金运姜 - 中山大学 - 电子与信息工程学院

个人简介

2017.12—至今中山大学电子与信息工程学院副教授 2012—2017新加坡科技局材料工程研究所(A*star, IMRE) 研究员 2008—2012新加坡南洋理工大学博士 2004—2007中国科学技术大学硕士

研究领域

新型半导体材料和器件纳米光子学和纳米电子学低维(纳米、二维)材料和器件新功能材料制备及应用

近期论文

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1. 1. H. F. Liu, Y. J. Jin, M. Lin, S. F. Guo, S. Tripathy and X. Z. Wang, Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures, J. Mater. Chem. C., 6 (2018) 13059. (Co-first author) 2. Y. J. Jin, J. J. Linghu, J. W. Chai, C. S. Chua, L. M. Wong, Y. P. Feng; M. Yang, S. J. Wang, Defect Evolution Enhanced Visible-Light Photocatalytic Activity in Nitrogen-Doped Anatase TiO2, The Journal of Physical Chemistry C, 2 (2018) 16600-16606. 3. H. F. Liu, J. J. Lee, Y. J. Jin, J. Yang, C. Y. Yang, D. Z. Chi, Huge Absorption Edge Blue shifts of Layered α-MoO3 Crystals upon Thickness Reduction Approaching 2D Nanosheets, The Journal of Physical Chemistry C, 122 (2018) 12122–12130. 4. Y. J. Jin, D. H. Zhang, C. Ke, X. H. Tang, Bandgap engineering of InSb by N incorporation by metal-organic chemical vapor deposition, Journal of Alloys and Compounds, 756 (2018) 134-138. 5. H. F. Liu, Y. J. Jin, MOCVD Ge-on-GaAs and Its p-Type Doping via Incorporating Ga Atoms, Procedia Engineering, Procedia Engineering, 2017 215: 17–23. (Equal contribution) 6. Y. J. Jin*, X. H. Tang, H. F. Liu, C. Ke, D. H. Zhang*, “Growth of one-dimensional InSb nanostructures with controlled orientations on InSb substrates by MOCVD", Journal of Alloys and Compounds, 721 (2017) 628-632. 7. Y. J. Jin*, D. H. Zhang, H. F. Liu, X. H. Tang*, “Self-nucleation growth of InSb nanowires based on indium droplets under the assistance of Au nano-particles by MOCVD”, Materials Letters, 185 (2016) 77-80. 8. Y. J. Jin*, D. H. Zhang*, X. H. Tang, J. H. Teng, “InSbN alloys Grown on GaSb by Metal-organic chemical vapor deposition for long wavelength detection”, Thin Solid Films, 616 (2016) 624-627. 9. Y. J. Jin, C. K. Chia, L. M. Wong, H. F. Liu, J. W. Chai, D. Z. Chi and S. J. Wang*, “P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD”, Applied Surface Science, 376 (2016) 236-240. 10. Y. J. Jin*, Z. Xu, S. F. Yoon, C. K. Chia, S. J. Wang and D. Z. Chi, “Switching characteristics of TaOx-based One Diode-One Resistor for Crossbar Memory Application”, Electronic Material Letter, 12 (2016) 365-370. 11. Y. F. Lao, A. G. Unil Perera, H. L. Wang, J. H. Zhao, Y. J. Jin and D. H. Zhang, "Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors", J. Appl. Phys., 119 (2016) 105304. 12. H. F. Liu, Y. J. Jin, C. Y. Yang, “Droplets induced dot, dot-in-hole, and hole structures in GaGe thin films grown by MOCVD on GaAs substrates”, CrystEngComm, 18 (2016) 4499-4507. (Equal contribution). 13. H. F. Liu, Y. J. Jin, C. G. Li, S. B. Dolmanan, S. F. Guo, S. Tripathy, and C. C. Tan, “High-resolution X-ray diffraction and micro-Raman scattering studies of Ge(:Ga) thin films grown on GaAs (001) substrates by MOCVD”, RCS Advances, 6 (2016) 52725. (Equal contribution) 14. Y. J. Jin, X. H. Tang, J. H. Teng, D. H. Zhang, “Optical properties and bonding behaviors of InSbN alloys grown by metalorganic chemical vapor deposition”, Journal of Crystal Growth, 406 (2015) 12-16. 15. X. Z. Chen, Y. J. Jin, and D. H. Zhang, “Dilute antimonide nitride for long wavelength infrared photodetection”, AIP Conference Proceedings, 1598 (2014) 166. 16. C. K. Chia, A. Iskander, Y. B. Chen, Y. J. Jin, G. K. Dalapati, “Ge and GaAs integration for device applications”, Silicon-Germanium technology and device meeting (ISTDM), 87-88, 2014. 17. X.Z. Chen, D. H. Zhang, Y. J. Jin, J. H. Li, J. H. Teng, “Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys”, Journal of Crystal Growth, 362 (2013) 197–201. 18. Y. Wang, D. H. Zhang, X. Z. Chen, Y. J. Jin, “Bonding and diffusion of nitrogen in the InSbN alloys formed by two-step ion implantation”, Applied physcis letter, 101 (2012) 021905. 19. Y. J. Jin, D. H. Zhang, X. Z. Chen, X. H. Tang,“Sb antisite defects in InSb epilayers prepared by metal-organic chemical vapor deposition”, Journal of Crystal Growth, 318 (2011) 356-359. 20. Y. J. Jin, X. H. Tang, X. Z. Chen, D. H. Zhang, “Properties of InSb (N) epilayers grown by metal-organic chemical vapor deposition”, 2010 IEEE Photonics Global Conference, page 1-4, PGC (2010). 21. Y. J. Jin, Y. Wang, D. H. Zhang, X. H. Tang, B. L. Zhang, “Epitaxial growth of high quality InSb1-xNx by MOCVD”, 2008 IEEE Photonics Global @Singapore (IPGC), page1-4, PGC (2008). 22. Y. J. Jin, Q. X. Yu, S. J. Liu, Y. Liao, “Effect of the structures on the enhancement of ultra-violet photoluminescence intensity in Ag doped ZnO film”, Chinese Journal of Quantum Electronics, 2008, 25(1): 43-48 (in Chinese)