朱丽虹 - 厦门大学 - 电子科学与技术学院

个人简介

朱丽虹，1982年2月生，博士，厦门大学电子科学系高级工程师，福建省半导体照明工程技术研究中心和厦门市半导体照明检测认证中心成员。2010年厦门大学物理系微电子学与固体电子学专业博士毕业。目前主要从事GaN基半导体材料生长和发光器件的研究以及半导体发光器件性能的测试研究工作。已在国内外重要学术刊物上发表多篇学术论文。

研究领域

GaN基材料生长和发光器件的研究半导体照明检测技术

近期论文

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L. H. Zhu, F. M. Zeng, W. Liu, Z. C. Feng, B. L. Liu*, Y.J. Lu, Y.L. Gao, and Z. Chen, Improved Quantum Efficiency in Semipolar InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth, IEEE Transactions on Electron Devices 60(11), 3573-3579, 2013. L. H. Zhu, W. Liu, F. M. Zeng, Y. L. Gao, B. L. Liu*, Y. J. Lu, and Z. Chen, Efficiency Droop Improvement in InGaN/GaN Light-Emitting Diodes by Graded-Composition Multiple Quantum Wells, IEEE Photonics Journal, 5(2), 8200208(1-8) , 2013. W. Liu, L. H. Zhu*, F.M. Zeng, L. Zhang, W. C. Liu, X. Y. Li, B. L. Liu, and Z. C. Feng, Influence of GaN Barrier Thickness on Optical Properties of In-Graded InGaN/GaN Multiple Quantum Wells, Applied Physics Express, 6(8), 081001(1-4), 2013. Z. C. Feng, L.H. Zhu*, T. W. Kuo, C.Y. Wu, H. L. Tsai, B. L. Liu, and J. R. Yang, Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light- emitting diodes grown by metal-organic chemical vapor deposition, Thin Solid Films, 529, 269-274, 2013. 肖华，吕毅军，朱丽虹*，陈国龙，高玉琳，范贤光，薛睿超，陈忠, 传统白光LED与远程荧光粉白光LED的发光性能比较, 发光学报, 35(1) ,48-54,2013. X. Chen, P.F. Fang, B. Lin, B.L. Liu, and L. H. Zhu*, The Research on Extraction Efficiency of LED by Lateral Surface Triangle Roughening, 2012 International Symposium on Instrumentation & Measurement, Sensor Network and Automation (IMSNA). 2, 433-435, 2012. Y. Lin, Y.L. Gao, Y.J. Lu*, L. H. Zhu, Y. Zhang, Z. Chen*, Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes, Applied Physics Letters, 100, 202108(1-4), 2012. J. H. Zhang, Y. L. Gao, Y. J. Lu*, L. H. Zhu, Z. Q. Guo, G. L. Chen, Z. Chen*, Transient Thermal Resistance Test of Single-Crystal-Silicon Solar Cell, IEEE Transactions on Electron Devices, 59(9)，2345-2349, 2012. 朱丽虹，蔡加法，李晓莹，邓彪，刘宝林*，In组分渐变提高InGaN/GaN多量子阱LED发光性能，物理学报，59(7), 594-599, 2010. L.H. Zhu, Q. H. Zheng, B. L. Liu*, Performance improvement of InGaN/GaN light-emitting diodes with triangular-shaped multiple quantum wells, Semiconductor Science and Technology 24(12)125003, 2009. L.H. Zhu, B. L. Liu*，Optical properties studies in InGaN/GaN multiple-quantum well，Solid-State Electronics, 53, 336-340, 2009. Q. H. Zheng, Y. A. Yin, L. H. Zhu, J. Huang, X. Y. Li and B. L. Liu*, Tailoring the hole concentration in superlattices based on nitride alloys, APPLIED PHYSICS LETTERS 94, 222104 , 2009.