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个人简介

教育背景 State Doctorate Defects in semiconductors, Strasbourg University, France (1997) Ph.D. Semiconductor physics (1982) M.E. Energy conversion, Strasbourg University, France (1979) B.E. Physics, Strasbourg University, France (1978) 工作经历 2016-pres. Invited Professor every fall at UM-SJTU Joint Institute, Shanghai, China 2009-2012 Invited Professor at Muscat University, Sultanate of Oman 2004-2005 Invited Professor at Aarhus University, Denmark 1997–pres. Director of research, CNRS, France 1995 Visiting scientist at Caltech (California Institute of Technology) 1989 – 1997 Researcher First class at CNRS, France 1984 – 1989 Researcher Second class at CNRS, France 1982 – 1984 Associate researcher, CNRS (National Center for Scientific Research), Physics and Application of Semiconductors

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D. Hamri, A. Teffahi, A. Djeghlouf, A. Saidane, A. Mesli, Temperature dependent transport characterization of iron on n−type (111) Si(0.65)Ge(0.35) Schottky diodes, , Journal of Alloys and Compounds 763 (2018) 173−179 Yaping Dan, Xingyan Zhao, Kaixiang Chen and Abdelmadjid Mesli, A Photoconductor Intrinsically Has No Gain, , ACS Photonics 2018, 5 (10), 4111−4116. Kaixiang Chen, Xiaolong Zhao, Abdelmadjid Mesli, Yongning He and Yaping Dan, Dynamics of charge carriers in silicon nanowire photoconductors revealed by photo Hall effect measurements, , ACS Nano 12 (2018) 3436−3441 Xuejiao Gao, Bin Guan, Abdelmadjid Mesli, Kaixiang Chen & Yaping Dan, Deep level transient spectroscopic investigation of phosphorus−doped silicon by self−assembled molecular monolayers, , Nature communication, 9, (2018) 118 M. A.H. Khalafalla, A. Mesli, H. M. Widattallah, A. Sellai, S. Al-Harthi, Haider A. J. Al-Lawatiand F. O. Suliman, Size-dependent conductivity dispersion of gold nanoparticle colloids in a microchip: contactless measurements, J. Nanoparticle Research 16, 2546 (2014) M. Aziz, P. Ferrandis, A. Mesli, R. H. Mari, J. F. Felix, A. Sellai, D. Jameel, N. Al Saqri, A. Khatab, D. Taylor and M. Henini, Deep-Level Transient Spectroscopy of Interfacial States in “Buffer-Free” p-i-n GaSb/GaAs, Device, J. of Appl. Phys., 114, 134507 (2013) S. H. Al-Harthi,K. P. Revathy, F. Gard,A. Mesli, A. K. George,J. Bartringer, M. Mamor,N. V. Unnikrishnan, Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces, Nanoscale Res. Lett.,5, 1737 (2010) M. Christian Petersen,(1) A. Nylandsted Larsen(1) and A. Mesli, Divacancy defects in germanium studied using deep-level transient spectroscopy, Phys. Rev. B82, 075203 (2010) A. Mesli, L. Dobaczewski, K.Bonde Nielsen, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted Larsen, Low-temperature irradiation-induced defects in germanium: In-situ analysis, Phys. Rev. B78, 165202 (2008) Bin Guan, Hamidreza Siampour, Zhao Fan,, Shun Wang, Xiangyang Kong, Abdelmadjid Mesli , Jian Zhang, Yaping Dan, Nanoscale Nitrogen Doping in Silicon by Self-Assembled Monolayers, Under revision for Scientific Report, 5, 12641, (2015)

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