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I. 表面与界面
(1) InP和GaAs表面
The variation of In islands on InP surface mversus ion sputtering angle observed by the electron energy loss spectroscopy. Hou Xiaoyuan, Yu Mingren, and Wang Xun Chinese Phys. Lett. 2, 31 (1985).
The elimination of In islands on InP surfaces and its mechanism. Jin Xiaofeng, Yu Mingren, and Wang Xun Chinese Phys. Lett. 2, 345 (1985).
A LEED, ELS study of InP(100) surfaces prepared by phosphorus deposition and post annealing. Xiaofeng Jin, Mingren Yu, Furong Zhu, and Xun Wang Semicond. Sci. Technol. 1,293 (1986).
An angle resolved photoemission study of InP(111) clean surface. Hou Xiaoyuan, Dong Guosheng, Ding Xunmin, and Wang Xun Chinese Phys. Lett. 3, 545 (1986).
Comparative high-resolution electron-energy-loss spectroscopy study of hydrogen adsorption on GaAs and InP(111) and (111) surfaces. Xiaoyuan Hou, Shu Yang, Guoaheng Dong, Xunming Ding, and Xun Wang Phys. Rev. B33, 8015 (1987)
Chemical and electronic properties of Ga on InP(100) surface. Xun Wang, Xiaofeng Jin, Mingren Yu, and Furong Zhu Phys. Rev. B36, 7660 (1987).
Dangling bond electronic state on InP(111) surface Xiaoyuan Hou, Guosheng Dong, Xunmin Ding, and Xun Wang Surface Sci. 183, 123 (1987).
The adsorption of oxygen on alkali metal covered GaAs(111) surfaces. Xunmin Ding, Guosheng Dong, Xiaoyuan Hou, abd Xun Wang Solid State Commun. 61, 39 (1987).
A missing row-dimer model of InP(100)(4X2) reconstruction as proposed by LEED, UPS and HREELS studies. Xiaoyuan Hou, Guosheng Dong, Xunmin Ding, and Xun Wang J. Phys. C: Solid State Phys. 20, L121 (1987).
Surface reaction of sodium on InP(111) and its role on enhancement of water vapor adsorption. Guosheng Dong, Xunmin Ding, Xiaoyuan Hou, and Xun Wang Surface Sci. 201, 531 (1988).
Investigation of atomic and electronic structures of InP polar surfaces. Xun Wang Appl. Surface Sci. 33/34, 88 (1988).
A simple method for the evaluation of the surface In atom dimerisation and electronic states of the InP(100) surface. Chunhui Huang, Ling Ye, and Xun Wang Semicond. Sci. Technol. 3, 169 (1988).
Application of HREELS to Al/GaAs and Al/GaP interfaces X.M.Ding, G.S.Dong, X.K.Lu, X.Y.Hou, P.Chen, and X.Wang Appl. Surface Sci. 41/42, 123 (1989).
Formation of In/GaP(111) interface studied by energy loss spectroscopy, x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy. M.R.Yu, P.Q.Wang, X.F.Jin, and X.Wang J.Vac.Sci.Technol. B4,1014 (1990).
Surfac adsorption properties of GaP(111) studied by XPS, UPS and HREELS. H.Y.Xiao, X.K.Lu, G.S.Dong, X.M.Ding, P.Chen, and Xun Wang Physica Scripta, 41, 1037 (1990).
Surface properties of Al0.7Ga0.3As(100) studied by XPS and ARUPS G.S.Dong, C.H.Huang, X.K.Lu, P.Chen, and Xun Wang Vacuum, 41, 1058 (1990).
(2) Si表面
Thermal desorption study of deuterium on Si(100) surface. Hu Jihuang, Chen Keming, Hu Xingen, Zhuang Chenqun, and Wang Xun Chinese Phys. Lett. 2, 149 (1985).
Structural model of Si(100)-c(4X4). Hongchuan Wang, Rongfu Lin, and Xun Wang Phys. Rev. B36, 7712 (1987).
High temperature nitridation structures of the Si(111)-(7X7) surface. Hongchuan Wang, Rongfu Lin, and Xun Wang Surface Sci. 188, 199 (1987).
STM studies of ultrathin gate oxide films grown on highly B-doped Si(100) substrates Q. Cai, Y. F. Hu, S. T. Hu, and X. Wang J. Vac. Sci. Technol. 18, 2384 (2000).
Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge Xue-sen Wang, Z. Li, L. Wang, Y. Hu, G. Zhai, J. Yang, Y. Wang, K. Fung, J. Tang, Xun Wang, and Nelson Cue Jpn. J. Appl. Phys. I, 40, 4292 (2001)
Nitridation of Si(111) X. S. Wang, G. Zhai, J. Yang, L. Wang, Y. Hu, Z. Li, J. C. Tang, X. Wang, K. K. Feng, and N. Cue Surface Sci. 494, 83 (2001)
Ge islanding growth on nitridized Si and the effect of Sb surfactant Yanfang Hu, Xue-sen Wang, Nelson Cue and Xun Wang J. Phys: Condens. Matter 14, 8939 (2002)
Resonant photoemission from Si(001) Gang Chen, Xunmin Ding, Xun Wang, and Zheshen Li Surf. Sci. 524, 137 (2003)
First-principles study of the atomic and electronic structure of Pb on Si(001) Y. Zhu, L. Ye, and X. Wang J. Appl. Phys. 100, 083703 (2006).
GaN表面
Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source. Z.Q.He, X.M.Ding, X.Y.Hou, and Xun Wang Appl. Phys. Lett. 64, 315 (1994).
