近期论文
查看导师新发文章
（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）
(1) Numerical simulation and study of the metal-organic chemical vapor deposition growth of ZnO film. JianLi, Jiandong Cai, Ziling Wu, Jie Wang, Yanli Pei, Gang Wang*, Physics of Fluids, 31, 027104, 2019. (2) Stability Analysis of Multi Process Parameters for Metal-Organic Chemical Vapor Deposition Reaction Cavity. JianLi, Ziling Wu, Yifeng Xu, Yanli Pei, Gang Wang*, Molecules, 24, 876, 2019. (3) Investigation on electrical properties of indium tin oxide thin films by effective control of crystallographic orientation, Yi Zhuo, Zimin Chen, Zeqi Li, Guangshuo Cai, Xuejin Ma, Yanli Pei and Gang Wang*, Journal of Alloys and Compounds, 786, 177-182, 2019. (4) Numerical simulation and analysis of process parameters of GaN-MOCVD reactor. Jian Li, Jie Wang, Jiandong Cai, Yifeng Xu, Bingfeng Fan and Gang Wang*, International Communications in Heat and Mass Transfer, 91, 64-76, 2018. (5) Chemical reaction-transport model of diethylzinc hydrolysis in a vertical MOCVD reactor. JianLi, Hanlin Gan, Yifeng Xu, Chaoyang Wang, FengLong Gu*, Gang Wang*, Applied Thermal Engineering, 136, 108-117, 2018. (6) Chemical reaction mechanism of ZnO grown using DEZn and N2O in MOCVD. JianLi, Hanlin Gan, Yifeng Xu, Chaoyang Wang,Yanli Pei, FengLong Gu*, Gang Wang*, CrystEngComm, 20, 6775-6785, 2018. (7) Layer-by-layer growth of ε-Ga2O3 thin film by metal–organic chemical vapor deposition, Z. Chen, Z. Li, Y. Zhuo, W. Chen, X. Ma, Y. Pei and G. Wang*, Applied Physics Express, 11, 101101, 2018. (8) High Sensitivity pH Sensor Based on Electrolyte-gated In2O3 TFT. Guangshuo Cai, Lei Qiang, Peng Yang, Zimin Chen, Yanli Pei* and Gang Wang*, IEEE Electron Device Letters, 39, 1409~1412, 2018. (9) High mobility indium tin oxide thin film and its application at infrared wavelengths: model and experiment, Z. Chen, Y. Zhuo, W. Tu, Z. Li, X. Ma, Y. Pei and G. Wang*, Optics Express, 26, 22123, 2018. (10) Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes, Z. Chen, Y. Zhuo, W. Tu, X. Ma, Y. Pei, C. Wang and G. Wang*, Applied Physics Letters, 110, 242101, 2017. (11) AlGaInP-Based LEDs With Al-doped ZnO Transparent Conductive Layer Grown by MOCVD, Jiayong Lin, Yanli Pei, Yi Zhuo, Xuejin Ma and Gang Wang*, IEEE Transactions on Electron Devices, 64, 2017. (12) Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma, R. Hu, Y. Pei, Z. Chen, J. Yang, Y. Li, J. Lin, Y. Zhao, C. Wang, J. Liang, B. Fan, and G. Wang*, IEEE Electron Device Letters, 36, 1163, 2015. (13) GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity, Jingchuan Yang, Yanli Pei, Bingfeng Fan, Shanjin Huang, Zimin Chen, Cunsheng Tong, Hongtai Luo, Jun Liang, and Gang Wang*, IEEE Electron Device Letters, 36, 372, 2015. (14) Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics, Z. Chen, Z. Zheng, Y. Chen, H. Wu, C. Tong, G. Wang*, Z. Wu and H. Jiang*, Journal of Crystal Growth, 387, 48, 2014. (15) Improved carrier injection and efficiency droop in InGaN/GaN light-emitting diodes with step-stage multiple-quantum-well structure and hole-blocking barriers, Z. Zheng, Z. Chen, Y. Chen, H. Wu, S. Huang, B. Fan, Z. Wu, G. Wang* and H. Jiang*, Applied Physics Letters, 102, 241108, 2013. (16) Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells, S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang and G. Wang*, Applied Physics Letters, 101, 041116, 2012. (17) Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers, Zhiyuan Zheng, Zimin Chen, Yulun Xian, Bingfeng Fan, Shanjin Huang, Weiqing Jia, Zhisheng Wu, Gang Wang* and Hao Jiang, Applied Physics Letters, 99, 111109, 2011.
京公网安备 11010802027423号