朱颢 - 复旦大学 - 微电子学院

个人简介

2023年--至今复旦大学微电子学院，教授 2016年--2022年复旦大学微电子学院，青年研究员 2011年-2016年美国国家标准与技术研究院（NIST），Guest Scientist 2013年美国George Mason University, Ph.D. in Electrical Engineering 2010年南京大学，凝聚态物理，硕士 2007年南京大学，物理学，学士

研究领域

先进CMOS器件与工艺低功耗集成电路器件与系统宽禁带半导体材料与功率器件智能传感器件与系统设计

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

X. Zhu, T. Zhang, Y. He, Y. Liu*, H. Zhu*, Carriertuning of 2D electron gas in field-effect devices based on Al2O3/ZnO heterostructures, Nanoscale 15, 12071 (2023). H. Xu, J. Wang, H. Xu, Y. Gu, H. Zhu*, Q. Sun, D. W. Zhang, Impact Study of Layout-Dependent Effects Toward FinFET Combinational Standard Cell Optimization, IEEE Transactions on Circuits and Systems – II: Express Briefs 70, 731 (2023). Y. Yang, K. Zhang, Y. Gu, P. Raju, Q. Li*, L. Ji, L. Chen, D. E. Ioannou, Q. Sun, D. W. Zhang, H. Zhu*, Steep-Slope Negative Quantum Capacitance Field-Effect Transistor, IEEE 68th International Electron Devices Meeting (IEDM 2022), pp. 22.6.1-pp.22.6.4 X. Chao, C. Tang, C. Wang, J. Tan, L. Ji, L. Chen, H. Zhu*, Q. Sun, D. W. Zhang, Observation and Analysis of Anomalous VTH Shift of p-GaN Gate HEMTs Under OFF-State Drain Stress, IEEE Transactions on Electron Devices 69, 6587 (2022). H. Xu, Y. Yang, J. Tan, L. Chen, H. Zhu*, Q. Sun, High-Performance Lateral Avalanche Photodiode Based on Silicon-on-Insulator Structure, IEEE Electron Device Letters 43, 1077 (2022). B. Wang, H. Li, H. Tan, Y. Gu, L. Chen, L. Ji, Z. Sun, Q. Sun*, S. Ding, D. W. Zhang, H. Zhu*, Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS2/Metal?Organic Framework Heterostructure, ACS Applied Materials & Interfaces 14, 42356 (2022). H. Xu, Y. Yang, J. Tan, H. Zhu*, Q.-Q. Sun, D. W. Zhang, Carrier Stored Trench-Gate Bipolar Transistor With Stepped Split Trench-Gate Structure, IEEE Transactions on Electron Devices 69, 5450 (2022). J. Zhang, H. Zhu*, L. Chen, Q. Sun, D. W. Zhang, Mitigating the Length of Diffusion Effect by Back-End Design-Technology Cooptimization, IEEE Transactions on Electron Devices 69, 1279 (2022). B. Ye, Y. Gu, H. Xu, C. Tang, H. Zhu*, Q. Sun, D. W. Zhang, NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology, IEEE Transactions on Electron Devices 69, 905 (2022). J. Wang, H. Zhu, Y. Yu, X. Liu, E. Feng, C. Lei, Y. Cai, H. Zhu*, Q.-Q. Sun*, D. W. Zhang, A Transistor-Level DFF Based on FinFET Technology for Low Power Integrated Circuits, IEEE Transactions on Circuits and Systems – II: Express Briefs 69, 584 (2022). H. Zhu*, B. Ye, C. Tang, X. Li, Q. Sun*, D. W. Zhang, Improving Low-Frequency Noise in 14-nm FinFET by Optimized High-k/Metal Gate Thermal Processing, IEEE Electron Device Letters 42, 1112 (2021).