Nitridation of GaAs surfaces stimulated by nitrogen glow discharge. Q.J.Xu, X.M.Ding, X.Y.Hou, and Xun Wang Appl. Surface Sci. 104/105, 468 (1996).
(4) GaAs表面的S钝化
The electronic structure of (NH4)2Sx treated GaAs(100) surface studied by UPS and XPS X.F.Jin, M.Y.Mao, Y.S.Luo, G.S.Dong, P.Chen, and Xun Wang Vacuum, 41, 1061 (1990).
Electrochemical sulfur pasivation of GaAs. X.Y.Hou, W.Z.Cai, Z.Q.He, P.H.Hao, Z.S.Li, X.M.Ding, and Xun Wang Appl. Phys. Lett. 60, 2252 (1992).
S2Cl2 treatment: a new sulfur passivation method of GaAs surface. Z.S.Li, W.Z.Cai, R.Z.Su, G.S.Dong, D.M.Huang, X.M.Ding, X.Y.Hou, and Xun Wang Appl. Phys. Lett. 64, 3425 (1994).
Hot wall epitaxial growth of ZnSe on S-passivated GaAs(100) substrates. W.Z.Cai, Z.S.Li, X.M.Ding, X.Y.Hou, J.Wang, C.S.Zhu, R.Z.Su, and Xun Wang J. Cryst. Growth, 142, 397 (1994).
Raman scattering characterization of the crystalline qualities of ZnSe films grown on S-passivated GaAs(100) substrates J.Wang, X.H.Liu, Z.S.Li, R.Z.Su, Z.Ling, W.Z.Cai, X.Y.Hou, and Xun Wang Appl. Phys. Lett. 67, 2043 (1995).
A mild electrochemical sulfur passivation method for GaAs(100) surfaces. Z.S.Li, X.Y.Hou, W.Z.Cai, W.Wang, X.M.Ding, and Xun Wang J. Appl. Phys. 78, 2764 (1995).
Passivation of GaAs surface by sulfur glow discharge. Xiaoyuan Hou, Xiying Chen, Zheshen Li, Xunming Ding, and Xun Wang Appl. Phys. Lett. 69, 1429 (1996).
X-ray photoelectron spectroscopic studies of sulphur-passivated GaAs surfaces. X.Wang, X.Y.Hou, Z.S.Li and X.Y.Chen Surf. Interface Anal. 24, 564 (1996).
Passivation of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution X.A.Cao, X.Y.Hou, X.Y.Chen, Z.S.Li, R.Z.Su, X.M.Ding, X.Wang Appl. Phys. Lett. 70, 747 (1997).
. Gallium sulfide thin film grown on GaAs(100) by microwave glow discharge. X.Y.Chen, X.Y.Hou, X.A.Cao, X.M.Ding, and Xun Wang J. Cryst. Growth, 173, 51 (1997)
. Synchrotron radiation photoemission study of S-passivated GaAs surfaces X.M.Ding, Z.L.Yuan, H.T.Hu, Z.S.Li, Y.F.Chen, X.Y.Chen, X.A.Cao, X.Y.Hou, Xun Wang, E.D.Lu, S.H.Xu, P.S.Xu, X.Y.Zhang Nuclear Instru. & Methods, B133, 90 (1997).
(5) SiC表面
Atomic structural model of (2?3 × 2?3)-R30o reconstruction for 3C -Si(111) crystallized islands on Si(111) by C60 precursor Jian-shu Yang, Xue-sen Wang, G.B.Zhui, Nelson Cue, and Xun Wang Surface Sci. 476, 1 (2001)
Self-assembled growth of cubic silicon carbide nano-islands on silicon Jianshu Yang, Xuesen Wang, Guangjie Zhai, Nelson Cue, and Xun Wang J. Cryst. Growth 224, 84 (2001)
Atomic and electronic structures of 3C -SiC(111)-(2?3′2?3)–R30° surface reconstruction Xiang-yang Peng, Xun Wang, and Ling Ye Surf. Sci. 501, 125 (2002).
Theoretical study of hydrogenated 3C -SiC(001)-(2×1) surface Xiangyang Peng, Ling Ye, and Xun Wang Surf. Sci. 571, 21 (2004)
Carbon induced (?3 ′ ?3)R30°reconstruction on Si(111) surface: a theoretical study Xiangyang Peng, Ling Ye, and Xun Wang Surf. Sci. 548, 51 (2004)
A new atomic structural model for SiC(0001)(3×3) reconstruction based on the first principles study Yun Li, Ling Ye, and Xun Wang Surf. Sci. 600, 298 (2006).
The structure models for the (2?3×2?3)-R30o reconstructions of SiC(111) and 6H-SiC(0001) surfaces Yun Li, Xun Wang, and Ling Ye J. Phys.-Conden. Matt. 18, 6953 (2006).
II. 硅锗量子阱和超晶格
Growth and characterization of Si molecular beam epilayer on GaP(111) substrates. Weidong Jiang, Guoliang Zhou, Keming Chen, Chi Sheng, Xiangjiu Zhang, and Xun Wang Appl. Phys. Lett. 51, 1910 (1987).
Heteroepitaxial growth of Ge film on Si substrates by molecular beam epitaxy. G.L.Zhou, K.M.Chen, W.D.Jiang, C.Sheng, X.J.Zhang, and Xun Wang Appl. Phys. Lett. 53, 2179 (1988).
The interface electronic states and valence band offsets of the Si/GaP heterojunction. Chunhui Huang, Ling Ye, and Xun Wang J. Phys.: Condens. Matt. 1, 907 (1989).
