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Z. Jiang, X. Jiang, W. Liu and Z. Wu *Thermal stability of multilayer films Pt/Si, W/Si, Mo/Si and W/C J. Appl. Phys. 65, 196(1989)
Z. Jiang, C. Gao and Z. Wu X-ray diffraction of superlattice with fluctuation and systematic deviation of period Proceeding of 12th International Congress on X-ray Optics and Microanalysis, 28 Aug.-1 Sept., 1989, Cracow, Poland, page 123(1989)
C. Gao, Z. Jiang, and Z. Wu X-ray diffraction of multilayers with a systematic deviation of period J. Appl. Phys. 68, 874(1990)
P. Fontana, P. Podini, Z. Jiang and W. Liu *Temperature dependence of resistivity in Cu/Ti superlattice Phys. Rev. B 42, 5859(1990)
M.P. Fontana, G. Antonioli, Z. Jiang and A.S. Angeloni Raman scattering in polymer liquid crystals Mol. Cryst. Liq. Cryst. 207, 151(1991)
J. M. Broto, A. Sdaq, A. Audouard, J.C. Ousset, H. Rakoto, S. Askenazy, B. Vidal and Z. Jiang High field magnetoresistance of sputtered W/C multilayers Physica B 177, 421(1992)
M. Maaza, Z. Jiang, F. Samuel, B. Farnoux and B. Vidal Improvement of neutron refectivity of an Ni-Ti multilayer by hyhrogenation of titanium layer J. Appl. Crystallogr. 25, pt 6, 789(1992)
Z. Jiang, V. Dupuis, B. Vidal, M. Piecuch and M.F. Ravet *Improvement of thermal stability of W/C multilayers J. Appl. Phys. 72, 931(1992)
B. Vidal, Z. Jiang and F. Samuel Reflectivity improvement for neutron mirrors and supermirrors Proceeding of SPIE, Neutron optical devices and application, 19-24 July 1992, San Diego, USA, Vol.1738, page 30(1992)
Z. Jiang, B. Vidal, M. Brunel, M. Maaza and F. Samuel Characterization of neutron mirrors and supermirrors using X-ray and neutron measurement Proceeding of SPIE, Neutron optical device and application, 19-24 July 1992, San Diego, USA, Vol.1738, page 141(1992)
Z. Jiang, B. Vidal, G. Desrousseaux, V. Dupuis, M. Piecuch and M. F. Ravet Graphitization of carbon in multilayers W/C Proceeding of XIII the internatinal conference on Raman spectroscopy, 31 August-4 September 1992, Wurzburge Germany, Page 996 (1992)
A. Sdaq, J. M. Broto, H. Rakoto, J. C. Ousset, B. Raquet, B. Vidal and Z. Jiang, J.F. Bobo, M. Piecuch and B. Baylac Magnetic and transport properties of Ni/Ti and Co/Cu multilayer at high fields J. Magn. Magn. Mater.121, 409(1993)
Z. Jiang, B. Vidal, G. Desrousseaux, V. Dupuis, M. Piecuch and M. F. Ravet Raman scattering from carbon in tungsten/carbon multilayer films J. Appl. Phys.74, 249 (1993)
G. Desrousseaux, A. Carlan, Z. Jiang Sticking coefficent variation during condesations of silcon and glod on films J. Phys. II, At. Mol. Cluster. Phys. Chem. Phys. Mech.Hydrodyn. 3,1461(1993)
Y.Yang, X.L. Lu, D. Huang, X.J. Chen, Z. Jiang, Y. Fan, D. Gong, G. Zhao, and X. Wang Photoluminesence from strained SiGe/Si quantum well structure grown by Si molecular beam epitaxy SPIE 2364, page 412-416(1994)
