叶志 - 浙江大学 - 信息与电子工程学院

个人简介

2012年获香港科技大学电子及计算机工程学系微电子专业博士学位。2004年和2007年分别获湘潭大学测控技术与仪器专业学士和微电子与固体电子学硕士学位。2013年至今工作于浙江大学信息与电子工程学系微电子与光电子研究所。近年来，主持承担了多项国家级、省级自然科学基金以及重大横向项目，以第一作者或通讯作者在Applied Physics Letters、Journal of Applied Physics、IEEE Electron Device Letters、IEEE Transaction on Electron Devices等国际刊物上发表论文20余篇，已获授权1项美国专利和2项中国发明专利，另有7项中国发明专利在实质审查中，并在国际显示会议SID、国际微电子顶级会议IEDM上做口头报告。精通标准或非标准集成电路CMOS制造工艺，目前已开发和展示出最新型的透明电子原型，如透明射频标签，透明指纹识别屏。

研究领域

氧化锌基透明薄膜晶体管的物理及工艺，器件电路和物理建模，新型集成电路设计，玻璃/柔性基底感知和处理电路芯片及系统开发（包括透明显示屏，有源矩阵多点触摸屏开发，透明指纹识别屏开发，低成本RFID技术）。

近期论文

查看导师新发文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Journal: • Zhi Ye*, Hua Xu, Tengfei Liu, Ni Liu, Ying Wang, Ning Zhang, and Yang Liu, “Highly Stable Atomic Layer Deposited Zinc Oxide Thin Film Transistors Incorporating Triple O2 Annealing”, IEEE Transactions on Electron Devices, Vol. 64, no. 10, pp.4114-4122, 2017. • Zhi Ye*, Y. Yuan, H. Xu, Y. Liu, J. Luo, and M. Wong, 'Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory,' IEEE Transactions on Electron Devices, vol. 64, no. 2, pp. 438-446, Feb. 2017. • Hua Xu, Zhi Ye*, Ni Liu, Ying Wang, Ning Zhang and Yang Liu, “Low-Power Transparent RFID Circuits Using Enhancement/Depletion Logic Gates Based on Deuterium-Treated ZnO TFTs” IEEE Electron Device Letters, Vol. 38, no. 10, pp.1383-1386, 2017. • Zhi Ye*, Man Wong, Man-Tik Ng, Kin-Ho Chui, Chi-Keung Kong, Lei Lu, Tengfei Liu, and J. K. Luo, “High Precision Active-Matrix Self-Capacitive Touch Panel Based on Fluorinated ZnO Thin-Film Transistor,” IEEE Journal of Display Technology, vol. 11, pp.22-29, Jan. 2015. • Wenbo Wang, Patrick M. Mayrhofer, Xingli He, Manuel Gillinger, Zhi Ye*, Xiaozhi Wang, Achim Bittner, Ulrich Schmid, and J. K. Luo*, “High performance AlScN thin film based surface acoustic wave devices with large electromechanical coupling coefficient,” Appl. Phys. Lett., vol. 105, p. 133502, Sep. 2014. • Zhi Ye and Man Wong, “Investigation of Phosphorus and Arsenic as N-Type Dopants in Polycrystalline Zinc Oxide Thin Films,” J. Appl. Phys., vol. 113, no. 2, pp. 024506-6, Jan. 2013. • Zhi Ye and Man Wong, “Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors,” IEEE Electron Device Lett., vol. 33, no. 8, pp. 1147-1149, Aug. 2012. • Zhi Ye and Man Wong, “Characteristics of Thin-Film Tran sistors Fabricated on Fluorinated Zinc Oxide,” IEEE Electron Device Lett., vol. 33, no. 4, pp. 549-551, Apr. 2012. • Zhi Ye, Lei Lu, and Man Wong, “Zinc-oxide thin-film transistor with self-aligned source/drain regions doped with implanted boron for enhanced thermal stability,” IEEE Trans. on Electron Devices, vol. 59, no. 2, pp. 393-399, Feb. 2012. • Zhi Ye, Minghua Tang, Yichun Zhou, Xuejun Zheng, Chuanpin Cheng, Zengshun Hu, and H. P. Hu “Electri cal properties of V-doped Bi3.15Nd0.85Ti3O12 thin films with different contents,” Appl. Phys. Lett., vol. 90, no. 8, pp. 082905-3, Feb. 2007. • Zhi Ye, Minghua Tang, Yichun Zhou, Xuejun Zheng, Chuanpin Cheng, Zengshun Hu, and H. P. Hu “Modeling of imprint in hysteresis loop of ferroelectric thin films with top and botto m interface layers,” Appl. Phys. Lett., vol. 90, no. 4, pp. 042902-3, Jan. 2007. • Zhi Ye, Minghua Tang, Yichun Zhou, Xuejun Zheng, Chuanpin Cheng, and Zengshun Hu, “Simulation of polarization and butterfly hysteresis loops in bismuth layer-structured ferroelectric thin films,” J. Appl. Phys., vol. 100, no. 4, pp. 094101-5, Nov. 2006. • Zhi Ye, Minghua Tang, Yichun Zhou, Xuejun Zheng, Chuanpin Cheng, and Zengshun Hu, “Effect of annealing temperature on ferroelect ric properties of (Bi,Nd)4(Ti,V)3O12 thin films,” Trans. Nonferrous Met. Soc., vol. 16, no. 4, pp. s71-s74, Jun. 2006. Patent: • Man Wong, Hoi Sing KwoK and Zhi Ye, “Metal-oxide based thin-film transistors with fluorinated active layer and method of fabrication,” US Patent (No. 8878176B2), Nov. 2014. Conference: • Lingzi Guo, Xin Zhu, Xingye Zhang, Zhi Ye*, Yang Liu, “Numerical Simulations of Nonlinear Current-Voltage Characteristics of Nano-Channels,” accepted by 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2016). • Zhi Ye*, Man Wong, Man-Tik Ng, and J. K. Luo, 'High stability fluorinated zinc oxide thin film transistor and its application on high precision active-matrix touch panel,' in Electron Devices Meeting (IEDM), 2013 IEEE International, 2013, pp. 27.2.1-27.2.4. • Zhi Ye and Man Wong, “Improved Electrical Characteristics of Zinc Oxide Thin-Film with Fluorine Passivation,” in IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Xi’an, China, pp.1-4 , 2012. • Zhi Ye and Man Wong, “ZnO Thin-Film Tr ansistor with Boron-Implanted Source/Drain Regions,” in China Display/Asia Display, Kunshan, China, pp.21-24, 2011. • Zhi Ye and Man Wong, “Scaling Behavior of Self-Aligned Zinc Oxide Thin-Film Transistor,” in 10th International Meeting on Information Display (IMID), Seoul, Korea, 2010. • Zhi Ye and Man Wong, “Character istic of the Hysteresis on ZnO TFT with SiO2 Gate Oxide,” in 17th International Display Workshops (IDW), Fukuoka, Japan, pp.1825-1828, 2010. • Zhi Ye, Thomas Chow, Dongli Zhang, and Man Wong, “A simple technology for realizing self-aligned zinc oxide thin-film transistor,” in SID Tech. Dig., 2010, pp. 1139-1142.