丁士进 - 复旦大学 - 微电子学院

个人简介

教育背景复旦大学，微电子学与固体电子学，博士研究生学术经历 2008年04月至今复旦大学，研究员 2005年01月-2008年03月复旦大学，副研究员 2003年02月-2004年12月新加坡国立大学，研究员（Research Fellow） 2001年10月-2002年11月基尔大学（德国），德国洪堡学者（博士后）荣誉称号 2008年度教育部新世纪优秀人才支持计划，2008 （首届）浦江人才计划，2005 德国洪堡基金会研究奖学金，2001 入选第五届复旦大学“世纪之星科研培养计划” 科研获奖上海市技术发明奖二等奖

研究领域

氧化物半导体薄膜与器件电荷俘获型非易式性存储器超大规模集成电路互连材料与工艺高/超高电容密度片上电容器原子层沉积新材料及应用

近期论文

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Zheng G.; He Y.L.; Zhu B.; Wu X.H.; Zhang D.W. and Ding S.J., Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators, IEEE Transactions on Electron Devices, 2023, 70 (6), 3064-3070. He Y.L.; Zheng G.; Zhu B.; Wu X.H.; Liu W.J.; Zhang D.W. and Ding S.J., High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics, Nanomaterials, 2023, 13 (11), 1765. Xiong W.; Huo J.Y.; Wu X.H.; Liu W.J.; Zhang D.W. and Ding S.J., High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack, Chinese Physics B, 2023, 32 (1), 018503. Meng W.; Xiao D.Q.; Luo B.B.; Wu X.H.; Zhu B.; Liu W.J. and Ding S.J., Performance improvement of Hf0.45Zr0.55Ox ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InOx channels, Nanotechnology, 2023, 34 (17), 175204. Zhang T.T.; Chen Y.T.; Chu Y.L.; Ding S.J.; Liu W.J. and Wu X.H., Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection, ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (6), 2805-2814. He Y.L.; Zheng G.; Wu X.H.; Liu W.J.; Zhang D.W. and Ding S.J., Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition, Nanoscale Advances, 2022, 4, 4648. Xiao, D.Q., Luo, B.B., Huang, C.M., Xiong, W., Wu, X.H. and Ding, S.J., High Performance (Vth ~ 0 V, SS ~ 69 mV/dec, IOn/IOff ~ 10^10) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation, IEEE Transactions on Electron Devices, 2022, 69 (7), 3716-3721. Wang, X.L.; Chen, Y.T.; Chu, Y.L.; Liu, W.J.; Zhang, D.W.; Ding, S.J.; Wu, X.H., Spectrum Reconstruction with Filter-Free Photodetectors Based on Graded-Band-Gap Perovskite Quantum Dot Heterojunctions, ACS Applied Materials & Interfaces, 2022, 14 (12), 14455-14465. Chu, Y.L.; Tan, H.T.; Zhao, C.Y.; Wu, X.H.; Ding, S.J., Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions, ACS Applied Materials & Interfaces, 2022, 14 (7), 9368-9376. Pi, T.T.; Xiao, D.Q.; Yang, H.; He, G.; Wu, X.H.; Liu, W.J.; Zhang, D.W.; Ding, S.J., High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing, IEEE Transactions on Electron Devices, 2022, 69 (1), 156-159. Pei J.X.; Wu X.H.; Liu W.J.; Zhang D.W. and Ding S.J., Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots, ACS Nano, 2022, 16 (2), 2442-2451. Xiao D.Q.; Luo B.B.; Xiong W.; Wu X.H.; Zhang D.W. and Ding S.J., Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf0.45Zr0.55Ox Ferroelectrics, IEEE Transactions on Electron Devices, 2021, 68 (12), 6359-6364. Pei, J.X.; Wu, X.H.; Huo, J.Y.; Liu, W.J.; Zhang, D.W.; Ding, S.J., High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr3/CsPbI3 blend quantum dots, Nanotechnology, 2021, 32 (9), 095204. Tan, H.T.; Chu, Y.L.; Wu, X.H.; Liu, W.J.; Zhang, D.W.; Ding, S.J., High-Performance Flexible Gas Sensors Based on Layer-by-Layer Assembled Polythiophene Thin Films, Chemistry of Materials, 2021, 33 (19), 7785-7794. Li, L.K.; Wang, X.L.; Pei, J.X.; Liu, W.J.; Wu, X.H.; Zhang, D.W.; Ding, S.J., Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing, Science China-Materials, 2021, 64 (5), 1219-1229. Chen, Y.T.; Zhao, C.Y.; Zhang, T.T.; Wu, X.H.; Zhang, W.J.; Ding, S.J., Flexible and Filter-Free Color-Imaging Sensors with Multicomponent Perovskites Deposited Using Enhanced Vapor Technology, Small, 2021, 17 (26), 8. Zhang, M.-N.; Wu, X.H.; Riaud, A.; Wang, X.-L.; Xie, F.X.; Liu, W.-J.; Mei, Y.F.; Zhang, D.W.; Ding, S.