陈琳 - 复旦大学 - 微电子学院

个人简介

教育背景复旦大学，微电子学与固体电子学，博士研究生学术经历 2019年11月-至今复旦大学微电子学院，教授 2014年10月-2019年11月复旦大学微电子学院，副研究员 2012年07月-2014年08月荷兰皇家飞利浦公司，研发经理 2010年07月-2010年11月德国弗劳恩霍夫研究所，访问学者荣誉称号 2021，国家重大人才工程“青年学者” 2021，复旦大学“五四奖章” 2020，复旦大学卓越2025人才 2020，上海市科学技术奖二等奖（2） 2019，上海市科技启明星 2016，上海市高校青年科研骨干培养“晨光计划”

研究领域

集成电路新原理器件设计与先进CMOS工艺新型存储器件与存算一体技术柔性电子器件与可穿戴技术集成电路先进互连与三维集成技术

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

J. Meng, T. Wang, H. Zhu, L. Ji, W. Bao, P. Zhou, L. Chen（陈琳）, Q.-Q. Sun, and D. W. Zhang, “Integrated In-Sensor Computing Optoelectronic Device for Environment-Adaptable Artificial Retina Perception Application,” Nano Letters, 2021. C. Wang, H. Liu, L. Chen（陈琳）, H. Zhu, L. Ji, Q.-Q. Sun, and D. W. Zhang, “Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application,” Ieee Electron Device Letters, vol. 42, no. 10, pp. 1555-1558, Oct, 2021. Y. Liu, Y. Cao, H. Zhu, L. Ji, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “HfZrOx-Based Ferroelectric Tunnel Junction With Crested Symmetric Band Structure Engineering,” Ieee Electron Device Letters, vol. 42, no. 9, pp. 1311-1314, Sep, 2021. Z.-Y. He, T.-Y. Wang, J.-L. Meng, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “CMOS back-end compatible memristors for in situ digital and neuromorphic computing applications,” Materials Horizons, vol. 8, no. 12, pp. 3345-3355, Nov 29, 2021. T.-Y. Wang, J.-L. Meng, Q.-X. Li, Z.-Y. He, H. Zhu, L. Ji, Q.-Q. Sun, L. Chen（陈琳）, and D. W. Zhang, “Reconfigurable optoelectronic memristor for in-sensor computing applications,” Nano Energy, vol. 89, Nov, 2021. J. L. Meng, T. Y. Wang, Z. Y. He, L. Chen（陈琳）, H. Zhu, L. Ji, Q. Q. Sun, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications,” Materials Horizons, vol. 8, no. 2, pp. 538-546, Feb, 2021. J. L. Meng, T. Y. Wang, L. Chen（陈琳）, Q. Q. Sun, H. Zhu, L. Ji, S. J. Ding, W. Z. Bao, P. Zhou, and D. W. Zhang, “Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application,” Nano Energy, vol. 83, May, 2021. X. Xu, X. Zhou, T. Wang, X. Shi, Y. Liu, Y. Zuo, L. Xu, M. Wang, X. Hu, X. Yang, J. Chen, X. Yang, L. Chen（陈琳）, P. Chen, and H. Peng, “Robust DNA-Bridged Memristor for Textile Chips,” Angewandte Chemie-International Edition, vol. 59, no. 31, pp. 12762-12768, Jul 27, 2020. Y. Wang, Y. Yang, Z. He, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “Laterally Coupled 2D MoS2 Synaptic Transistor With Ion Gating,” Ieee Electron Device Letters, vol. 41, no. 9, pp. 1424-1427, Sept, 2020. T.-Y. Wang, J.-L. Meng, M.-Y. Rao, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, W.-Z. Bao, P. Zhou, and D. W. Zhang, “Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application,” Nano Letters, vol. 20, no. 6, pp. 4111-4120, Jun 10, 2020. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning,” Nanoscale, vol. 12, no. 16, pp. 9116-9123, Apr 28, 2020. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation,” Advanced Science, vol. 7, no. 8, Apr, 2020. H. Liu, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit,” Nano Research, vol. 13, no. 6, pp. 1644-1650, Jun, 2020. Q. X. Li, T. Y. Wang, X. L. Wang, L. Chen（陈琳）, H. Zhu, X. H. Wu, Q. Q. Sun, and D. W. Zhang, “Flexible organic field-effect transistor arrays for wearable neuromorphic device applications,” Nanoscale, vol. 12, no. 45, pp. 23150-23158, Dec, 2020. Z. H. Gu, T. B. Zhang, J. L. Luo, Y. Wang, H. Liu, L. Chen（陈琳）, X. K. Liu, W. J. Yu, H. Zhu, Q. Q. Sun, and D. W. Zhang, “MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering,” Acs Applied Materials & Interfaces, vol. 12, no. 49, pp. 54972-54979, Dec, 2020. M. Zhang, H. Li, J. Xu, H. Zhu, L. Chen（陈琳）, Q. Sun, and D. W. Zhang, “High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications,” Ieee Electron Device Letters, vol. 40, no. 1, pp. 123-126, Jan, 2019. T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments,” Nanoscale Horizons, vol. 4, no. 6, pp. 1293-1301, Nov 1, 2019. L.