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1. Qianqian Tao, Jinyan Wang, Bin Zhang, Xin Wang, Mengjun Li, Qirui Cao, Wengang Wu and Xiaohua Ma, Investigation on mechanisms of current saturation in gateless AlGaN/GaN heterostructure device, Japanese Journal of Applied Physics, Volume 60, Number 2, 2021
2. Mengjun Li, Jinyan Wang, Bin Zhang, Qianqian Tao, Hongyue Wang, Qirui Cao, Chengyu Huang, Jianghui Mo, Wengang Wu, Shujun Cai, Improved fabrication of fully-recessed normally-off SiN/SiO2/GaN MISFET based on the self-terminated gate recess etching technique, Solid-State Electronics, Volume 177, March 2021, 107927
3. Cao, Qirui, Wang, Jinyan, Li, Mengjun, Wang, Hongyue, Tao, Qianqian, Zhang, Bin and Wu, Wengang, Study on the charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure, Applied Physics Letters, Vol. 115, No. 15, pp. 152105, 2019
4. Mengjun Li, Jinyan Wang, Hongyue Wang, Qirui Cao, Jingqian Liu, Chengyu Huang, Improved performance of fully-recessed normally-off LPCVD SiN/GaN MISFET using N2O plasma pretreatment, Solid-State Electronics, Volume 156, Pages 58-61, 2019
5. Hongyue Wang, Jinyan Wang, Mengjun Li, Qirui Cao, Min Yu, Yandong He, Wengang Wu, 823 mA/mm drain current density and 945 MW/cm2 Baliga's figure of merit enhancement-mode GaN MISFETs with a novel PEALD-AlN/LPCVD-Si3N4 dual gate dielectric, IEEE Electron Device Letters, Vol. 39, No. 12 , 1888 - 1891, Dec. 2018
6. Hongyue, Wang, Jinyan, Wang, Mengjun, Li, Yandong, He, Maojun, Wang, Min, Yu, Wengang, Wu, Yang, Zhou and Gang, Dai, An "ohmic-first" self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET, Japanese Journal of Applied Physics，57, 4S, 04FG05, 2018
7. Hongyue Wang, Jinyan Wang, Jingqian Liu, Yandong He, Maojun Wang, Min Yu, Wengang Wu, Normally-off Al2O3/GaN MOSFET: role of border traps on the device transport characteristics, Solid-State Electronics, Vol. 141 2018, p. 13-17
8. Hongyue Wang, Jinyan Wang, Jingqian Liu, Mengjun Li, Yandong He, Maojun Wang, Min Yu, Wengang Wu, Yang Zhou, and Gang Dai, Normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics, Applied Physics Express 10, 106502 (2017)
9. H. Wang, J. Wang, J. Liu, M. Yu, B Xie and W. Wu, An improved normally-off Al2O3/GaN MOSFET based on self-terminating gate-re-cess etching technique, Solid State Devices and Materials, 2017, PS-6-09
10. Lin Zhu, Jinyan Wang, Haisang Jiang, Hongyue Wang, Wengang Wu, Xiaoping Li, Yang Zhou and Gang Dai, Theoretical analysis of buffer trapping effects on off-state breakdown between gate and drain in AlGaN/GaN HEMTs, 2016 IEEE International Conference on Integrated Circuits and Microsystems, Nov. 23-25, 2016
11. Liu, J.; Wang, J.; Xu, Z.; Jiang, H.; Yang, Z.; Wang, M.; Yu, M.; Xie, B.; Wu, W.; Ma, X.; Zhang, J.; Hao, Y., Locally nonuniform oxidation in self-terminating thermal oxidation assisted wet etching technique for AlGaN/GaN heterostructure, Electronics Letters, Vol.51, No. 23, 2015, pp. 1932 - 1933
12. Jingqian Liu, Jinyan Wang, Zhe Xu, Haisang Jiang, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, Investigation of oxidation process in self-terminating gate recess wet etching technique for AlGaN/GaN normally-off MOSFETs, ELECTRONICS LETTERS, Vol.50, No. 25, 2014, pp. 1980-1982
13. Zhe Xu, Jinyan Wang, Jingqian Liu, Chunyan Jin, Yong Cai, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12, DECEMBER 2014, pp.1197
14. Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Chunyan Jin, Zhenchuan Yang, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10^13 A/mm Leakage Current and 10^12 ON/OFF Current Ratio, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 12, DECEMBER 2014, pp.1200
15. Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiaoping Li, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, Jincheng Zhang, and Yue Hao, High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT, IEEE ELECTRON DEVICE LETTERS, VOL. 35, NO. 1, JANUARY 2014, pp.33
16. Zhe Xu, Jinyan Wang, Yong Cai, Jingqian Liu, Zhen Yang, Xiaoping Li, Maojun Wang, Zhenchuang Yang, Bin Xie, Min Yu, Wengang Wu, Xiaohua Ma, Jincheng Zhang and Yue Hao, 300°C operation of normally off AlGaN/GaN MOSFET with low leakage current and high on/off current ratio, ELECTRONICS LETTERS, February 2014, Vol. 50, No. 4, pp. 315–316
17. Zhen Yang, Jinyan Wang, Xiaoping Li, Bo Zhang, Jian Zhao, Zhe Xu, Maojun Wang, Min Yu, Zhenchuan Yang, Wengang Wu, Yuming Zhang, Jincheng Zhang, Xiaohua Ma, and Yue Hao, A novel method for measuring parasitic resistance in high electron mobility transistors, Solid-State Electronics, Volume 100, October 2014, Pages 27–32
18. Zhen Yang, Jinyan Wang, Zhe Xu, Xiaoping Li, Bo Zhang, Maojun Wang, Min Yu, Jincheng Zhang, Xiaohua Ma and Yongbing Li, Analysis of AlGaN/GaN High Electron Mobility Transistors Failure Mechanism under Semi-on DC Stress, Journal of Semiconductors, Vol. 35, No. 1, 014007, (2014)
19. Zhe Xu, Jinyan Wang, Yang Liu, Jinbao Cai, Jingqian Liu, Maojun Wang, Min Yu, Bing Xie, Wengang Wu, Xiaohua Ma, and Jincheng Zhang, Fabrication of Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching Technique, IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 7, JULY 2013, pp.855
20. Shenghou Liu, Jinyan Wang, Rumin Gong, Shuxun Lin, Zhihua Dong, Min Yu, C. P. Wen, Chunhong Zeng, Yong Cai, Baoshun Zhang, Fujun Xu, Jincheng Zhang, and Bo Shen, Enhanced device performance of AlGaN/GaN high electron mobility transistors with thermal oxidation treatment, Japanese Journal of Applied Physics, vol. 50 no. 4, 04DF10-1, 2011
21. Zhihua Dong, Jinyan Wang, C.P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang, High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure, Microelectronics Reliability, 52(2), 434-438, 24 October 2011
22. Zhou Bin and Wang Jin-Yan and Meng Di and Lin Shu-Xun and Fang Min and Dong Zhi-Hua and Yu Min and Hao Yi-Long and Cheng P. Wen, A High Breakdown Voltage AlGaN/GaN MOSHEMT Using Thermal Oxidized Al-Ti as the Gate Insulator, Chinese Physics Letters, Vol.28, No.10, pp.107303, 2011
23. Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Min Yu, Cheng P. Wen, Yong Cai, and Baoshun Zhang, Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors, APPLIED PHYSICS LETTERS 97, 062115, 2010
24. Rumin Gong, Jinyan Wang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P. Wen, Yong Cai, Baoshun Zhang and Jincheng Zhang, Analysis on the new mechanisms of low-resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, Journal of Physics D: Applied Physics, 43(2010) 395102
25. S. Liu, J. Wang,R. Gong, Z. Dong, M. Yu,C. P. Wen,C. Zeng,Y. Cai,B. Zhang, Enhanced Device Performance of AlGaN/GaN MOSHEMT with Thermal Oxidation, 2010 International Conference on Solid State Devices and Materials (SSDM2010), Tokyo Japan, pp.371-372
26. Zhihua Dong, Jinyan Wang, C.P. Wen, Danian Gong, Ying Li, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang, High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator, Solid-State Electronics 54 (2010) 1339–1342
27. Chuan Xu, Jinyan Wang, Hongwei Chen, Fujun Xu, Zhihua Dong, Yilong Hao, and Cheng P. Wen, The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure, IEEE ELECTRON DEVICE LETTERS, VOL. 28, NO. 11, NOVEMBER 2007, p. 942
28. Xu, Chuan; Wang, Jinyan; Wang, Maojun; Jin, Haiyan; Hao, Yilong; Wen, Cheng P., Reeves's circular transmission line model and its scope of application to extract specific contact resistance, Solid-State Electronics, v 50, n 5, May, 2006, p 843-847
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