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1) Weijie Duan, Yong Tang, Xiaoci Liang, Chang Rao, Jinxing Chu, Gang Wang, and Yanli Pei*, “Solution Processed Flexible Resistive Switching Memory based on Al-In-O self-mixing Layer”, J. Appl. Physic. 124, pp. 104501, 2018. 2）Guangshuo Cai, Lei Qiang, Peng Yang, Zimin Chen, Yi Zhuo, Ya Li, Yanli Pei*, and Gang Wang*, “High-sensitivity pH Sensor Based On Electrolyte-Gated In2O3 TFT”, IEEE Electron Device Letters, Vol. 39, pp. 1409-1412, 2018. 3） Ya Li, Jinxing Chu, Weijie Duan, Guangshuo Cai, Xihua Fan, Xinzhong Wang, Gang Wang and Yanli Pei*, “Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor”, ACS Applied Materials & Interfaces, Vol. 10, pp. 24598-24606, 2018. 4）Lei Qiang, Xiaoci Liang, Yanli Pei⁎, Ruohe Yao, Gang Wang⁎, “Extraction method of trap densities for indium zinc oxide thin-film transistors processed by solution method”, Thin Solid Films Vol. 649, pp. 51-56, 2018. 5）Lei Qiang, Xiaoci Liang, Guangshuo Cai, Yanli Pei⁎, Ruohe Yao, Gang Wang⁎, “Modeling drain current of indium zinc oxide thin film transistors prepared by solution deposition technique”, Solid State Electronics Vol. 129, pp. 163-167, 2018. 6） Xiaoci Liang, Chengcai Wang, Jun Liang, Chuan Liu, and Yanli Pei*, “Efficient Defect Engineering for Solution Combustion Processed In-Zn-O thin films for high performance transistors”, Semicond. Sci. Technol., Vol. 32, 095010, 2017. 7）Ya Li, Chuan Liu, Gang Wang, and Yanli Pei*, “Investigation of solution combustion processed nickel oxide p-channel thin film transistors”, Semicond. Sci. Technol. 32, 085004(9pp), 2017 (July). 8）Jiayong Lin, Yanli Pei*, Yi Zhuo, Xuejin Ma, and Gang Wang*, “AlGaInP-based LEDs with Al-doped ZnO Transparent Conductive Layer Grown by MOCVD”, IEEE Trans. Electron Dev., Vol.64, p99(1-4), 2017. 9）Lei Qiang, Wuguang Liu, Yanli Pei*, Gang Wang*, and Ruohe Yao,“Trap states extraction of p-channel SnO thin-film transistors based on percolation and multiple trapping carrier conductions”, Solid-State Electronics，Vol. 129, pp. 163-167, 2017. 10）Jiayong Lin, Yanli Pei*, Yi Zhuo, Zimin Chen, Ruiqin Hu, Guangshuo Cai, and Gang Wang*, “High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer”, Chin. Phys. B, 25(11), 2016, pp. 118506 (4pp). 11）Yanli Pei*， Wuguang Liu， Jingtao Shi, Zimin Chen*, and Gang Wang, “Fabrication and Characterization of p-Type SnO Thin Film with High c-Axis Preferred Orientation”, Journal of Electronic Materials 45, No.11, pp. 5967-5973, 2016. 12）Yanli Pei, Ruihan Pei, Xiaoci Liang, Yuhao Wang, Ling Liu, Haibiao Chen, Jun Liang, “CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process”, Scientific Reports 6, 21551, DOI:10.1038/srep21551, (2016). 13）R. Hu, Y. Pei, Z. Chen, J. Yang, Y. Li, J. Lin, Y. Zhao, C. Wang, J. Liang, B. Fan， and G. Wang, “Ultra-High Field-Effect Mobility Thin-Film Transistors with Metal-Organic Chemical Vapor Deposition Grown In2O3 Channel Treated by Oxygen Microwave Plasma”, IEEE Electron Device Letters, Vol.36, 1163-1165, 2015. 14）Xiaobo Chen, Yu Gu, Guohua Tao, Yanli Pei, Guangjin Wang, and Ni Cui, “Origin of ydrogen evolution activity on MS2 (M=Mo or Nb) monolayers”, J. Mater. Chem. A, Vol. 3, 18898-18905, 2015. 15）Jingchuan Yang, Yanli Pei, Bingfeng Fan, Shanjin Huang, Zimin Chen, Cunsheng Tong, Hongtai Luo, Jun Liang, and Gang Wang, “GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by MOCVD: Ultralow Forward Voltage and Highly Uniformity”, IEEE Electron Device Letters, Vol. 36, pp. 372-374, 2015. 16）Ya Li, Yanli Pei, Ruiqin Hu, Zimin Chen, Yiqiang Ni, Jiayong Lin, Yiting Chen, Xiaoke Zhang, Zhen Shen, Jun Liang, Binfeng Fan, Gang Wang, and He Duan, “Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin Film Transistors With Defects Engineered Alumina Dielectric”, IEEE Trans. Electron Dev. Vol. 62, No. 4, pp. 1184-1188, 2015. 17）Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang*, and Gang Wang, “Performance Improvement of Amorphous Indium-Gallium-Zinc Oxide ReRAM with SiO2 Inserting Layer”, Current Applied Physics, 2015, Vol. 15, 441-445. 18）Yanli Pei, Biaoren Mai, Xiaoke Zhang, Ruiqin Hu, Ya Li, Zimin Chen, Bingfeng Fan, Jun Liang, and Gang Wang, “Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure”, Journal of Electronic Materials, Vol. 44, No. 2 (2015), Page 645-650. 19）Ruiqin Hu, Yanli Pei, Zimin Chen, Jingchuan Yang, Jiayong Lin, Ya Li, Bingfeng Fan, and Gang Wang , “Correlation between Grain Orientation and Carrier Concentration of Poly-crystalline In2O3 Thin Film Grown by MOCVD”, Journal of Materials Science: Volume 50, Issue 3 (2015), Page 1058-1064. 20）Y. Li, Y. L. Pei, R. Q. Hu, Z. M. Chen, Y. Zhao, Z Shen, B. F. Fan, J. Liang, G. Wang, “Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric”, Current Applied Physics 2014, 14, pp. 941-945.
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