-J. Yu, T.-Y. Wang, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Stateful Logic Operations Implemented With Graphite Resistive Switching Memory,” Ieee Electron Device Letters, vol. 39, no. 4, pp. 607-609, Apr, 2018. T.-Y. Wang, Z.-Y. He, H. Liu, L. Chen（陈琳）,H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States,” Acs Applied Materials & Interfaces, vol. 10, no. 43, pp. 37345-37352, Oct 31, 2018. S. Y. Jiang, Y. Yuan, X. Wang, L. Chen（陈琳）, H. Zhu, Q. Q. Sun, and D. W. Zhang, “A Semi-Floating Gate Transistor With Enhanced Embedded Tunneling Field-Effect Transistor,” Ieee Electron Device Letters, vol. 39, no. 10, pp. 1497-1499, Oct, 2018. L. Chen（陈琳）, T.-Y. Wang, Y.-W. Dai, M.-Y. Cha, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, L. Chua, and D. W. Zhang, “Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications,” Nanoscale, vol. 10, no. 33, pp. 15826-15833, Sep 7, 2018. J. Xu, L. Chen（陈琳）, Y.-W. Dai, Q. Cao, Q.-Q. Sun, S.-J. Ding, H. Zhu, and D. W. Zhang, “A two-dimensional semiconductor transistor with boosted gate control and sensing ability,” Science Advances, vol. 3, no. 5, May, 2017. M.-L. Shi, L. Chen（陈琳）, T.-B. Zhang, J. Xu, H. Zhu, Q.-Q. Sun, and D. W. Zhang, “Top-Down Integration of Molybdenum Disulfide Transistors with Wafer-Scale Uniformity and Layer Controllability,” Small, vol. 13, no. 35, Sep 20, 2017. Q. Cao, Y.-W. Dai, J. Xu, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, and D. W. Zhang, “Realizing Stable p-Type Transporting in Two-Dimensional WS2 Films,” Acs Applied Materials & Interfaces, vol. 9, no. 21, pp. 18215-18221, May 31, 2017. D.-T. Wang, Y.-W. Dai, J. Xu, L. Chen（陈琳）, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles,” Ieee Electron Device Letters, vol. 37, no. 7, pp. 878-881, Jul, 2016. Y.-W. Dai, L. Chen（陈琳）, W. Yang, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, D. W. Zhang, and F. Xiao, “Complementary Resistive Switching in Flexible RRAM Devices,” Ieee Electron Device Letters, vol. 35, no. 9, pp. 915-917, Sep, 2014. Q.-Q. Sun, J.-J. Gu, L. Chen（陈琳）, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity,” Ieee Electron Device Letters, vol. 32, no. 9, pp. 1167-1169, Sep, 2011. L. Chen（陈琳）, H.-Y. Gou, Q.-Q. Sun, P. Zhou, H.-L. Lu, P.-F. Wang, S.-J. Ding, and D. Zhang, “Enhancement of Resistive Switching Characteristics in Al2O3-Based RRAM With Embedded Ruthenium Nanocrystals,” Ieee Electron Device Letters, vol. 32, no. 6, pp. 794-796, Jun, 2011. L. Chen（陈琳）, Y. Xu, Q.-Q. Sun, P. Zhou, P.-F. Wang, S.-J. Ding, and D. W. Zhang, “Atomic-Layer-Deposited HfLaO-Based Resistive Switching Memories With Superior Performance,” Ieee Electron Device Letters, vol. 31, no. 11, pp. 1296-1298, Nov, 2010. L. Chen（陈琳）, Y. Xu, Q.-Q. Sun, H. Liu, J.-J. Gu, S.-J. Ding, and D. W. Zhang, “Highly Uniform Bipolar Resistive Switching With Al2O3 Buffer Layer in Robust NbAlO-Based RRAM,” Ieee Electron Device Letters, vol. 31, no. 4, pp. 356-358, Apr, 2010.