RHEED intensity oscillation of MBE grown Si/Ge ultrathin multilayered structures. Xun Wang, K.M.Chen, G.L.Gin, C.Sheng, G.L.Zhou, W.D.Jiang, X.J.Zhang, and M.R.Yu Surface Sci. 228, 334 (1990).
Highly flat GexSi1-x/Si heterointerfaces grown by molecular beam epitaxyin two-dimensional growth mode. X.Wei, G.L.Zhou, T.C.Zhou, C.Sheng, M.R.Yu, and Xun Wang Vacuum, 43, 1035 (1992).
Suppression of interfacial boron accumulation and defect density in molecular beam epitaxial silicon. D.W.Gong, X.Wei, F.Lu, Q.H.Wang, H.H.Sun, and Xun Wang Solid State Commun. 88, 731 (1993).
An investigation on the thermal stability of the GexSi1-x superlattice grown by MBE. G.L.Zhou, X.J.Zhang, C.Sheng, and Xun Wang J. Cryst. Growth, 127, 456 (1993).
Interfacial defects in Si1-xGex/Si quantum well detected by deep level transient spectroscopy. Qinhua Wang, Fang Lu, Dawei Gong, Jianbao Wang, Henghui Sun, and Xun Wang Phys. Rev. B50, 18226 (1994).
Single-frequency admittance spectroscopy measurement of band offset in a Si/Si1-xGex quantum well. Fang Lu, Jiayu Jiang, Henghui Sun, Dawei Gong, and Xun Wang J. Appl. Phys. 75, 2957 (1994).
Effects of rapid thermal annealing on electrical properties of heavily doped silicon molecular beam epitaxial layer with B2O3 doping source. Qiang Xu, Jian Yuan, Jianbao Wang, Daming Huang, Fang Lu, Henghui Sun, Xun Wang, and Rong Liu J. Appl. Phys. 76, 1697 (1994).
Interfacial defects related to the substrate treat in the molecular beam epitaxial silicon. Chi Sheng, Dawei Gong, Xing Wei, Fang Lu, Qinhua Wang, Henghui Sun, and Xun Wang Jpn. J. Appl. Phys. 33, 2276 (1994).
Rutherford backscattering research on the strained SiGe/Si structure. J.H.Hu, Y.L.Fan, D.W.Gong, X.Wang, and Z.T.Zhou Solid State Commun. 92, 963 (1994).
Electroreflectance study of strained layer GexSi1-x/Si multiple quantum wells. Shihong Pan, Shuo Huang, Wei Chen, Cunzhou Zhang, Chi Sheng, and Xun Wang Chin. Phys. Lett. 11, 119 (1994).
Si1-xGex/Si single-mode rib waveguides with 0.5dB/cm loss by molecular beam epitaxy. Yong Gao, Enke Liu, Guozheng Li, Xiding Liu, Xiangjiu Zhang, Xuekun Lu, and Xun Wang Chin. Phys. Lett. 11, 734 (1994).
Quantum confinement of holes in Si1-xGex/Si quantum wells studied by admittance spectroscopy. F.Lu, J.Y.Jiang, H.H.Sun, D.W.Gong, X.J.Zhang, and Xun Wang Phys. Rev. B51, 4213 (1995).
Admittance spectroscopy studies of boron delta-doped Si quantum wells. Jianhong Zhu, Dawei Gong, Bo Zhang, Fang Lu, Chi Sheng, Henghui Sun, and Xun Wang Phys. Rev. B52, 8959 (1995).
Photovoltaic investigation of interband transitions in SiGe/Si multiple quantum well J.B.Wang, D.W.Gong, F.LU, H.H.Sun, and Xun Wang Appl. Phys. Lett. 66, 1782 (1995).
Si1-xGex/Si asymmetric 2X2 electro-optical switch of total internal reflection type. Yong Gao, Xiding Liu, Guozheng Li, Enke Liu, Xiangjiu Zhang, Xuekun Lu, Jihuang Hu, and Xun Wang Appl. Phys. Lett. 67, 3379 (1995).
Detection of defects at homoepitaxial interface by deep-level transient spectroscopy F.Lu, D.W.Gong, H.H.Sun, and Xun Wang J. Appl. Phys. 77, 213 (1995).
Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer. J.B.Wang, Q.Xu, J.Yuan, F.Lu, H.H.Sun, and Xun Wang J. Appl. Phys. 77, 2974 (1995).
Molecular beam epitaxial growth of Ge on Si(111) substrates covered by a SiO2 mask. Xiangjiu Zhang, Hongqiang Lu, Dawei Gong, Xuekun Lu, Xiangjun Chen, Jihuang Hu, Weining Huang, Yongliang Fan, and Xun Wang J. Cryst. Growth, 150, 964 (1995).
Hole confinement in boron delta-doped Si quantum wells studied by admittance spectroscopy. Jianhong Zhu, Dawei Gong, Bo Zhang, Fang Lu, Chi Sheng, Henghui Sun, and Xun Wang J. Cryst. Growth, 157, 378 (1995).
SiGe/Si bifurcation optical active switch based on plasma dispersion effect. Y.Gao, G.Z.Li, X.D.Liu, E.K.Liu, X.J.Zhang, X.K.Lu, J.H.Hu, and Xun Wang Electron. Lett. 31, 1740 (1995).
Capacitance-voltage chacteristics of a Schottky junction containing SiGe/Si quantum wells. Fang Lu, Dawei Gong, Jianbao Wang, Qinhua Wang, Henghui Sun, and Xun Wang Phys. Rev. B53, 4623 (1996).
