个人简介
Professional experience
Associate Professor of Experimental Physics University of Salerno Department of Physics May 2016 - Present
Education
Physics University of Salerno November 1993 - November 1996(3 years
研究领域
Research interests
Semiconductor memories
Photodetectors
FinFETs
Field effect transistors
Schottky junctions
Semiconductor devices
Carbon nanotubes
Graphene
2D Materials
近期论文
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A WSe 2 vertical field emission transistor Di Bartolomeo AUrban FPassacantando M et al. Nanoscale (2019) 11(4) 1538-1548
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS 2 Field-Effect Transistors Giubileo FIemmo LPassacantando MUrban FLuongo GSun LAmato GEnrico EDi Bartolomeo A The Journal of Physical Chemistry C (2019) 123(2) 1454-1461
Multi-walled carbon nanotube films for the measurement of the alcoholic concentration Giordano CFilatrella GSarno MDi Bartolomeo A Micro & Nano Letters (2019) 14(3) 304-308
Asymmetric Schottky Contacts in Bilayer MoS2Field Effect Transistors Di Bartolomeo A Grillo A Urban F Iemmo L Giubileo F Luongo G Amato G Croin L Sun L Liang S Ang L Advanced Functional Materials (2018)
Current modulation of a heterojunction structure by an ultra-thin graphene base electrode Chavarin C Strobel C Kitzmann J Di Bartolomeo A Lukosius M Albert M Bartha J Wenger C Materials (2018) 11(3)
Effect of temperature and morphology on the electrical properties of PET/conductive nanofillers composites Gorrasi G Bugatti V Milone C Mastronardo E Piperopoulos E Iemmo L Di Bartolomeo A Composites Part B: Engineering (2018) 135
Electronic properties of graphene/p-silicon Schottky junction Luongo G Di Bartolomeo A Giubileo F Chavarin C Wenger C Journal of Physics D: Applied Physics (2018) 51(25)
Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors Urban FMartucciello NPeters LMcEvoy NDi Bartolomeo A Nanomaterials (2018) 8(11) 901
Field emission from carbon nanostructures Giubileo F Di Bartolomeo A Iemmo L Luongo G Urban F Applied Sciences (Switzerland) (2018) 8(4)
Graphene–Silicon Schottky Diodes for Photodetection Di Bartolomeo ALuongo GIemmo LUrban FGiubileo F IEEE Transactions on Nanotechnology (2018) 17(6) 1133-1137
Hysteresis in the transfer characteristics of MoS2transistors Di Bartolomeo A Genovese L Giubileo F Iemmo L Luongo G Foller T Schleberger M 2D Materials (2018) 5(1)
Invited talk - Graphene/silicon schottky diodes for photodetection Di Bartolomeo A Luongo G Iemmo L Giubileo F Niu G Lupina G Schroeder T 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 (2018) 2018-Janua
Persistent Photoconductivity, Hysteresis and Field Emission in MoS2 Back-Gate Field-Effect Transistors Di Bartolomeo AIemmo LGiubileo FLuongo GUrban FGrillo A 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) (2018) 1-2
Probing unconventional pairing in LaO0.5F0.5BiS2layered superconductor by point contact spectroscopy Giubileo F Romeo F Di Bartolomeo A Mizuguchi Y Romano P Journal of Physics and Chemistry of Solids (2018) 118
Scattering Theory of Graphene Grain Boundaries Romeo FDi Bartolomeo A Materials (2018) 11(9) 1660
The role of the substrate in Graphene/Silicon photodiodes Luongo G Giubileo F Iemmo L Di Bartolomeo A Journal of Physics: Conference Series (2018) 956(1)
Transport and field emission properties of MoS2bilayers Urban F Passacantando M Giubileo F Iemmo L Di Bartolomeo A Nanomaterials (2018) 8(3)
A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study Liang S Hu W Di Bartolomeo A Adam S Ang L Technical Digest - International Electron Devices Meeting, IEDM (2017)
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors Di Bartolomeo A Genovese L Foller T Giubileo F Luongo G Croin L Liang S Ang L Schleberger M Nanotechnology (2017) 28(21)
Field emission from self-catalyzed gaas nanowires Giubileo F Di Bartolomeo A Iemmo L Luongo G Passacantando M Koivusalo E Hakkarainen T Guina M Nanomaterials (2017) 7(9)