X.J. Chen, Q.H. Wang, D.W. Dong, Y. Yang, H.Q. Lu, Fang Lu, Y.L. Yan, X.K. Lu, Z.M. Jiang, X.J. Zhang, and Xun Wang Growth and characterization of boron delta function shaped doping layer in silicon molecular beam epitaxy SPIE 2364, page 109-113(1994)
M.J. Casanove, E. Snoech, C. Roucau, J.L. Hutchison, Z. Jiang, B. Vidal Fine structure of sputtered Ni/Ti multilayered thin films studied by HREM MRS Symp. Proc. 343, 277(1994)
Liwen Wu, Zuimin Jiang, Wenhan Liu, Shuyuan Zhang, Ziqin Wu Observation of systematic deviations of period in W/Si and W/C multilayers J. Appl. Phys. 78 , 5331(1995)
Xuekun Lu, Zuimin Jiang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang *Observation of boron doping induced Surface roughening in Silicon molecular beam epitaxy Appl. Phys. Lett. 68, 3278 (1996)
Xuekun Lu, Zuimin Jiang, Kaifeng Liu, Haijun Zhu, Xiangjiu Zhang, Xun Wang Co-evaporative Sb doping and crystalline quality in Si molecular beam epitaxy J. Cryst. Growth 169, 665(1996)
Xuekun Lu, Zuimin Jiang, Damin Huang, Haijun Zhu, Xiangjiu Zhang, and Xun Wang Crystalline quality of Si epilayers influenced by Sb doping J. Cryst.Growth 158, 169(1996)
X.H. Liu, D.M. Huang, Z.M. Jiang, and Xun Wang Interface broadening and Raman scattering in SiGe/Si superlattice Phys. Rev. B 53,4699(1996)
Xiaohan Liu，Daming Huang，Zuimin Jiang，Xuekun Lu，Xiangjiu Zhang and Xun Wang Photoluminescence from trapped excitons in Si1-xGex / Si quantum well structures J. Phys.: Condens. Matter 8,3947(1996)
Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Jiang Zuimin, Zhang Xiangjiu, and Wang Xun Synchrotron radiation study on structure of Sb ?-doped Si Chinese Science Bulletin 41, 559(1996)
Haijun Zhu, Zuimin Jiang, Amei Xu, Mingchun Mao, Dongzhi Hu, Xiangjiu Zhang, Xiaohan Liu, Daming Huang, Xun Wang, Jielin Sun, Minqian Li, Xiaoming Jiang Surfactant influence on the Ge heteroepilayer on Si(001) studied by X-ray diffraction and atomic force microscopy J. Cryst. Growth 179,115(1997)
Jiang Zuimin, Xiu Lisong, Jiang Xiaoming, Zheng Wenli, Lu Xuekun, Zhu Haijun, Zhang Xiangjiu, Wang Xun Extremely narrow Sb Delta-doped Epitaxial layer Characterized by X-ray reflectivity Chin. Phys. Lett. 14, 686 (1997)
Xun Wang, Zuimin Jiang, Haijun Zhu, Fang Lu, Daming Huang, Xiaohan Liu, Changwu Hu, Yifan Chen, Ziqiang Zhu and Takafumi Yao *Germanium dots with highly uniform size distribution growtn on the Si(001) substrate by molecular beam epitaxy Appl. Phys. Lett. 71, 3543 (1997)
Zuimin Jiang, H.J. Zhu, F. Lu, D.M. Huang, Xun Wang, Y.F, Chen, Z.Q. Zhu and Takafumi A silicon-based low dimensional quantum structure-self assembly grown Ge quantum dots Nonlinear Optics 18, 73(1997)
J.M. Broto, J.C. Ousset, H. Rakoto, B. Vidal, Z. Jiang, A. Sdaq, A. Khmou Transport-properties of sputtered W/C multilayers in high fields J. Appl. Phys. 81, 1820(1997)
Zhu Haijun, Jiang Zuimin, Xu Amei, Mao Mingchun, Hu Dongzhi, Liu Xiaohan, Huang Daming, Lu Fang, Hu Changwu, and Kasuya Atsuo Self-organized Ge quantum dots and its photoluminescence properties Progress in Natural Science 8, 113(1998)
