张睿 - 浙江大学 - 信息与电子工程学院

个人简介

近年来在国际会议和期刊上发表论文100余篇，多次受邀在集成电路技术领域的国际会议中做邀请报告，申请专利8项（其中日本专利1项）。研究成果被《日本产业经济》等主流媒体报道，并被授予2013年度国际电子电气工程师协会（IEEE）Paul Rappaport奖（排名第1）、2013年北京市科学技术三等奖（排名第4）等。曾主持多项科研项目（日本学术振兴会特别研究项目、国家自然科学基金青年项目等），作为主要成员参加国家重大专项，2017年获浙江省自然科学基金杰出青年基金项目资助。

研究领域

长期从事新型集成电路技术领域的研究，尤其是基于Ge、III-V半导体材料的新型集成电路技术。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

(1) Rui Zhang ; Junkang Li; Xiao Yu, Electrical properties of Ge pMOSFETs with ultrathin EOT HfO2/AlOx/GeOx gate-stacks and NiGe metal source/drain, IEEE Transactions on Electron Devices, 2017.12.1, 64(12): 4831~4837. (2) Rui Zhang ; Junkang Li; Zejie Zheng; Xiao Yu; Wenfeng Dong; Yi Zhao, Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) p- and n-MOSFETs, IEEE International Electron Device Meeting (IEDM), san francisco, 2016.12.3-2016.12.7. (3) Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Physical Origins of High Normal Field Mobility Degradation in Ge p- and n-MOSFETs With GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation, IEEE Transactions on Electron Devices, 2014.7, 61(7): 2316~2323. (4) Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation, IEEE Transactions on Electron Devices, 2013.3, 60(3): 927~934. (5) Rui Zhang; Winston Chern; Xiao Yu; Mitsuru Takenaka; Jody L Hoyt; Shinichi Takagi, High Mobility Strained-Ge pMOSFETs with 0.7-nm Ultrathin EOT using Plasma Post Oxidation HfO2/Al2O3/GeOx Gate Stacks and Strain Modulation, IEEE International Electron Device Meeting (IEDM), 2013.12.9-2013. (6) Rui Zhang; Yi Wang; Junkang Li; Feng Chen; Yi Zhao, Reduction of junction leakage current in Sub-10 nm ultra-shallow NiGe/n-Ge Schottky junctions by dopant segregation, 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2017.7.29-2017.7.31. (7) Rui Zhang ; Xiaoyu Tang; Xiao Yu; Junkang Li; Yi Zhao, Aggressive EOT Scaling ofGe pMOSFETs With HfO2/AlOx/GeOx Gate-Stacks Fabricated by Ozone Postoxidation, IEEE Electron Device Letters, 2016.7.1, 37(7): 831~834. (8) Rui Zhang ; Junkang Li; Feng Chen; Yi Zhao, High-Performance Germanium pMOSFETs With NiGe Metal Source/Drain Fabricated by Microwave Annealing, IEEE Transactions on Electron Devices, 2016.5.24, 63(7): 2665~2670. (9) Junkang Li ; Ran Cheng; Chang Liu; Pengzhan Zhang; Jiwu Lu; Kunji Chen; Rui Zhang; Yi Zhao, High performance Geultra-shallow junctions fabricated by a novel formation technique featuringspin-on dopant and laser annealing for sub-10 nm technology applications, Microelectronic Engineering, 2017.1.25, 168: 1~4. (10) Ran Cheng; Xiao Yu; Bing Chen; Junfeng Li; Yiming Qu; Jinghui Han; Rui Zhang; Yi Zhao, Investigation of self-heating effect on ballistic transport characterization for Si FinFETs featureing ultrafast pulsed IV technique, IEEE Transactions on Electron Devices, 2017.3.1, 64(3): 909~915. (11) Rui Zhang ; Xiaoyu Tang; Xiao Yu; Junkang Li; Yi Zhao, Impact of Ozone Post Oxidation to the Electrical Properties of HfO2/Al2O3/GeOx/Ge pMOSFETs, International Conference on Solid State Devices and Materials (SSDM), Tsukuba, 2016.9.26-2016.9.29. (12) Takagi, S.; Noguchi, M.; Kim, M.; Kim, S. -H.; Chang, C. -Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M., III-V/Ge MOS device technologies for low power integrated systems, Solid-State Electronics, 2016.11, 125: 82~102. (13) S. Takagi; M. Takagi; M. Kim; SH. Kim; CY. Chang; M. Yokoyama; K. Nishi; R. Zhang; M. Ke; M. Takenaka, III-V/Ge MOS devicetechnologies for low power integrated systems, Solid-State Electronics, 2016.11.1, 125: 82~102. (14) Rui Zhang; Po-Chin Huang; Noriyuki Taoka; Masafumi Yokoyama; Mitsuru Takenaka; Shinichi Takagi, Low Temperature Formation of Higher-k Cubic Phase HfO2 by Atomic Layer Deposition on GeOx/Ge Structures Fabricated by In-Situ Thermal Oxidation, Applied Physics Letters, 2016.2, 108: 052903-1~4. (15) Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Impact of Postdeposition Annealing Ambient on the Mobility of Ge nMOSFETs with 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks, IEEE Transactions on Electron Devices, 2016.2, 63(2): 558~564. (16) Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETs, IEEE Transactions on Electron Devices, 2014.2, 