个人简介
1992,9-1996,7 南京大学物理系,半导体专业本科学生; 1996,9-2001,7 南京大学物理系,微电子专业,获理学博士学位; 2001,9-2004,9 香港科技大学电机与电子工程系,副研究员; 2004,9-2013,2 香港微晶先进光电技术有限公司,创始人之一,历任高级工程师,研发部经理,研发总监; 2013,2-今 南京大学电子科学与工程学院,教授。 研究生期间,在国内率先利用光加热低压金属有机化学气象沉积生长了高质量的GaN和AlGaN,在国际上首次提出用肖特基C-V特性模拟法准确测算极化电荷密度。2001年9月到2004年9月,在香港科技大学工作期间,在国际上率先提出并实现了复合沟道结构的GaN基 高电子迁移率晶体管(HEMT);生长制备出性能达到同期国际先进水平的GaN-LED和HEMT器件。2004年9月到2013年2月参与香港微晶先进光电科技有限公司和其子公司晶科电子的创建和发展工作期间取得了一系列富有创新性的科技成果:成功开发出倒装焊大功率LED,亮度可靠性指标达到国际领先水平;在国际上首次成功开发出集成驱动电路的芯片级光源;成功开发出倒装焊HV-LED器件,获得“2010国家半导体照明创新大赛”产品创新大奖;成功开发出晶片级无金线陶瓷基板大功率封装光源及其模组制造技术等等。他的研究成果已在产业界应用,产生了效益,并在国内外产业界产生了较大的影响。共发表SCI收录论文50多篇,获得专利10多项
研究领域
GaN基半导体材料与器件,LED器件工艺与先进封装,光电器件及系统的可靠性分析与寿命预测
近期论文
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The Effect of the Original Thickness of Ag in the Graphene-Ag Nanodots Transparent Conductive Layer on the Electrical and Optical Properties of GaN-Based UV-LEDs, IEEE Transactions on Electron Devices, pp. 1-6, 2018. (Chen W, Zhou YG*, Yu XZ, Xie ZL, Zhang R, and Zheng YD) Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor, IEEE Photonics Technology Letters, vol. 29, pp. 1856-1859, Nov 1 2017. (Wang XL, Zhou YG*, Tian RB, Liu B, Xie ZL, Zhang R, Zheng YD) In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit,IEEE ELECTRON DEVICE LETTERS, vol. 36, pp. 1082-1084, Oct. 2015 (Li JM, Zhou YG*, Qi YD, Miao ZL, Wang YM, Xiu XQ, Liu B, Zhang R, and Zheng YD) Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth, PHYSICA STATUS SOLIDI C, Vol 2, No 7, pp.2663-2667, 2005 (Zhou YG, Chu RM, Liu J, Chen KJ, Lau KM) Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition,JOURNAL OF ELECTRONIC MATERIALS,Vol. 34, No. 1, pp. 112-118, JAN 2005 (Zhou YG, Wang DL, Chu WM, Tang CW, Qi YD, Lu ZD, Chen KJ, Lau KM) Investigation of the polarization-induced charges in modulation-doped AlxGa1-xN/GaN heterostructures through capacitance-voltage profiling and simulation,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1, Vol. 41, No. 4B, pp. 2531-2535, APR 2002 (Zhou YG, Shen B, Someya T, Yu HQ, Liu J, Zhou HM, Zhang R, Shi Y, Zheng YD, Arakawa Y) Gas phase parasitic reactions and Al incorporation efficiency in light radiation heating, low-pressure metal-organic chemical vapor deposition of AlGaN,MATERIALS LETTERS, vol. 45, no.6, pp 331-335, Oct 2000 (Zhou YG, Zhang R, Li WP, Shen B, Chen P, Chen ZZ, Gu SL, Shi Y, Zheng YD and Huang ZC) High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment,IEEE ELECTRON DEVICE LETTERS, Vol. 26, No. 7, pp. 435-437, Jul 2005 (Cai Y, Zhou YG, Chen KJ, Lau KM) AlGaN-GaN double-channel HEMTs,IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 52, No. 4, pp. 438-446, Apr 2005 (Chu RM, Zhou YG, Liu J, Wang DL, Chen KJ, Lau KM)