Interface broadening and Raman scattering in SiGe/Si superlattices. Xiaohan Liu, Daming Huang, Zuimin Jiang, and Xun Wang Phys. Rev. B53, 4699 (1996).
Suppression of Si-Ge interfacial vibration mode in Raman spectrum of Si6Ge4 superlattice. Chi Sheng, Tichen Zhou, Qun Cai,Dawei Gongm Mingren Yu, Xiangjiu Zhang, and Xun Wang Phys. Rev. B53, 10771 (1996).
Crystalline quality of Si epilayers influenced by Sb doping Xuekun Lu, Zuiming Jiang, Daming Huang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang J. Cryst. Growth,158,169 (1996).
Photoluminescence from trapped exitons in Si1-xGex/Si quantum well structures. Xiaohan Liu, Daming Huang, Zuimin Jiang, Xuekun Lu, Xiangjiu Zhang, and Xun Wang J. Phys.: Conden. Mat. 8, 3947 (1996).
Observation of boron doping induced surface roughening in silicon molecular beam epitaxy. Xuekun Lu, Zuimin Jiang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang Appl. Phys. Lett. 68, 3278 (1996).
Hole confinement in boron delta-doped silicon quantum wells studied by deep level transient spectroscopy. J.H.Zhu, D.W.Gong, B.Zhang, F.Lu, C.Sheng, H.H.Sun and Xun Wang Phys. Rev. B54, 2662 (1996).
Photoabsorption and photoresponse behaviors of Si1-xGex/Si quantum wells. Yu Yang, Dawei Gong, Xingliang Huang, Xiaohong Shi, Chi Sheng, and Xun Wang Solid State Commun. 97, 627 (1996).
Analysis of capacitance-voltage characteristics of Si1-xGex/Si quantum well structures. J.B.Wang, F.Lu, S.K.Zhang, B.Zhang, D.W.Gong, H.H.Sun, and Xun Wang Phys. Rev. B54, 7979 (1996).
Coevaporative Sb doping and crystalline quality in Si molecular beam epitaxy. Xuekun Lu, Zuimin Jiang, Kaifeng Liu, Haijun Zhu, Xiangjiu Zhang, and Xun Wang J. Cryst. Growth, 158, 169 (1996).
A deep level transient spectroscopic study of boron-ion-implanted SiGe/Si single quantum wells. Fang Lu, Jianbao Wang, Jiayu Jiang, Dawei Gong, Henghui Sun, and Xun Wang J. Phys. Condens. Matter, 9, 3427 (1997).
Extremely narrow Sb Delta-doped epitaxial layer characterixed by X-ray reflectivity Jiang Zuimin, Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Zhu Haijun, Zhang Xiangjiu, Wang Xun Chin. Phys. Lett. 14, 686 (1997).
Ge dots with highly uniform size distribution grown on Si substrate by molecular beam epitaxy Xun Wang, Z.M.Jiang, H.J.Zhu, F.Lu, D.M.Huang, X.H.Liu, C.W.Hu, Y.F.Chen, Z.Q.Zhu, and T.Yao Appl. Phys. Lett.71, 3543 (1997).
A silicon-based low dimensional quantum structure--self-assembly grown germanium quantum dots. Z.M.Jiang, H.J.Zhu, F.Lu, D.M.Huang, Xun Wang, Y.F.Chen, Z.Q.Zhu, and T.Yao Nonlinear Optics 18, 73 (1997).
Surfactant influence on the Ge heteroepilayer on Si(001) studied by x-ray diffraction and atomic force microscopy. Haijun Zhu, Zuimin Jiang, Amei Xu, Chunming Mao, Dongzhi Hu, Xiaohan Liu, Daming Huang, Xiangjiu Zhang, Xun Wang, Jielin Sun, and Minqian Li J. Cryst. Growth, 179,115(1997).
Monolithic integration of SiGe/Si modulator and multiple quantum well photodetector for 1.55m m operation Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, J.Qin, Xun Wang Appl. Phys. Lett. 73, 3504 (1998).
Well depth fluctuation of Si1-x Gex/Si quantum-well structures studied by conductance-voltage technique Sheng-kun Zhang, Zui-min Jiang, Jie Qin, Dong-zhi Hu, Fang Lu, and Xun Wang J. Appl. Phys. 84, 5587 (1998)
Effect of layer thickness variation on light scattering by longitudinal accoustic phonons in SiGe/Si superlattices. X.H.Liu, D.M.Huang, X.J.Wang, H.J.Zhu, and Xun Wang Thin Solid Films, 321, 163 (1998)
Effect of Sb as surfactant on the diffusion of epilayer Ge atoms into Si subsrtrate. Xu, Z.Jiang, H.Zhu, X.Liu, D.Hu, X.Wang, M.Mao, X.Zhang, J.Hu, D.Huang, and Xun Wang Thin Solid Films, 321, 116 (1998)
Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100). Xun Wang, Z.M.Jiang, H.J.Zhu, F.Lu, J.Qin, D.M.Huang, Y.F.Chen, Z.Q.Zhu, and T.Yao Thin Solid Films, 321, 60 (1998)
Near band-edge photoluminescence in strined and relaxed Si1-xGex/Si quantum wells. Y.Yang, S.Jiang, Z.Tian, X.Wu, C.Sheng, and Xun wang Jpn. J. Appl. Phys. 37, 4A , 1884 (1998).