-J., Spectrum projection with a bandgap-gradient perovskite cell for colour perception, Light: Science & Applications, 2020, 162 (9). Ding, S.-J.; Wu, X.H., Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices， Chem. Mater. 2020, 32, 1343?1357 (Invited Perspective) Li, L.K.;Shao, Y.; Wang, X.L.; Wu, X.-H.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time. IEEE Transactions on Electron Devices, 2020, 67(1), 105-112. Wang, X.-L.; Shao, Y.; Wu, X.H.; Zhang, M.N.; Li, L.K.; Liu, W.-J.; Zhang, D.W.; Ding, S.J., Light response behaviors of amorphous In-Ga-Zn-O thin film transistors via in situ interfacial hydrogen doping modulation. RSC Adv. 2020, 10, 3572-3578 . Xie, L.-Y.; Xiao D.-Q.; Pei, J.-X.; Huo, J.Y.; Wu, X.H.; Liu, W.-J.; Ding S.-J., Growth, physical and electrical characterization of nickel oxide thin ?lms prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors, Materials Research Rxpress, 2020, 7 (4). Liu, D.-D.; Pei, J.X.; Li, L.K.; Huo, J.Y.; Wu, X.H.; Liu, W.-J.; Ding S.-J., Multilevel memory and synaptic characteristics of a-IGZO thin-?lm transistor with atomic layer–deposited Al2O3/ZnO/Al2O3 stack layers, Journal of Materials Research, 2020, 35 (7), 732-737. Wang, Y.-P.; Wu, X.H.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J., Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion, ACS Applied Electronic Materials, 2020, 2 (6), 1653-1660. Zhang, M.-N.; Shao, Y.; Wang, X.-L.; Wu, X.H.; Liu, W.-J.; Ding, S.-J., Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels, Chin. Phys. B, 2020, 29 (7), 088503. Huo, J.Y.; Wang, X.L.; Wu, X.H.; Liu, W.-J.; Ding, S.-J., Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications, Semiconductor Science and Technology, 2020, 36 (2), 025004. Liu, D.-D; Liu, W.-J; Pei,J.-X; Xie,L.-Y; Huo, J.Y.; Wu, X.-H; Ding, S.J.,Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer， Nanoscale Research Letters 2019, 14,363 Zhu, B.; Wu, X.; Liu, W. J.; Lu, H. L.; Zhang, D. W.; Fan, Z.; Ding, S. J., High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In2O3 Films. ACS Appl Mater Interfaces 2019, 11 (1), 747-752. Ding, Z.-J.; Zhu, B.; Liu, W.-J.; Wu, X.-H.; Ding, S.-J., The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor. Japanese Journal of Applied Physics 2019, 58 (SH). Zhu, B.; Wu, X.; Liu, W. J.; Ding, S. J.; Zhang, D. W.; Fan, Z., Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing. Nanoscale Res Lett 2019, 14 (1), 53. Zhu, B.; Ding, Z. J.; Wu, X.; Liu, W. J.; Zhang, D. W.; Ding, S. J., Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor. Nanoscale Res Lett 2019, 14 (1), 76. Shao, Y.; Wu, X.; Zhang, M. N.; Liu, W. J.; Ding, S. J., High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric. Nanoscale Res Lett 2019, 14 (1), 122. Bian, Y.-J.; Cha, M.-Y.; Chen, L.; Sun, Q.-Q.; Zhang, W.; Ding, S.-J., Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets. Micro & Nano Letters 2019, 14 (10), 1079-1082. Sun, S. M.; Liu, W. J.; Golosov, D. A.; Gu, C. J.; Ding, S. J., Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 (201) heterojunctions. Nanoscale Res Lett 2019, 14 (1), 275. Huan, Y. W.; Liu, W. J.; Tang, X. B.; Xue, X. Y.; Wang, X. L.; Sun, Q. Q.; Ding, S. J., Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces. Nanoscale Res Lett 2019, 14 (1), 181. Wang, Y.-P.; Ding, Z.-J.; Zhu, B.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2018, 36 (3). Gao, J.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, D. W., High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air. AIP Advances 2018, 8 (1). Zhu, B.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W.; Fan, Z., Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching. The Journal of Physical Chemistry C 2018, 122 (37), 21537-21542. Ding, Z.-J.; Wang, Y.-P.; Liu, W.-J.; Ding, S.