江安全 - 复旦大学 - 微电子学院

个人简介

教育背景 1994年08月-1999年06月中科院固体物理所，凝聚态物理，博士 1988年08月-1992年06月兰州大学材料科学系，材料科学，本科学术经历 2006年03月-至今复旦大学微电子学院，研究员 2001年02月－2006年02月剑桥大学地球科学系和工程系，博士后 1999年06月－2001年02月中国科院物理所和香港科大，博士后荣誉和奖励 2009/1－2015/12，上海市高校特聘教授（东方学者） 2013/1-2016/12，国家杰出青年科学基金 2015－2018，IEDM存储器分会委员和《Scientific Reports》编委

研究领域

基于CMOS工艺后端的不挥发薄膜存储器：铁电薄膜存储器（FeRAM），变阻存储器（RRAM），相变存储器(PCRAM)，非挥发闪存(FLASH)等新型纳米半导体器件的工艺和物理；高介电常数的铁电材料研制及其在微波器件上的应用铁电液晶和压电、热释电材料等

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

W. J. Zhang, C. Wang, J. Jiang, et al. Fast Operations of Nonvolatile Ferroelectric Domain Wall Memory with Inhibited Space Charge Injection. ACS Applied Materials& Interfaces. (2022). X. Zhuang, C. Wang, A. Q. Jiang, The technique to symmetrize domain switching hysteresis loops in LiNbO domain-wall nanodevices with improved polarization retention. Appl. Phys. Lett.120, 243505 (2022) J. Jiang, C. Wang, X.J. Chai, et al. Surface-Bound Domain Penetration and Large Wall Current. Adv. Electron. Mater. 7, 2000720 (2021). A.Q. Jiang, W.P. Geng, P. Lv, et al. Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers. Nat. Mater. (2020). X. Chai, J. Jiang, Q. Zhang, Q. et al. Nonvolatile ferroelectric field-effect transistors. Nat Commun.11, 2811 (2020). C. Wang, J. jiang, X.J. Chai,et al.Energy-efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics. ACS Applied Materials& Interfaces. (2020) J. Jiang, Z. L. Bai, Z. H. Chen, L. He, D. W. Zhang, Q. H. Zhang, J. A. Shi, M. H. Park, J. F. Scott, C. S. Hwang and A. Q. Jiang*, “Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories”, Nat. Mater. 17, 49-57 (2018). Z. L. Bai, X. X. Cheng, D. F. Chen, D. W. Zhang, L. Q. Chen, J. F. Scott, C. S. Hwang*, and A. Q. Jiang*, “Hierarchical Domain Structure and Extremely Large Wall Current in Epitaxial BiFeO3 Thin Films”, Adv. Funct. Mater. 18, 01725 (2018). An Quan Jiang, Xiang Jian Meng, David Wei Zhang, Min Hyuk Park, Sijung Yoo, Yu Jin Kim, James F. Scott* & Cheol Seong Hwang*, “Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong”, Scientific Reports 5, 14618 (2015). A.Q. Jiang*, H.J. Lee, C.S. Hwang, and J.F. Scott, “Sub-picosecond processes of ferroelectric domain switching from field and temperature experiments”, Adv. Funct. Mater. 22, 192–199 (2012). An Quan Jiang*, Mr. Zhi Hui Chen, Mr. Wen Yuan Hui, Prof. Dong Ping Wu, Prof. James F. Scott 'Subpicosecond Domain Switching in Discrete Regions of Pb(Zr0.35Ti0.65)O3 Thick Films ' Adv. Funct. Mater., 22, 2148–2153 (2012). A.Q. Jiang*, C. Wang , K.J. Jin , X.B. Liu , J. F. Scott , C.S. Hwang , T. A. Tang , H. B. Lu , and G. Z. Yang, “A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors”, Adv. Mater. 23, 1277–1281 (2011). A. Q. Jiang, H. J. Lee, G. H. Kim, and C.S. Hwang*, The inlaid Al2O3 tunnel switch for ultra-thin ferroelectric films, Adv. Mater. 21, 2870-2875 (2009).