Oxygen d-doped Si multi-layer grown by molecular beam epitaxy C.Sheng, F.Lin, D.Gong, J.Wan, Y. Fan, and X.Wang Jpn. J. Appl. Phys. 37, 3B, 1206 (1998).
Coulomb charging effect in Ge quantum dots studied by admittance spectroscopy S.K.Zhang, H.J.Zhu, F.Lu, Z.M.Jiang, and Xun Wang Phys. Rev. Lett. 80, 3340 (1998).
Strong surface segregation of Sb atoms at low temperatures durning Si molecular beam epitaxy. Z.M.Jiang, C.W.Pei, L.S.Liao, X.F.Zhou, X.J.Zhang, Xun Wang, Q.J.Jia, X.M.Jinag, Z.H.Ma, Terry Smith, I.K.Sou Thin Solid Films, 336, 236 (1998).
Strain relaxation by alloying effects in Ge islands grown on Si (001) X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Qin, Z. M. Jiang, X. Wang, and R. Leon Phys. Rev. B 60, 15605 (1999).
Conductance-voltage chacteristics of SiGe/Si quantum-well structures. F.Lu, S.K.Zhang, Z.M.Jiang, J.Qin, D.Z.Hu, and X.Wang J. Korean Phys. Soc. 34, S73, (1999).
Low-loss 1′2 multimode interference wavelength demultiplexer in silicon-germanium alloy Baojun Li , Guozheng Li , Enke Liu , Zuimin Jiang , Jie Qin , and Xun Wang IEEE Photonics Technol. Lett. 11, 575 (1999)
Study of strain in partially relaxed Ge epilayers on Si(100) substrate Z.M.Jiang, C.W.Pei, X.F.Zhou, W.R.Jiang, B.Shi, X.H.Liu, Xun Wang, Q.J.Jia, W.L.Zheng, and X.M.Jiang Appl. Phys. Lett. 75, 370 (1999).
1.55 μm reflection-type optical waveguide switch based on SiGe/Si plasma dispersion effect. Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Chengwen Pei, and Xun Wang Appl. Phys. Lett. 75, 1 (1999)
SiGe/Si Mach-Zehnder interferometer modulator based on the plasma dispersion effect Baojun Li , Zuimin Jiang , Xiangjiu Zhang , Xun Wang, Jianjun Wan , Guozheng Li , and Enke Liu Appl. Phys. Lett. 74, 2108 (1999).
Integration of Wavelength Signal Divider and Infrared Photodetectors Based on Plasma Dispersion Effect in SiGe/Si Bao-jun Li, Zui-min Jiang, Cheng-wen Pei, Jie Qin, Xun Wang, Guo-zheng Li, Jian-jun Wan, and En-ke Liu Appl. Phys. Lett. 74, 1663 (1999)
Thermal stability of Si/Si1-xGex quantum well studied by admittance spectroscopy. Feng Lin, Lian Ke, Chi Sheng, Da-wei Gong, Fang Lu, and Xun Wang J. Appl. Phys. 87, 1947 (2000).
Coulomb Charging Effect of Holes in Ge Quantum Dots Studied by Deep Level Transient Spectroscopy. Sheng-kun Zhang, Fang Lu, Zui-min Jiang, and Xun Wang Thin Solid Films, 369, 65 (2000).
Boron-mediated growth of Ge quantum dots on Si(100) substrate. Xingfei Zhou, Bin Shi, Zuimin Jiang, Weirong Jiang, Dongzhi Hu, Dawei Gong, Yongliang Fan, Xiangjiu Zhang, Xun Wang, Yuesheng Li Thin Solid Films, 369, 92 (2000).
Y-branch 1.3/ 1.55 m wavelength demultiplexer based on the plasma dispersion effect Baojun Li, Jianjun Wan, Guozheng Li, Zuimin Jiang, Enke Liu, Xun Wang Thin Solid Films, 369, 419 (2000).
Composition and its impact on shape evolution in Ge(Si)/Si islands X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Qin, Z. M. Jiang, X. Wang, and R. Leon Appl. Phys. Lett. 77, 1304 (2000).
Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, and X. Wang Appl. Phys. Lett. 77, 1304 (2000).
Optical absorption in SiGe/Si quantum well structures created by subband transitions Y. Yang, X. Mao, H.W. Yang, W. Zhou, Z.L. Zhou, H. L. Liu, and Xun Wang Chin. Phys. Lett. 18, 1655 (2001)
Growth of Ge quantum dots on vicinal Si(001) substrate by solid phase epitaxy D. Z. Hu, D. T. Zhao, W. R. Jiang, Z. M. Jiang, Y. L. Fan, and X. Wang J. Cryst. Growth 236, 557 (2002)
III. 硅基光电子材料
(1) 多孔硅
Efficient infrared-upconversion in porous silicon: a quantum-confinement induced effect. J.Wang, H.B.Jiang, W.C.Wang, J.B.Zheng, F.L.Zhang, P.H.Hao, X.Y.Hou, and X.Wang Phys. Rev. Lett. 69, 3252 (1992).
Pinning of photoluminescence peak positions for light-emitting porous silicon: an evidence of quantum size effect. Xun Wang, D.M.Huang, L.Ye, M.Yang, P.H.Hao, H.X.Fu, X.Y.Hou, and X.D.Xie Phys. Rev. Lett. 71, 1265 (1993).
Anisotropy of infrared-upconversion luminescence generation in porous silicon. J.Wang, H.B.JIang, W.C.Wang, J.B.Zheng, F.L.Zhang, P.H.Hao, X.Y.Hou, and Xun Wang Phys. Rev. B48, 5653 (1993).