Zuimin Jiang, Amei Xu, Haijun Zhu, Xiaohan Liu, Dongzhi Hu, Xingjun Wang, Mingchun Mao, Xiangjiu Zhang, Jihuang Hu, Daming Huang, Xun Wang *Effect of Sb as a surfactant on the inner diffusion of epilayer Ge atoms into Si substrate Thin Solid Films 321, 116(1998)
Z.M. Jiang, Xun Wang, H.J. Zhu, F. Lu, D.M. Huang, Y.F. Chen, Z.Q. Zhu and T.Yao *Self-organized Ge quantum dots grown by MBE on Si(001) Thin Solid Films 321, 60(1998)
H.J. Zhu, Z.M. Jiang, F.Lu, and Xun Wang Self-organized Germaniu quantum dots grown by molecular beam epitaxy on silicon Proc. of 8th Intern. Conf. on Narrow Gap Semiconductors, page 436(1998)
S.K. Zhang, H.J. Zhu, F. Lu, Z.M. Jiang, and Xun Wang *Coulomb charging effect in a self-assembled Ge quantum dots studied by Admittance spectroscopy Phys. Rev. Lett. 80,3340(1998)
Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Jie Qin, and Xun Wang Monolithic integration of GeSi/Si modulator and multiple quantum well photodetector for 1.55um operation Appl. Phys. Lett. 73,3504(1998)
Z.M. Jiang, C.W. Pei, L.S. Liao, X.F. Zhou, X.J. Zhang, Xun Wang Q.J. Jia, X.M. Jiang, Z.H. Ma, Terry Simith, I.K. Sou Thin Solid Films 336, 236(1998) Strong surface segregation of Sb atoms at low temperatures during Si molecular beam epitaxy
S.K. Zhang, Z.M. Jiang, J. Qin, D.Z. Hu, F. Lu, X. Wang Well depth fluctuation of Si1-xGex/Si quantum well structures studied by conductance-voltage technique J. Appl. Phys. 83, 5587(1998)
Q.J. Jia, W.L. Zheng, Z.G. Wang, X.M. Jiang, Z.M. Jiang, C.W. Pei, J. Qin, D.Z.Hu The distribution of Sb atoms in delta-doped silicon crystal Acta Physica Sinica (Overseas Edition) 7,695 (1998)
S.K. Zhang, Z.M. Jiang, H.J. Zhu, F. Lu Measurements of confined energy levels and Coulomb charging effect in self-assembled Ge quantum dots by admittance spectroscopy MRS Symp. Proc.533 , 191(1998)
Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang , Jie Qin, and Xun Wang Low loss 1x2 multimode interference wavelength demultiplexer in silicon-germanium alloy IEEE Photonics Technol. Lett. 11, 575 (1999)
Baojun Li, Zuimin Jiang, Chengwen Pei, Jie Qin, Xun Wang, Guozheng Li, Jianjun Wan, and Enke Liu *Integration of wavelength signal divider and infrared photodetectors based on plasma dispersion effect in SiGe/Si Appl. Phy. Lett. 74, 1663 (1999)
Baojun Li, Zuimin Jiang, Xiangjiu Zhang, Xun Wang *SiGe/Si Mach-Zehnder interferometer modulator based on plasma dispersion effect Appl. Phy. Lett. 74, 2108 (1999)
Jun Wan, Z.M. Jiang, D.W. Gong, Y.L. Fan, C. Sheng and Xun Wang, Q.J.Jia , W.Zheng, X.M.Jiang X-ray reflectivity measurement of delta-doped erbium profile in silicon MBE layer Phys. Rev. B 59, 10697(1999)
Z.H. Xiong, S. Yuan, Z.M. Jiang, J. Qin, L.S. Liao, X.M. Ding, X.Y. Hou, Xun Wang Photoluminescence studies of porous silicon microcavities J. Lumin. 80, 137(1999)