61(2): 416~422. (17) Rui Zhang; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Impact of Channel Orientation on Electrical Properties of Ge p- andn-MOSFETs With 1-nm EOT Al2O3/GeOx/Ge Gate-Stacks Fabricated by Plasma Postoxidation, IEEE Transactions on Electron Devices, 2014.11, 61(11): 3668~3675. (18) Rui Zhang; Yi Zhao, Plasma Post-Oxidation of Ultrathin ALD High-k/Ge Structures for Advanced Gate Stacks in High Mobility Ge CMOS Devices, 2nd International Conference on ALD Applications & 3rd China ALD conference, 2014.10.16-2014.10.17. (19) Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Examination of Physical Origins Limiting Effective Mobility of GeMOSFETs and the Improvement by Atomic Deuterium Annealing, IEEE VLSI Symposia – Technology (VLSI), 2013.6.11-2013.6.13. (20) Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi, Impact of Plasma Post Oxidation Temperature on Interface Trap Densityand Roughness at GeOx/Ge Interfaces, 18th Conference on Insulating Films on Semiconductors, 2013.6.25-2013.6.28. (21) Rui Zhang; Ju-Chin Lin; Xiao Yu; Mitsuru Takenaka; Shinichi Takagi, Impact of Plasma Post Oxidation Temperature on Interface Trap Density and Roughness at GeOx/Ge Interfaces, Microelectronic Engineering, 2013.9, 109: 97~100. (22) Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi, Atomic Layer-by-Layer Oxidation of Ge (100) and (111) Surfaces by Plasma Post Oxidation of Al2O3/Ge Structures, Applied Physics Letters, 2013.2.25, 102: 081603-1~4. (23) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate StackFabricated by Plasma Post Oxidation, IEEE Transactions on Electron Devices, 2012.2, 59(2): 335~341. (24) Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi, Mechanism Determining Ge p- and n-MOSFETs Mobility in High Ns Region and Mobility Improvement by Atomically Flat GeOx/Ge Interfaces, IEEE International Electron Device Meetings (IEDM), 2012.12.10-2012.12.12. (25) Rui Zhang; Po-Chin Huang; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, High Mobility Ge pMOSFETs with 0.7 nm Ultrathin EOT using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation, IEEE VLSI Symposia – Technology (VLSI), 2012.6.12-2012.6.14. (26) Rui Zhang; Po-Chin Huang; Ju-Chin Lin; Mitsuru Takenaka; Shinichi Takagi, Evidence of Layer-by-Layer Oxidation of Ge Surfaces by Plasma Oxidation Through Al2O3, ECS Transactions, 2012.10, 50(9): 699~706. (27) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Al2O3/GeOx/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation, Applied Physics Letters, 2011.3, 98(11): 112902-1~3. (28) Rui Zhang; Noriyuki Taoka; Po-Chin Huang; Mitsuru Takenaka; Shinichi Takagi, 1-nm-thick EOT High Mobility Ge n- and p-MOSFETs with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation, IEEE International Electron Devices Meeting (IEDM), 2011.12.5-2011.12.7. (29) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Suppression of ALD-Induced Degradation of Ge MOS Interface Properties byLow Power Plasma Nitridation of GeO2, Journal of the Electrochemical Society, 2011.6, 158(8): G178~G184. (30) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS InterfaceProperties, 17th Conference of Insulating Films on Semiconductors, 2011.6.21-2011.6.24. (31) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, High Mobility Ge pMOSFETs with ~1 nm Thin EOT using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation, IEEE VLSI Symposia – Technology (VLSI), 2011.6.14-2011.6.16. (32) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Impact of GeOx Interfacial Layer Thickness on Al2O3/Ge MOS Interface Properties, Microelectronic Engineering, 2011.7, 88(7): 1533~1536. (33) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Suppression of ALD-Induced Degradation of Ge MOS Interface Properties by Low Power Plasma Nitridation of GeO2, 2010 International Conference on Solid State Device and Materials (SSDM), 2010.9.22-2010.9.24. (34) Rui Zhang; Takashi Iwasaki; Noriyuki Taoka; Mitsuru Takenaka; Shinichi Takagi, Thin EOT and Low Dit Al2O3/GeOx/Ge Gate Stacks Fabricated by Novel Post-Oxidation Method, IEEE Semiconductor Interface Specialists Conference (SISC), 2010.12.2-2010.12.4.