Large blue shift of light emitting porous silicon by boiling water trearment. X.Y.Hou, G.Shi, W.Wang, F.L.Zhang, P.H.Hao, D.M.Huang, and Xun Wang Appl. Phys. Lett. 62, 1097 (1993).
Critical conditions for achieving blue light emitting from porous silicon. Xun Wang, G.Shi, F.L.Zhang, H.J.Chen, W.Wang, P.H.Hao, and X.Y.Hou Appl. Phys. Lett. 63, 2363 (1993).
Improvement of electroluminescence properties of light-emitting porous silicon. F.L.Zhang, P.H.Hao, G.Shi, X.Y.Hou, D.M.Huang, and Xun Wang Semicond. Sci. Technol. 8, 2015 (1993).
Study of the Raman peak shift and linewidth of light-emitting porous silicon. Min Yang, Daming Huang, Pinghai Hao, Fulong Zhang, Xiaoyuan Hou, and Xun Wang J. Appl. Phys. 75, 651 (1994).
Transient electroluminescence behavior and mechanism of a Schottky-type porous silicon doide. Jian Wang, Fulong Zhang, Wencheng Wang, Jiabiao Zheng, Xiaoyuan Hou, and Xun Wang J. Appl. Phys. 75, 1070 (1994).
Luminescence behavior and mechanism of light-emitting porous silicon. Xun Wang Modern Physics Letters, B8, 69 (1994).
Temperaturedependent picosecond time-resolved carrier dynamics in visible light-emitting porous silicon. Jian Wang, Wencheng Wang, Jiabiao Zheng, Fulong Zhang, Xiaoyuan Hou, Xun Wang, Hezhou Wang, and Xiguang Zheng Solid State Commun. 88, 795 (1994).
Energy band lineup at the porous silicon/ silicon heterointerface measured by electron spectroscopy. P.H.Hao, X.Y.Hou, F.L.Zhang, and Xun Wang Appl. Phys. Lett. 64, 3602 (1994).
Optical study of photon-trapped porous silicon. Liangyao Chen, Xiaoyuan Hou, Daming Huang, Pinghai Hao, Fulong Zhang, Xingwei Feng,Youhua Qian, and Xun Wang Jpn. J. Appl. Phys. 33, 1937 (1994).
Origin of multiple-peak photoluminescence spectra of light-emitting porous silicon Xun Wang, Pinghai Hao, Daming Huang, Fulong Zhang, Min Yang, and Mingren YU Phys. Rev. B50, 12230 (1994).
Passivation of porous silicon by wet thermal oxidation. Huajie Chen, Xiaoyuan Hou, Gubo Li, Fulong Zhang, Mingren Yu, and Xun Wang J. Appl. Phys. 79, 3282 (1996).
Pulse anodic etching: an effective method of preparing light-emitting porous silicon. Xiao-yuan Hou, Hong-lei Fan, Lei Xu, Fu-long Zhang, Ming-ren Yu, and Xun Wang Appl. Phys. Lett. 68, 2323 (1996).
Transient photovoltaic investigation of a Schottky-type porous silicon diode. Shiyou Zhao, Xingze Lu, Fulong Zhang, Hongbing Jiang, Wencheng Wang, Xiaoyuan Hou, and Xun Wang J. Phys. D: Appl. Phys. 29, 1326 (1996).
Passivation of light-emitting porous silicon by rapid thermal treatment in NH3. G. Li, X.Hou, S.Yuan, H.Chen, F.Zhang, H.Fan, and Xun Wang J.Appl. Phys. 80, 5967 (1996).,
Stable and intense blue-green emission in porous silicon achieved by amine immersion and rapid thermal oxidation Gu-bo Li, Liang-sheng Liao, Xiao-bing Liu, Xiao-yuan Hou, and Xun Wang Appl. Phys. Lett. 70,1284 (1997).
Photoluminescence studies of porous silicon microcavities Z. H. Xiong , S. Yuan , Z. M. Jiang , J. Qin , C. W. Pei, L. S. Liao* , X. M. Ding , X. Y. Hou , Xun Wang J. Lumin. 80, 137 (1999)
Luminescent erbium-doped porous silicon bilayer structures Lanlan Gu, Zhuhong Xiong, Gang Chen, Zhisong Xiao, Daiwei Gong, Xiaoyuan Hou, and Xun Wang Adv. Mater. 13, 1402 (2001)
(2) PBG
Defective photonic crystals with greatly enhanced second harmonic generation B. Shi, Z. M. Jiang, and Xun Wang Opt. Lett. 26, 1194 (2001)
Silicon-based photonic crystal heterostructure Z. M. Jiang, B. Shi, D. T. Zhao, J. Liu, and Xun Wang Appl. Phys. Lett. 79, 3395 (2001)
A nonlinear photonic crystal structure with extraordinary high efficiency for third-harmonic generation Bin Shi, and Xun Wang Appl. Phys. Lett. 80, 3667 (2002)
A two-dimensional nonlinear photonic crystals for strong second harmonic generation B. Shi, Z. M. Jiang, X. F. Zhou, and X. Wang J. Appl. Phys. 91, 6769 (2002)
A Silicon-based optical waveguide polarizer using photonic band gap Dengtao Zhao, Bin Shi , Zuimin Jiang, Yongliang Fan, and Xun Wang Appl. Phys. Lett. 81, 409 (2002).