Baojun Li, Guozheng Li, Enke Liu, Zuimin Jiang, Chengwen Pei, Xun Wang 1.5?m reflection-type optical waveguide switch based on plasma dispersion effect in SiGe/Si Appl. Phy. Lett. 75, 1(1999)
F. Lu, S.K. Zhang, Z.M. Jiang, J. Qin, D.Z. Hu, X. Wang Conductance-voltage characteristics of SiGe/Si quantum well structures J. Korean Phys. Society 34, S73(1999)
Z.M. Jiang, C.W. Pei, X.F. Zhou, W.R. Jiang, B. Shi, X.H. Liu, Xun Wang, Q.J. Jia, W.L. Zheng, X.M. Jiang *Study of strain in partially relaxed Ge epilayers on Si(100) substrate Appl. Phy. Lett. 75, 370(1999)
Xiaomimg Jiang, Quanjie Jia, Zuimin Jiang, and Atsuo Iida Depth profile od delta-doped semiconductors by x-ray reflection technique Jpn. J. Appl. Phys. 38, Suppl. 38-1, 261(1999)
X.Z. Liao, J. Zou, D.J. Cockayne, J. Qin, Z.M. Jiang, Xun Wang, R. Leon *Alloying effects in Ge islands grown (100)Si Phys. Rev. B 60, 15605(1999)
Xingfei Zhou, Bin Shi, Zuimin Jiang, Weirong Jiang, Dongzhi Hu, Dawei Gong, Yongliang Fan, Xiangjiu Zhang, Xun Wang, Yuesheng Li Boron-mediated growth of Ge quantum dots on Si(100) substrate Thin Solid Film 369, 92(2000)
X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang, X. Wang, R. Leon *Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands Appl. Phys. Lett. 77, 1304(2000)
Z. M. Jiang, X. M. Jiang, W. R. Jiang, Q. J. Jia, W. L. Zheng, and Q. C. Qia *Lattice strain and composition of self-organized Ge dots grown on Si(001) Appl. Phys. Lett. 76, 3397(2000)
S. K. Zhang, Fang Lu, Z. M. Jiang, Xun Wang Coulomb Charging effcet of holes in Ge quantum dots studied by deep level transient Spectroscopy Thin Solid Film 369, 65(2000)
B. J. Li, J. J. Wan, G. Z. Li, Z. M. Jiang, En K. Liu, X. Wang Y-branch 1.3/1.55μm wavelength demultiplexer based on the plasma dispersion effect Thin Solid Films 369 , 419 (2000)
W. R. Jiang, Z. M. Jiang, B. Shi, H. Xiong, D. Z. Hu, D. W. Gong, and Y. L. Fan Strains in Si substrate induced by formation of Ge islands SPIE 4086, 108(2000)
W. R. Jiang, J. Qin, D. Z. Hu, H. Xiong, and Z. M. Jiang A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100) J. Crystal Growth 227, 1106(2001)
H. Xiong, X. J. Zhang, Z. M. Jiang, J. H. Hu, B. Shi, X. F. Zhou, W. R. Jiang, D. Z. Hu, and Y. L. Fan Strain relaxation and misfit dislocation in SiGe epilayers grown in micron size windows by MBE J. Crystal Growth 233, 74 (2001)
X. Jiang, Z. Jiang, W. Jiang, Q. Jia, W. Zheng, D. Xian, and X. Wang Study of strain and composition of the self-organized ge dots by grazing incident x-ray diffraction Nucl. Instum. Methods A 467, 362(2001)
J. Wan, Y. H. Luo, Z. M. Jiang, G. L. Jin, J. L. Liu, K. L. Wang, X. Z. Liao, and J.Zou Ge/Si interdiffusion in the GeSi dots and wetting layers J. Appl. Phys. 90, 4290(2001)
J. Wan, G. L. Jin, Z. M. Jiang, Y. H. Luo, J. L. Liu and K. L. Wang *Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001) Appl. Phys. Lett. 78, 1763(2001)