-J.; Baklanov, M. R.; Zhang, D. W., Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen. Journal of Physics D: Applied Physics 2018, 51 (11). Ma, Q.; Shao, Y.; Wang, Y. P.; Zheng, H. M.; Zhu, B.; Liu, W. J.; Ding, S.-J.; Zhang, D. W., Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOx Channels via O2 Plasma Treatment. IEEE Electron Device Letters 2018, 39 (11), 1672-1675. Ma, Q.; Zheng, H. M.; Shao, Y.; Zhu, B.; Liu, W. J.; Ding, S. J.; Zhang, D. W., Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors. Nanoscale Res Lett 2018, 13 (1), 4. Sun, S. M.; Liu, W. J.; Xiao, Y. F.; Huan, Y. W.; Liu, H.; Ding, S. J.; Zhang, D. W., Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 (201)Heterojunctions. Nanoscale Res Lett 2018, 13 (1), 412. Zheng, H.-M.; Sun, S.-M.; Liu, H.; Huan, Y.-W.; Yang, J.-G.; Zhu, B.; Liu, W.-J.; Ding, S.-J., Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors. Chinese Physics Letters 2018, 35 (12). Huan, Ya-Wei ; Wang, Xing-Lu ; Liu, Wen-Jun ; Dong, Hong ; Long, Shi-Bing; Sun, Shun-Ming ; Yang, Jian-Guo; Wu, Su-Dong ; Yu, Wen-Jie ; Horng, Ray-Hua; Xia, Chang-Tai ; Yu, Hong-Yu; Lu, Hong-Liang ; Sun, Qing-Qing; Ding, Shi-Jin ; Zhang, David Wei, Band alignment of indium-gallium-zinc oxide/β-Ga2O3(201) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics 2018, 57(10), 100312. Huan, Ya-Wei; Sun, Shun-Ming ; Gu, Chen-Jie ; Liu, Wen-Jun ; Ding, Shi-Jin ; Yu, Hong-Yu ; Xia, Chang-Tai ; Zhang, David Wei, Recent Advances in beta-Ga2O3-Metal Contacts. Nanoscale Research Letters 2018, 13 (1), 246. Sun, S.-M.; Liu, W.-J.; Wang, Y.-P.; Huan, Y.-W.; Ma, Q.; Zhu, B.; Wu, S.-D.; Yu, W.-J.; Horng, R.-H.; Xia, C.-T.; Sun, Q.-Q.; Ding, S.-J.; Zhang, D. W., Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy. Applied Physics Letters 2018, 113(3). Zheng, H. M.; Gao, J.; Sun, S. M.; Ma, Q.; Wang, Y. P.; Zhu, B.; Liu, W. J.; Lu, H. L.; Ding, S. J.; Zhang, D. W., Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors. IEEE Journal of the Electron Devices Society 2018, 6, 320-324. Shao Yan ; Ding Shi-Jin, Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. Acta Physica Sinica 2018, 67 (9), 098502. Qian, S. B.; Wang, Y. P.; Shao, Y.; Liu, W. J.; Ding, S. J., Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory. Nanoscale Res Lett 2017, 12 (1), 138. Liu, W.-J.; Wang, Y.-H.; Zheng, L.-L.; Lu, H.-L.; Ding, S.-J., Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels. Microelectronic Engineering 2017, 167, 105-109. Qian, S.-B.; Shao, Y.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer. IEEE Transactions on Electron Devices 2017, 64 (7), 3023-3027. Liu Qi-Xuan ; Wang Yong-Ping ; Liu Wen-Jun ; Ding Shi-Jin, Conduction mechanisms of MIM capacitors with ZrO2/SiO2/ZrO2 stacked dielectrics and Ni electrodes. Acta Physica Sinica, 2017, 66 (8), 087301. Wang, Y.-P.; Ding, Z.-J.; Liu, Q.-X.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors. Journal of Materials Chemistry C 2016, 4 (47), 11059-11066. Zheng, L.-L.; Qian, S.-B.; Wang, Y.-H.; Liu, W.-J.; Ding, S.-J., Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al2O3/SiO2 Stacked Insulators. IEEE Journal of the Electron Devices Society 2016, 4 (5), 347-352. Zheng, L.-L.; Ma, Q.; Wang, Y.-H.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator. IEEE Electron Device Letters 2016, 37 (6), 743-746. Wang, Y.-H.; Ma, Q.; Zheng, L.-L.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, W., Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric. Chinese Physics Letters 2016, 33 (5). Wang, Y.-H.; Ma, Q.; Zheng, L.-L.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, D. W., Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air. IEEE Transactions on Electron Devices 2016, 63 (5), 1893-1898. Wei, L.; Liu, Q. X.; Zhu, B.; Liu, W. J.; Ding, S. J.; Lu, H. L.; Jiang, A.; Zhang, D. W., Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage. Nanoscale Res Lett 2016, 11 (1), 213. Zhu, B.; Liu, W.