Optical delay in defective photonic band-gap structures Jian Liu, Bin Shi, Dengtao Zhao and Xun Wang J. Opt. A: Pure Appl. Opt. 4, 636 (2002)
Fabrication and performance of a medium dependent SiO2/Si photonic heterostructure device D. T. Zhao, H. Zhou, Z. M. Jiang, Y. L. Fan, and Xun Wang Opt. Lett. 28, 843 (2003)
(3) Er/Si
The role of codopant oxygen in erbium doped silicon. Jun Wan, Ling Ye, Qiang Sun, and Xun Wang Phys. Rev.B58, 10415 (1998)
Visible and infrared photoluminescence from Er doped SiOx J. Wan, C. Sheng, F. Lu, S. Yuan, D. W. Gong, L. S. Liao, Y. L. Fang, F. Lin and X. Wang J. Lumin. 80, 369 (1999)
X-ray reflectivity measurement of delta-doped erbium profile in silicon molecular beam epitaxial layer J.Wan, Z.M.Jiang, D.W.Gong, Y.L.Fan, C.Sheng, Xun Wang, Q.J.Jin, W.L.Zheng, and X.M.Jiang Phys. Rev. B59, 10697 (1999)
Erbium-doped silicon-rich SiO2/Si thin films fabricated by metal vapor vacuum arc ion source implanation Fei Xu, Zhisong Xiao, Guoan Cheng, Zhongzhen Yi, Tonghe Zhang, Lanlan Gu, and Xun Wang J. Phys.: Conden. Matt. 14, L63 (2002).
High concentration erbium doping of silicon-rich SiO2 thin films on silicon Fei Xu, Zhisong Xiao, Guoan Cheng, Zhongzhen Yi, Tonghe Zhang, Lanlan Gu and Xun Wang Thin Solid Films 410, 94 (2002).
Surface structures of erbium silicide ultra thin films formed by solid phase epitaxy on Si(100) Gang Chen, Jun Wan, Jianshu Yang, Xunming Ding, Ling Ye, and Xun Wang Surf. Sci. 513, 203 (2002)
Photoemission study on the initial stage of Er/Si(100) interface formation Gang Chen, Xunmin Ding, Zheshen Li, and Xun Wang J. Phys: Condens. Matter 14, 10075 (2002)
The strong correlation of 4f electrons of erbium in silicon Yu Fu, Zhong Huang, Xun Wang, and Ling Ye J. Phys. Condens. Matter 15, 1437 (2003)
IV. 其他
(1) II-VI族半导体
Quality of ZnSe/GaAs epilayers studied by spatial correlation model of Raman scattering. J.Wang, W.H.Yao, J.B.Wang, H.Q.Liu, H.H.Sun, Xun Wang, and Z.L.Pang Appl. Phys. Lett. 62, 2854 (1993).
Hot wall epitaxial growth and characterization of diluted magnetic semiconductor Zn1-xMnxSe. J.Wang, Aziz-Ul-Haq Qureshi, Y.S.Tian, Xun Wang, Y.Hu, and S.D.Zheng J. Cryst. Growth, 126, 651 (1993).
Optical chacterization of ZnSe/ZnSSe superlattices pseudomorphically grown on GaAs(100) substrates by molecular beam epitaxy. J.Wang, X.Wang, Z.Q.Zhu, and T.Yao J. Appl. Phys. 77, 2709 (1995).
Structural chacteration of diluted magnetic semiconductor ZnMnSe films grown by hot wall epitaxy on GaAs(100) substrates. J.Wang, C.S.Zhu, A.U.Qureshi, D.M.Huang, X.Wang, and X.L.Shen J. Cryst. Growth, 152, 286 (1995).
Effects of quantum confinement and strain in Zn1-xCdxSe/ZnSe strained-layer superlattices J.Wang, Xun Wang, Z.Q.Zhu, and T.Yao J. Phys.: Condens. Matt. 7, 5835 (1995).
Optical studies on epitaxy films and superlattices of diluted magnetic semiconductor Zn1-xMnxSe Xuezhong Wang, Xi Chen, Jizhou Liu, Chenjia Chen, Jie Wang, Zhen Ling, Xun Wang, Shumei Wang, and Shaozhe Lu Solid State Commun. 95, 525 (1995).
Crystal structure and Raman scattering in Zn1-xMgxSe alloys. Daming Huang, Caixia Jin, Donghong Wang, Xiaohan Liu, Jie Wang, and Xun Wang Appl. Phys. Lett. 67, 3611 (1995).
Determination of Mn composition in Zn1-xMnxSe from Faraday rotation analysis. Y.X.Zhang, L.Y.Chen, S.M.Zhou, Y.D.Wang, Y.Wang, Y.H.Qian, J.Wang, C.X.Jin, and X.Wang J. Appl. Phys. 79, 5193 (1996).
Raman spectra of Zn1-xMgxSySe1-y quaternary alloys. Donghong Wang, Daming Huang, Caixia Jin, Xiaohan Liu, Zheng Lin, Jie Wang, and Xun Wang J. Appl. Phys. 80, 1248 (1996).
Deep level transient spectroscopic studies of ZnSe/GaAs heterointerfaces F.Lu, S.K.Zhang, J.Wang, Z.S.Li, L.Ke, J.B.Wang, H.H.Sun, and X.Wang J. Phys.: Cond. Matt.9, 995 (1997).
Raman scattering from ZnSe1-xTex alloy grown on GaAs(100) by molecular beam epitaxy Z.Ling, J.Wang, C.X.Jin, D.H.Huang, D.M.Huang, X.Y.Hou, and X.Wang Nonlinear Optics 18, 231 (1997).