X. Z. Liao, J. Zou, D. J. H. Cockayne, Z. M. Jiang and X. Wang *Extracting composition and alloying information of coherent Ge(Si)/Si(001) islands from [001] on-zone bright-field diffraction contrast images J. Appl. Phys. 90, 2725(2001)
B. Shi, Z. M. Jiang, and X. Wang *Defective photonic crystals with greatly enhanced second-harmonic generation Opt. Lett. 26, 1194(2001)
J. Wan, Y. H. Luo, Z. M. Jiang, G. L. Jin, J. L. Liu, K. L. Wang, X. Z. Liao, and J. Zou *Effects of interdiffusion on the band alignment of GeSi dots Appl. Phys. Lett. 79, 1980(2001)
X. Z. Liao, J. Zou, D. J. H. Cockayne, J. Wan, Z. M. Jiang, G. Jin, and K. L. Wang *Annealing effects on the microstructure of Ge/Si(001) quantum dots Appl. Phys. Lett. 79, 1258(2001)
Z. M. Jiang, B. Shi, D. T. Zhao, J. Liu, X. Wang *Silicon-based photonic crystal heterostructure Appl. Phys. Lett. 79, 3395(2001)
X. Z. Liao, J. Zou, D. J. H. Cockayna, J. Wan, Z. M. Jiang, G. Jin, K. L. Wang *Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots Phys. Rev. B 65, 153306(2002)
B. Shi, Z. M. Jiang, X. F. Zhou, X. Wang *A two-dimensional nonlinear photonic crystals for strong second harmonic generation J. Appl. Phys. 91, part 1, 6769(2002)
D. T. Zhao, B. Shi, Z. M. Jiang, Y. L. Fan, X. Wang Silicon-based optical waveguide polarizer using photonic band gap Appl. Phys. Lett. 81, 409(2002)
J. L. Liu, J. Wan, Z. M. Jiang, A. Khitun, K. L. Wang, D. P. Yu *Optical phonons in self-assembled Ge quantum dot superlattices: strain relaxation effects J. Appl. Phys. 92, 6804(2002)
J. Zou, X. Z. Liao, D. J. H. Cockayna, Z. M. Jiang Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si(001) island growth Appl. Phys. Lett. 81, 1996(2002)
D. Z. Hu, D. T. Zhao, W. R. Jiang, B. Shi, Y. L. Fan, Z. M. Jiang Growth of Ge quantum dots on vicinal Si(001) substrate By solid phase epitaxy J. Crystal Growth 236, 557(2002)
H. Zhou, S. H. Huang, Y. Rao, Z. M. Jiang, and F. Lu Quantum levels in Ge quantum dots studied by photocurrent spectroscopy and admittance spectroscopy Solid State Communications 125, 161(2003)
S. H. Huang, H. Zhou, Z. M. Jiang, and F. Lu Electric field dependence of photocurrent absorption in GeSi/Si quantum wells Microelectronic Engineering 66, 136(2003)
X. Jiang, T. H. Metzger, M. Sztucki, Z. Jiang, W. Jiang, D. Xian Influences of Si spacer layers on the structures of Ge/Si quantum dot bilayers Nucl. Instrum. Meth. B 200, 40(2003)
J. Cui, Q. He, X. M. Jiang, Y. L. Fan, X. J. Yang, F. Xue, and Z. M. Jiang *Self-assembled SiGe quantum rings grown on Si(001) by molecular beam epitaxy Appl. Phys. Lett. 83, 2907(2003)
Y. Rao, Q. Cao, Z. M. Jiang, Fang Lu Coupling effect dependent on the thickness of the spacer layer between double layers of quantum dots Appl. Surf. Science 224, 160-164(2004)
Z. J. Yan, R. Xu, Y. Y. Wang, S. Chen, Y. L. Fan, and Z. M. Jiang *Thin HfO2 films grown on Si(100) by atomic oxygen assisted molecular beam epitaxy Appl. Phys. Lett. 85, 85(2004)