-J.; Wei, L.; Ding, S.-J., Voltage-dependent capacitance behavior and underlying mechanisms in metal–insulator–metal capacitors with Al2O3–ZrO2–SiO2 nano-laminates. Journal of Physics D: Applied Physics 2016, 49 (13). Liu, W. J.; Chen, L.; Zhou, P.; Sun, Q. Q.; Lu, H. L.; Ding, S. J.; Zhang, D. W., Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device. Journal of Nanomaterials 2016, 2016, 1-6. Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack. AIP Advances 2015, 5 (12). Zhang, W.-P.; Qian, S.-B.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., Novel Multi-Level Cell TFT Memory With an In–Ga–Zn-O Charge Storage Layer and Channel. IEEE Electron Device Letters 2015, 36 (10), 1021-1023. Zhu, B.; Liu, W.-J.; Wei, L.; Zhang, D. W.; Jiang, A.; Ding, S.-J., Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks. Journal of Applied Physics 2015, 118 (1). Hu, J.; Zhang, J.; Fu, Z.; Weng, J.; Chen, W.; Ding, S.; Jiang, Y.; Zhu, G., Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating. ACS Appl Mater Interfaces 2015, 7 (11), 6325-30. Zhang, W.-P.; Chen, S.; Qian, S.-B.; Ding, S.-J., Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric. Semiconductor Science and Technology 2015, 30 (1). Qiu-Xiang, Z.; Bao, Z.; Shi-Jin, D.; Hong-Liang, L.; Qing-Qing, S.; Peng, Z.; Wei, Z., Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors. IEEE Electron Device Letters 2014, 35 (11), 1121-1123. Hu, J.; Zhang, J.; Fu, Z.; Jiang, Y.; Ding, S.; Zhu, G., Solvent vapor annealing of ferroelectric P(VDF-TrFE) thin films. ACS Appl Mater Interfaces 2014, 6 (20), 18312-8. Jiang, T.; Zhu, B.; Ding, S.-J.; Fan, Z.; Zhang, D. W., High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advanced interconnects. J. Mater. Chem. C 2014, 2 (32), 6502-6510. Zhang, Q.-X.; Zhu, B.; Zhang, L.-F.; Ding, S.-J., Atomic-layer-deposited SiO2/TiO2/SiO2 sandwiched dielectrics for metal–insulator–metal capacitor application. Microelectronic Engineering 2014, 122, 1-4. Chen, S.; Zhang, W.-P.; Cui, X.-M.; Ding, S.-J.; Sun, Q.-Q.; Zhang, W., Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks. Applied Physics Letters 2014, 104 (10). Lan, L.; Gou, H.-Y.; Ding, S.-J.; Zhang, W., Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application. Chinese Physics B 2013, 22 (11). Chen, Sun; Cui, Xing-Mei; Ding, Shi-Jin; Sun, Qing-Qing; Nyberg, Tomas; Zhang, Shi-Li; Zhang, Wei, Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-OTFT Memory. IEEE Electron Device Letters 2013, 34(8), 1008-1010. Cui, X.-M.; Chen, S.; Ding, S.-J.; Sun, Q.-Q.; Nyberg, T.; Zhang, S.-L.; Zhang, W., Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals. IEEE Electron Device Letters 2013, 34 (8), 1011-1013. Guo, J.-J.; Li, M.-D.; Sun, Q.-Q.; Yang, W.; Zhou, P.; Ding, S.-J.; Zhang, D. W., A Water-free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films. Chemical Vapor Deposition 2013, 19 (4-6), 156-160. Zhang, L.-F.; Xu, H.; Zhang, Q.-X.; Ding, S.-J.; Zhang, D. W., Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O3–HfO2 dielectrics for metal–insulator–metal capacitor applications. Microelectronic Engineering 2013, 106, 96-99. Ding, Shi-Jin; Chen, Hong-Bing; Cui, Xing-Mei; Chen, Sun; Sun, Qing-Qing; Zhou, Peng; Lu, Hong-Liang; Zhang, David Wei; Shen, Chen, Atomic layer deposition of high-density Pt nanodots on Al2O3 film using(MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications, Nanoscale Research Letters 2013, 8(80). Gou, H.-Y.; Chen, S.; Ding, S.-J.; Sun, Q.-Q.; Lu, H.-L.; Zhang, D. W.; Wang, P.-F., Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al2O3/HfAlO/Al2O3 layers and Pd electrode. Thin Solid Films 2013, 529, 380-384.