王茂俊 - 北京大学 - 信息科学技术研究所

个人简介

学习经历： 2002.9~2007.7 北京大学物理系博士半导体光电子学 1998.9~2002.7 南京大学强化部学士物理专业工作经历： 2013.08 ~ 至今北京大学信息科学技术学院微纳电子学系副教授 2011.08 ~ 2013.07 北京大学信息科学技术学院微纳电子学系讲师 2010.01 ~ 2010.07 中国电子科技集团公司第55研究所宽禁带半导体研发部工程师 2007.08 ~ 2009.12 香港科技大学电子和计算机工程系博士后

研究领域

1. GaN基材料特性、器件模拟 2. 射频GaN HEMT器件 3. Si基GaN功率开关器件 4. 自支撑GaN衬底上垂直结构二极管和三极管 5. Ga2O3基功率电子器件 6. 新材料及电子器件

近期论文

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Sun H, Lei W, Chen J, Jin Y, Wang M. Bias-Dependent Conduction-Induced Bimodal Weibull Distribution of the Time-Dependent Dielectric Breakdown in GaN MIS-HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES [Internet]. 2022. Yin R, Li C, Zhang B, Wang J, Fu Y, Wen CP, Hao Y, Shen B, Wang M. Physical mechanism of field modulation effects in ion implanted edge termination of vertical GaN Schottky barrier diodes. Fundamental Research [Internet]. 2022;2:629-634. Sun H, Lin W, Yin R, Chen J, Hao Y, Shen B, Wang M, Jin Y. Evaluation of the border traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS structure with long time constant using quasi-static capacitance voltage method. Japanese Journal of Applied Physics [Internet]. 2022. Ji X, Fariza A, Zhao J, Wang M, Wang J, Yang F, Li J, Wei T. Ridge-channel AlGaN/GaN normally-off high-electron mobility transistor based on epitaxial lateral overgrowth. Semiconductor Science and Technology [Internet]. 2021;36:075003. Lin W, Wang M, Yin R, Wei J, Wen CP, Xie B, Hao Y, Shen B. Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes. IEEE Electron Device Letters. 2021;42:1124-1127. Gu Y, Wang Y, Chen J, Chen B, Wang M, Zou X. Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs. IEEE Transactions on Electron Devices. 2021;68:3290-3295. Cheng Q, Wang M, Tao M, Yin R, Li Y, Yang N, Xu W, Gao C, Hao Y, Yang Z. Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities. IEEE Electron Device Letters. 2020;41:485-488. Li Y, Wang M, Yin R, Zhang J, Tao M, Xie B, Hao Y, Yang X, Wen CP, Shen B. Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance. IEEE Electron Device Letters. 2020;41:329-332.Abstract Yin R, Li Y, Lin W, Wen CP, Hao Y, Fu Y, Wang M. A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance. IEEE ELECTRON DEVICE LETTERS. 2019;40:694-697.Abstract Sun H, Wang M, Yin R, Chen J, Xue S, Luo J, Hao Y, Chen D. Investigation of the Trap States and V-TH Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2019;66:3290-3295.Abstract Sun H, Wang M, Chen J, Liu P, Kuang W, Liu M, Hao Y, Chen D. Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65:4814-4819.Abstract Gao J, Jin Y, Hao Y, Xie B, Wen CP, Shen B, Wang M. Gate-Recessed Normally OFF GaN MOSHEMT With High-Temperature Oxidation/Wet Etching Using LPCVD Si3N4 as the Mask. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65:1728-1733.Abstract SCI被引用次数：24. Gao J, Jin Y, Xie B, Wen CP, Hao Y, Shen B, Wang M. Low ON-Resistance GaN Schottky Barrier Diode With High VON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology. IEEE Electron Device Letters. 2018;39:859-62.Abstract Sun H, Liu M, Liu P, Lin X, Chen J, Wang M, Chen D. Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65:622-628.Abstract SCI被引用次数：15. Lin W, Wen CP, Hao Y, Shen B, Wang M. Measurement of the Transport Property of 2-DEG in AlGaN/GaN Heterostructures Based on Circular Transmission Line Modeling of Two Concentric-Circle Schottky Contacts. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65:3163-3168.Abstract SCI被引用次数：1. Tao M, Liu S, Xie B, Wen CP, Wang J, Hao Y, Wu W, Cheng K, Shen B, Wang M. Characterization of 880 V Normally Off GaN MOSHEMT on Silicon Substrate Fabricated With a Plasma-Free, Self-Terminated Gate Recess Process. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018;65:1453-1457.Abstract SCI被引用次数：35. Yin R, Li Y, Sun Y, Wen CP, Hao Y, Wang M. Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET. Applied Physics Letters [Internet]. 2018;112:233505. Gao J, Wang M, Yin R, Liu S, Wen CP, Wang J, Wu W, Hao Y, Jin Y, Shen B. Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage. IEEE ELECTRON DEVICE LETTERS. 2017;38:1425-1428.Abstract SCI被引用次数：26. Liu S, Wang M, Tao M, Yin R, Gao J, Sun H, Lin W, Wen CP, Wang J, Wu W, et al. Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers. IEEE ELECTRON DEVICE LETTERS. 2017;38:1075-1078.Abstract SCI被引用次数：14. Tao M, Wang M, Wen CP, Wang J, Hao Y, Wu W, Cheng K, Shen B. Kilovolt GaN MOSHEMT on silicon substrate with breakdown electric field close to the theoretical limit, in 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings.; 2017:93-6.