J. Qin, F. Xue, Y. Wang, L. H. Bai, J. Cui, X. J. Yang, Y. L. Fan, and Z. M. Jiang Phosphorus-mediated growth of Ge quantum dots on Si(001) J. Crystal Growth 278, 136(2005)
J. Qin, F. Xue, L. Huang, Y. L. Fan, X. J. Yang, and Z. M. Jiang, Q. J. Jia, X. M. Jiang An investigation of phosphorus surface segregation by X-ray measurements Surface Science 580, 51(2005)
R. Xu, Z.J. Yan, S. Chen, Y.L. Fan, X.M. Ding, Z.M. Jiang, and Z.S. Li In situ photoemission study on initial growth of HfO2 films on Si(100) Surface Science 581, 236(2005)
R. Xu, Y.Y. Zhu, S. Chen, F. Xue, Y.L. Fan, X.J. Yang, and Z.M. Jiang *Epitaxial growth of Er2O3 films on Si(001) J. Crystal Growth 277, 496(2005)
S. H. Huang, H. Zhou, Z. M. Jiang, Fang Lu The study of ultrafast phase dynamics of carriers in Ge quantum dots Photocurrent correlation phase spectroscopy Nanotechnology 16, 53(2005)
Chen S, Zhu Y Y, Xu R, Wu YQ, Zou J, Yang XJ, Fan YL, Lu F, Jiang ZM and Zou J. *Superior Electrical Properties of Crystalline Er2O3 films Applied Physics Letters 88，222902(2006)
Zhu YY, Chen S, Xu R, Fang ZB, Zhao JF, Fan YL, Yang XJ and Jiang ZM *Band offsets of Er2O3 films epitaxially grown on Si substrate Applied Physics Letters 88，162909(2006)
F. H. Li, Y. L. Fan, X. J. Yang, Z. M. Jiang, Y. Q. Wu and J. Zou Atomic composition profile change of SiGe islands during Si capping Applied Physics Letters 89, 103108(2006)
F. Y. Yuan, Z. M. Jiang and F. Lu Study of coupling effect in double-layer quantum dots by admittance spectroscopy Applied Physics Letters 89, 072112(2006)
R. Wu, F. H. Li, Z. M. Jiang, X. J. Yang Effects of a native oxide layer on the conductive atomic force microscopy measurements of self-assembled Ge quantum dots Nanotechnology 17, 5111 (2006)
Y. Y. Zhu, R. Xu, S. Chen, Z. B. Fang, F. Xue, Y. L. Fan, X. J. Yang and Z.M. Jiang Epitaxial growth of Er2O3 films on oxidized Si (111) and Si (001) substrates Thin Solid Films 508, 86 (2006)
H. B. Yang , X. J. Zhang, Z. M. Jiang, X. D. Lu, L. H. Bai, X. J. Yang,Y. L. Fan, D. Z. Hu, Y. Q. Sun, W. N. Huang The influence of the edge effect of the mask on the strain and the morphology of SiGe film grown at the patterned Si substrate by molecular beam epitaxy Thin Solid Films 514, 344 (2006)
X. S. Cai, J. Qin, H B Yang, Y F Yuan, F. Lu, Y. L. Fan, and Z. M. Jiang Energy levels in doped SiGe quantum well studied by admittance spectroscopy Applied Surface Science 252, 2776 (2006)
Wu YQ, Zou J*, Li FH, Cui J, Lin JH, Wu R, Jiang ZM The stability of faceted SiGe quantum dots capped with a thin Si layer Nanotechnology 18, Art. No. 025404 (2007)
Qin J, Li FH, Wu YQ, Yang HB, Fan YL, Jiang ZM Mechanism for coarsening of P-mediated Ge quantum dots during in situ annealing Surface Science 601, 941 (2007)
Li F H, Tao Z S, Qin J, Wu Y Q, Zou J, Lu F, Fan Y L, Yang X J and Jiang Z M Shape preservation of self-assembled SiGe quantum rings during Si capping Nanotechnology 18, 115708 (2007)
