郭耀 - 北京理工大学

个人简介

教育经历 2006-2010年北京科技大学材料科学与工程学院，学士 2010-2015年北京大学信息科学技术学院，博士工作经历助理教授，北京理工大学物理学院，中国，2017年-至今访问学者，斯坦福大学电子工程系，美国，2016-2017 研究助理，香港理工大学应用物理系，香港，2015-2016

研究领域

二维材料与电子器件

近期论文

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Y Guo; W. Zhang; H. Wu; J. Han; Y. Zhang; S. Lin; C. Liu; K. Xu; J. Qiao; W. Ji; Q. Chen; S. Gao; W. Zhang; X. Zhang and Y. Chai, Discovering the Forbidden Raman Modes at the Edges of Layered Materials, Science Advances , 2018.4,(12): 6252 Y. Guo, C. Liu, Q. Yin, C. Wei, S. Lin, T. Hoffman, Y. Zhao, J. H. Edgar, Q. Chen, S. P. Lau, J. Dai, H. Yao, H.-S. P. Wong, Y. Chai(*), Distinctive In-Plane Cleavage Behaviors of Two-Dimensional Layered Materials, ACS Nano, 10, 8980, (2016) ACS Editors’ Choice Y. Guo, Y. X. Han, J. P. Li, A. Xiang ,X. L. Wei, S. Gao, Q. Chen(*). Study on Contact Resistance Distribution at the Contact between Molybdenum Disulfide and Metals. ACS Nano, 8, 7771, (2014). Y. Guo, X. L. Wei, J. P. Shu, B. Liu; J. B. Yin; C. R. Guan, Y. X. Han, S. Gao, Q. Chen(*). Charge Trapping at the MoS2-SiO2 Interface and its Effects on the Characteristics of MoS2 Metal-Oxide-Semiconductor Field Effect Transistors. Appl. Phys. Lett., 106, 103109, (2015). Y. Guo(#), J. B. Yin(#), X. L. Wei, Z. J. Tan, J. P. Shu, B. Liu, Y. Zeng, S. Gao, H. L. Peng(*), Z. F. Liu(*), Q. Chen(*). Edge States Induced Severe Disruption to the Band Alignment of the Thickness Modulated molybdenum sulfide junctions. Advance Electronic Materials, 201600048, (2016) Q. Q. Ji, M. Kan, Y. Zhang, Y. Guo, D. L. Ma, J. P. Shi, Q. Sun, Q. Chen, Y. F. Zhang(*), Z. F. Liu(*). Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS2 Domains on Sapphire. Nano Lett., 15, 198, (2015). C. Y. Zhang, Z. Y. Ning, Y. Liu, T. T. Xu, Y. Guo, A. Zak, Z. Y. Zhang, W. Sheng, R. Tenne, Q. Chen(*). Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption. Appl. Phys. Lett., 101, 113112, (2012). Z. Y. Ning, T. W. Shi, M. Q. Fu, Y. Guo, X. L. Wei, S. Gao, Q. Chen(*). Transversally and Axially Tunable Carbon Nanotube Resonators in Situ Fabricated and Studied Inside a Scanning Electron Microscope. Nano Lett., 14, 1221, (2014). Z. Y. Ning, M. Q. Fu, T. W. Shi, Y. Guo, X. L. Wei, S. Gao, Q. Chen(*). In-situ Multi- properties Measurements of the Same Individual Nanomaterials in SEM and Correlation with Their Atomic Structure. Nanotechnology, 25, 275703, (2014). T. S. Shi, M. Q. Fu, D. Pan, Y. Guo, J. H. Zhao, Q. Chen(*). Contact Properties of Field- effect Transistors Based on Indium Arsenide Nanowires Thinner than 16 nm. Nanotechnology, 26, 175202, (2015). Y. X. Han, X. Zheng, M. Q. Fu, D. Pan, X. Li, Y. Guo, J. H. Zhao, Q. Chen(*). Negative photoconductivity of InAs nanowire. Phys. Chem. Chem. Phys., 18, 818-826, 2016. J. P. Shu, G. T. Wu, Y. Guo, B. Liu, X. L. Wei, Q. Chen(*). The Intrinsic Origin of the Hysteresis in the MoS2 Field Effect Transistors. Nanoscale, 8, 3049-3056, 2016. Y. Guo, Q. Chen. Study on the contact between MoS2 and metals, MRS Spring Meeting (presentation), San Francisco, California, US. Apr. 6~10, (2015).