOx/Si Stack,Appl. Phys. Lett.99(2011) 131914.
A. P. Huang*, X. H. Zheng, Z. S. Xiao, Z. C. Yang, M. Wang, and Paul K. Chu,Flat Band Voltage Shift in P-Channel Metal Oxide Semiconductor Field EffectTransistors,Chin. Phys. B20(2011) 097303.
Z. C. Yang,A. P. Huang*, X. H. Zheng,Z. S. Xiao, X. Y. Liu, X. W. Zhang, Paul K. Chu and W. W. Wang, Fermi-level pinningat metal/high-k interface influenced by electron state density of metal gate,IEEEElectron. Dev. Lett.31 (2010) 1101.
X. H. Zheng,A. P. Huang*, Z. S.Xiao, Z. C. Yang, M. Wang, X. W. Zhang, W. W. Wang and Paul K. Chu, Origin of flat-bandvoltage sharp roll-off in metal gate/high-k/ultrathin SiO2/Si pMOS stacks,Appl. Phys. Lett.97 (2010) 132908.
A. P. Huang*, Z. C. Yang and Paul K. Chu, Hafnium-based high-k gate dielectrics:Advances in Solid State Circuit Tech nologies,Book ChapterISBN:978-953-307-086-5 (2010) p333-p350.
Z. C. Yang,A. P. Huang*, L. Yan,Z. S. Xiao, X. W. Zhang, Paul K. Chu and W. W. Wang, Role of interface dipolein metal gate/high-keffective work function modulation by aluminumincorporation,Appl. Phys. Lett.94 (2009) 252905.
A. P. Huang*, X. Y. Liu and P. K. Chu, Surface modification of Si-basedmaterials by plasma gas treatments,Book ChapterISBN:978-81-308-0285-5 (2009) p335-p387.
A. P. Huang*, Z. S. Xiao, X. Y. Liu, L. Wang and P. K. Chu, Role of fluorine inplasma nitridated ZrO2thin films under irradiation,Appl.Phys. Lett.93 (2008) 122907.
A. P. Huangand P. K. Chu, Interfacial compound suppression and dielectric propertiesenhancement of F-N-codoped ZrO2thin films,Appl. Phys. Lett.90 (2007) 082906.
A. P. Huang, L. Wang, J. B. Xu and P. K. Chu, Plasma nitridated high-kpolycrystallinearray induced by electron irradiation,Nanotech.17(2006)4379.
A. P. Huang, P. K. Chu and X. L. Wu, Enhanced electron field emission fromoriented columnar AlN and mechanism,Appl. Phys. Lett.88 (2006) 251103.
A. P. Huang, P. K. Chu，L. Wang, W. Y. Cheung, J. B. Xu and S. P. Wong, Fabrication of rutileTiO2thin films by low-temperature, bias-assisted cathodic arc depositionand their dielectric properties,J. Mater. Res.21(2006) 844.
A. P. Huang, and Paul K. Chu, Improvement of Interfacial and DielectricProperties of Sputtered Ta2O5Thin Films by SubstrateBias Assistance and the Underlying Mechanism,J. Appl. Phys.97 (2005)114106.
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