Fang Z B, Chen S, Zhu Y Y, Wu Y Q, Fan Y L, Wang Y Y and Jiang Z M Structural and electrical characterization of ultrathin Er2O3 films grown on Si(001) by reactive evaporation Nanotechnology 18, 155205 (2007)
Chen S, Zhu Y Y, Wu R, Wu Y Q, Fan Y L and Jiang Z M Thermal stability of Er2O3 thin films grown epitaxially on Si substrates J. Appl. Phys. 101, 064106 (2007)
Lin J H, Yang H B, Qin J, Zhang B, Fan Y L, Yang X J and Jiang Z M Strain analysis of Ge/Si(001) islands after initial Si capping by Raman spectroscopy J. Appl. Phys. 101, 083528 (2007)
Zhu Y Y, Fang Z B, Chen S, Liao C, Wu Y Q, Fan Y L and Jiang Z M *Fowler-Nordheim hole tunneling in metal-Er2O3-silicon structures, Appl. Phys. Lett. 91, 122914 (2007)
Zhong Z Y, Chen P X, Jiang Z M and Bauer G, *Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates Appl. Phys. Lett. 93 043106 (2008)
Yang H B, Tao Z S, Lin J H, Lu F, Jiang Z M and Zhong Z Y *Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer Appl. Phys. Lett. 92 111907 (2008)
Su W F, Gnaser H, Fan Y L, Jiang Z M and Le Y K Compositional and structural evolution of the titanium dioxide formation by thermal oxidation Chinese. Phys. B 17 3003 (2008)
Fang Z B, Tan Y S, Zhu Y Y, Chen S and Jiang Z M Structural characteristics of amorphous Er2O3 films grown on Si(001) by reactive evaporation J. Inorg. Mater. 23, 357 (2008)
Xiong F, Zhang H, Jiang Z M and Zhang P X Transverse laser-induced thermoelectric voltages in tilted La2-xSrxCuO4 thin films J. Appl. Phys. 104, 053118 (2008)
Xiong F, Zhang H, Li H S, Zhang P X and Jiang Z M Influence of annealing oxygen pressure on the laser-induced thermoelectric voltage effect in YBa2Cu3O7-x thin films Acta Phys. Sin-ch. Ed. 57, 5237 (2008)
Liu W, Zhang D H, Fan W J, Hou X Y and Jiang Z M Intersubband transitions in InGaAsN/GaAs quantum wells J. Appl. Phys. 104, 053119 (2008)
Yang H B, Zhang X J, Jiang Z M, Yang X J and Fan Y L SiGe quantum dot molecules grown on patterned Si (001) substrates J. Appl. Phys. 104, 044303 (2008)
Wu R, Lin J H, Zhang S L, Yang H B, Jiang Z M and Yang X J Transient Hole Trapping in Individual GeSi Quantum Dot Grown on Si(001) Studied by Conductive Atomic Force Microscopy Chinese. Phys. Lett. 25, 4360 (2008)
Lin J H, Wu Y Q, Tang S, Fan Y L, Yang X J, Jiang Z M and Zou J Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM J. Nanosci. Nanotechnol. 9, 2753 (2009)
Wang J L, Su W F, Xu R, Fan Y L and Jiang Z M *Investigation on microstructures of MnSix thin films by Raman spectroscopy J. Raman. Spectrosc. 40, 335 (2009)
Su W F, Gong L, Wang J L, Chen S, Fan Y L and Jiang Z M Group-IV-diluted magnetic semiconductor FexSi1-x thin films grown by molecular beam epitaxy J. Cryst. Growth 311, 2139 (2009)
Lin J H, Wu Y Q, Cui J, Fan Y L, Yang X J, Jiang Z M, Chen Y and Zou J Formation of planar defects over GeSi islands in Si capping layer grown at low temperature, J. Appl. Phys. 105,(2009)