Growth and optical characterization of dileted magnetic semiconductor Zn1-xMnxSe/ZnSe strained-layer superlattices C.Jin, B.Zhang, Z.Ling, J.Wang, X.Hou, Y.Segawa, and Xun Wang J. Appl. Phys. 81, 5148 (1997).
Phonon modes of ZnS1-xTex alloys epitaxially grown on (100) GaAs substrate C.X.Jin, Z.Ling, D.H.Wang, D.M.Huang, X.Y.Hou, and Xun Wang J. Appl. Phys. 81,3465 (1997).
Lateral magnetoresistances of epitaxial ZnSe and CdMnTe thin films measured by microwave contactless method. Zongxin Wang, Youling Chu, Zhen Ling, Caixia Jin, Jie Wang, Xiaoyuan Hou, and Xun Wang J.Appl.Phys.82, 477(1997)
A photovoltaic study of ZnSe/GaAs heterostructures. J.B.Wang, D.Y.Chen, C.Y.Jin, F.Lu, H.H.Sun, and X.Wang Phys. Rev. B56, 1416(1997)
Structural and optical properties of Zn1-xMgxSe alloys grown on GaAs(001) substrates by molecular beam epitaxy Daming Huang, Xingjun Wang, Yanfeng Wei, Xiaohan Liu, Jie Wang, Xun Wang,Zhanghai Chen, Wei Lu. J. Cryst. Growth 184/185, 1085 (1998).
High efficient biexciton photoluminescence observed from single ZnCdSe quantum wells with continuous wave cold carrier generation Y. Wei, D. Huang, X. J. Wang, G. Yu, C. S. Zhu, and X.Wang Appl. Phys. Lett. 74, 1138 (1999).
(2) Mn/GaAs
Magnetic ordering of Mn overlayer on GaAs(100). X.Jin, M.Zhang, G.S.Dong, Y.Chen, M.Xu, X.G.Zhu, Xun Wang, E.D.Lu, H.B.Fan, P.S.Xu, X.Y.Zhang, and C.Y.Fan Phys. Rev. B50, 8047(1994).
Stabilization of fcc Mn films via epitaxial growth on GaAs(001). X.Jin, M.Zhang, G.S.Dong, M.Xu, Y.Chen, Xun Wang, X.G.Zhu, and X.L.Shen Appl. Phys. Lett. 65, 3078 (1994).
Synchrotron-radiation study of the electronic structure of fcc Mn thin films grown on a GaAs(001) surface. X.Jin, Y.Chen, G.S.Dong, M.Zhang, M.Xu, X.G.Zhu, Xun Wang, E.D.Lu, H.B.Pan, P.S.Xu, X.Y.Zhang, and C.Y.Fan Phys. Rev. B51, 9702 (1995).
XPS study of Mn thin films grown on GaAs(001) surfaces. G.S.Dong, M.Xu, Y.Chen, X.F.Jin and X.Wang Surf. Interface Anal. 24, 653 (1996).
Interface structure of fcc Mn on GaAs(001). X.Jin, Y.Chen, Y.Chen, X.W.Lin, G.S.Dong, Y.Chen, M.Xu, W.R.Zhu, Xun Wang, X.L.Shen, L.Li Appl. Phys. Lett. 70, 2455 (1997).
(3)
Interface composition studies of thermally oxidized GaAs using Auger depth profiling Xun Wang, Arturo Reyes-Mena, and David Lichtman J. Electrochem. Soc. 129, 851 (1982).
Determination of the atomic concentration rario on InP(100) clean surfaces by x-ray photoelectron spectroscopy. Yu Mingren, Yang Guang, and Wang Xun Chinese Physics, 4, 10 (1984).
The UPS study of GaAs(100) surface (4X1) structure. Xu Yabuo, Dong Guosheng, Ding Xunmin, Yang Shu, and Wang Xun Chinese Physics, 4, 547 (1984).
Experimantal observation of optical surface phonons for GaAs(100) and InP(100) surfaces. Ding Xunmin, Dong Guosheng, Yang Shu, Wang Xun, and Xu Yabuo Chinese Physics, 4, 186 (1984).
Work function change of hydrigen chemisorbed Si(100) surface. Chen Binglai, Zhuang Chenqun, and Wang Xun Chinese Physics, 4, 189 (1984).
The effect of sodium adlayers on the adsorption of oxygen on Ag(100). Eric Garfunkel, Ding Xunmin, Dong Guosheng, Yang Shu, Hou Xiaoyuan, and Wang Xun Chinese Phys. Lett. 2, 397 (1985).
An interfacial analysis of MoNb-GaAs Schottky barrier diodes. Yu Mingren, Zhu Furong, and Wang Xun Chinese Physics, 5, 1040 (1985).
Faceted structures studied by low energy electron diffraction--its application to III-V compound semiconductors. Chen Ping, Hou Xiaoyuan, Ding Xunmin, Dong Guosheng, Yang Shu, and Wang Xun Chinese Physics, 6, 755 (1986).
The adsorption of water on clean andoxygen-covered Ag(100) studied by high resolution electron energy loss spectroscopy. Xunming Ding, Eric Garfunkel, Guosheng Dong, Shu Yang, Xiaoyuan Hou, and Xun Wang J. Vac. Sci. Technol. A4,1468 (1986).
A study of the existence of a dihydride phase on a hydrogen-chemisorbed Si(111) surface. Hu Jihuang, Liu Guohui, and Wang Xun Chinese Physics, 7, 382 (1987).
Experimental evidence for indium island formation on clean InAs(111) and InSb(111) surfaces. Hou Xiaoyuan, Yu Mingren, and Wang Xun Chinese Physics, 7, 854 (1987).
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