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1. L .M Wang, X. M. Zou,* J. Lin, J. Y. Jiang, Y. Liu, X. Q. Liu, X. Zhao, Y. F. Liu,* J. C. Ho, and L. Liao* Perovskite/Black Phosphorus/MoS2 Photogate Reversed Photodiodes with Ultrahigh Light On/Off Ratio and Fast Response ACS Nano In press 2. B. Jiang, Z. Y. Yang, X. Q. Liu,* Y. Liu,* and L. Liao* Interface engineering for two-dimensional semiconductor transistors Nano Today 25, 122, (2019) 3. G. L. Li, A. Abliz, L. Xu, N. Andre, X. Q. Liu, Y. Zeng,* D. Flandre, and L. Liao* Understanding hydrogen and nitrogen doping on active defects in amorphous In-Ga-Zn-O thin film transistors Appl. Phys. Lett. 112, 253504, (2018) 4. X. Q. Liu, R. R. Liang, G. Y. Gao, C. F. Pan,* C. S. Jiang, Q. Xu, J. Luo, X. M. Zou, Z. Y. Yang, L. Liao,* Z. L. Wang* MoS2 Negative Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit Adv. Mater. 30, 1800932, (2018) 5. B. Jiang, J. Su, X. M. Zou, J. H. Liang, J. L. Wang, H. J. Liu, L. P. Feng, C. Z. Jiang, J. He,* L. Liao* Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field-Effect Transistors Adv. Funct. Mater. 28, 1801398, (2018) 6. Y. Liu, J. Guo, E. B. Zhu, L. Liao, S. J. Lee, M. N. Ding, I. Shakir, V. Gambin, Y. Huang,* X. F. Duan* Approaching the Schottky-Mott limit in van der Waals metal-semiconductor Junctions Nature 557, 696, (2018) 7. Z. Y. Yang, L. Liao,* F. Gong, F. Wang, Z. Wang, X. Q. Liu, X. H. Xiao, W. D. Hu, J. He,* X. F. Duan* WSe2/GeSe Heterojunction Photodiode with Giant Gate Tunability Nano Energy 49, 103, (2018) 8. A. Abliz, Q. G. Gao, D. Wan, X. Q. Liu, L. Xu, C. S. Liu*, C. Z. Jiang, X. F. Li, H. P. Chen, T. L. Guo, L. Liao* Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors ACS Applied Materials & Interface 9, 10798, (2017) 9. Z. Y. Yang, X. Q. Liu, X. M. Zou, J. L. Wang, C. Ma, C. Z. Jiang, J. C. Ho, C. F. Pan, X. H. Xiao*, J. Xiong*, L. Liao* Performance Limits of the Self-Aligned Nanowire Top-Gated MoS2 Transistors Adv. Funct. Mater. 27, 1602250, (2017) 10. J. L. Wang, Q. Yao, C. W. Huang, X. M. Zou, L. Liao*, S. S. Chen, Z. Y. Fan, K. Zhang, W. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu High Mobility MoS2 Transistors with Low Schottky Barrier Contact by using Atomic Thick h-BN as a Tunneling Layer Adv. Mater. 28, 8302, (2016). 11. X. M. Zou, C. W. Huang, L. F. Wang, L. J. Yin, W. Q. Li, J. L. Wang, B. Wu, Y. Q. Liu, Q. Yao, C. Z. Jiang, W. W. Wu, L. He, S. S. Chen, J. Ho, L. Liao* Dielectric Engineering of Boron Nitride/Hafnium Oxide Heterostructure for High-Performance Two-Dimensional Field Effect Transistors Adv. Mater. 28, 2062, (2016) 12. J. L. Wang, X. M. Zou, X. H. Xiao, L. Xu, C. L. Wang, C. Z. Jiang, J. C. Ho*, T. Wang, J. C. Li, L. Liao* Floating Gate Memory based Monolayer MoS2 Transistor with Metal Nanocrystals embedded in Gate Dielectrics. Small 11, 208, (2015) 13. X. Q. Liu, X. Liu, J. L. Wang, C. N. Liao, X. H. Xiao, S. S. Guo, C. Z. Jiang, Z. Y. Fan, T. Wang, X. S. Chen, W. Lu, W. D. Hu*, L. Liao* Transparent, High-Performance InGaZnO/Aligned-SnO2 Nanowires Composite Thin-Film Transistors and Their Application in Photodetectors. Adv. Mater. 26, 7399, (2014) 14. X. M. Zou, J. L. Wang, C. H. Chiu, Y. Wu, X. H. Xiao, C. Z. Jiang, W. W. Wu, L. Q. Mai, T. S. Chen, J. C. Li, J. C. Ho*, L. Liao*, Interface Engineering for High-Performance Top-Gated MoS2 Field Effect Transistors. Adv. Mater. 26, 6255, (2014) 15. X. M. Zou, J. L. Wang, X. Q. Liu, C. L. Wang, Y. Jiang, Y. Wang, X. H. Xiao, J. C. Ho*, J. C. Li, C. Z. Jiang, Y. Fang, L. Liao*, Rational Design of Sub-ppm Specific Gas Sensors Array based on Metal Nanoparticles Decorated Nanowire Enhancement-Mode Transistors Nano Lett. 13, 3287, (2013) 16. X. Q. Liu, C. L. Wang, B. Cai, X. H. Xiao, S. S. Guo, Z. Y. Fan*, J. C. Li, X. F. Duan, L. Liao*, Rational Design of Amorphous Indium Zinc Oxide/Carbon Nanotubes Hybrid Film for Unique Performance Transistor Nano Lett.12, 3596, (2012). 17. L. Liao, X. F. Duan Graphene Transistors for Radio Frequency Electronics Materials Today 15, 328, (2012). 18. L. Liao, J. W. Bai, R. Chen, H. L. Zhou, L. X. Liu, Y. Liu, Y. Huang, X. F. Duan, Scalable Fabrication of Self-Aligned Graphene Transistors and Circuits on Glass Nano Lett. 12, 2653, (2012). 19. L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K.. L. Wang, Y. Huang, X. F. Duan High speed graphene transistors with a self-aligned nanowire gate Nature 467, 305, (2010) 20. L. Liao, J. W. Bai, Y. Q. Qu, Y. C. Lin, Y. J. Li, Y. Huang, and X. F. Duan High-k Oxide Nanoribbons as Gate Dielectrics for High Mobility Top-gated Graphene Transistors PNAS107, 6711 (2010).
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