Zhou X F, Jiang Z M, Lin J H, Tang X D, Chen Q M, Zhang H and Zhang P X Thermoelectric signals from Si/SiGe superlattices J. Phys. D. Appl. Phys. 42,(2009)
Zhu P L, Xue F, Liu Z, Fan Y L, Jiang Z M and Yang X J Influence of annealing atmosphere on the magnetic properties of SiO2/Fe/SiO2 sandwiched nanocomposite films J. Appl. Phys. 106, 4 (2009)
Fang Z B, Zhu Y Y, Wang J L and Jiang Z M Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films Chinese. Phys. B 18, 3542 (2009)
Lou H N, Wang X, Tao Z S, Lu F, Jiang Z M, Mai L L and Xu F Temperature-dependent photoluminescence spectra of Er-Tm-codoped Al2O3 thin film Appl. Surf. Sci. 255, 8217 (2009)
Cai Q J, Chen P X, Zhong Z Y, Jiang Z M, Lu F and An Z H Circularly organized quantum dot nanostructures of Ge on Si substrates Semicond. Sci. Tech. 24,(2009)
Zhang S L, Xue F, Wu R, Cui J, Jiang Z M and Yang X J Conductive atomic force microscopy studies on the transformation of GeSi quantum dots to quantum rings Nanotechnology 20, 13 (2009)
Zhang H Y, Yuan H, Zhang B, Zhong Z Y, Fan Y L, Lu F and Jiang Z M Hole transport in one-dimensional aligned GeSi quantum dots at low temperatures J. Phys. D. Appl. Phys. 42, 20 (2009)
Chen Y W, Pan B Y, Nie T X, Chen P X, Lu F, Jiang Z M and Zhong Z Y Enhanced photoluminescence due to lateral ordering of GeSi quantum dots on patterned Si(001) substrates Nanotechnology 21, 17 (2010)
Nie T-X, Chen Z-G, Wu Y-Q, Wang J-L, Zhang J-Z, Fan Y-L, Yang X-J, Jiang Z-M and Zou J Metallic and Ionic Fe Induced Growth of Si?SiOx Core?Shell Nanowires J. Phys. Chem. C 114, 15370 (2010)
Shaughnessy M, Fong C Y, Snow R, Yang L H, Chen X S and Jiang Z M Structural and magnetic properties of single dopants of Mn and Fe for Si-based spintronic materials Phys. Rev. B 82, 035202 (2010)
Cui J, Lin JH, Wu YQ, Fan YL, Zhong ZY, Yang XJ, Jiang ZM Formation of Nanopits in Si Capping Layers on SiGe Quantum Dots NANOSCALE RESEARCH LETTERS 6, 59(2011)
Ji T, Cui J, Fang ZB, Nie TX, Fan YL, Li XL, He Q, Jiang ZM Single crystalline Tm(2)O(3) films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy J. Cryst. Growth 321, 171 (2011)
Ma YJ, Cui J, Fan YL, Zhong ZY, Jiang ZM Ordered GeSi nanorings grown on patterned Si (001) substrates NANOSCALE RESEARCH LETTERS 6, 205(2011)
Cui J， Lv. Y , Yang X J, Fan Y L, Zhong Z and Jiang ZM Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy Nanotechnology 22, 125601 (2011)
Nie TX , Chen, ZG, Wu YQ, Lin JH , Zhang JZ, Fan YL, Yang XJ, Jiang ZM, Zou J Amorphous SiO(x) nanowires catalyzed by metallic Ge for optoelectronic applications JOURNAL OF ALLOYS AND COMPOUNDS 509, 3978(2011)
Xu YQ , Su WF, Nie TX , Cui J, Shao YM Jiang ZM Hall resistivity of Fe doped Si film at low temperatures Appl. Phys. Lett. 98, 1121079(2011)
Su WF , WangJL, Zhu H, Fan YL, Jiang ZM Transport properties of a Fe(0.04)Si(0.96) film at low temperatures J. Phys. D. Appl. Phys. 44, 085401 (2011)
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