刘晓彦 - 北京大学 - 信息科学技术研究所

个人简介

教育背景 1984/09—1988/06，北京大学计算机系，理学学士 1988/09—1991/06，北京大学计算机系，理学硕士，导师: 韩汝琦 1997/09—2001/06，北京大学计算机系，理学博士，导师: 韩汝琦主要荣誉与获奖 2006年入选教育部新世纪优秀人才；获得国家技术发明二等奖，北京市发明一等奖等奖励。

研究领域

主要从事新型微纳电子器件模型、模拟，新型计算方法与硬件实现等方面研究

近期论文

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Xiaoyan Liu, Peng Huang, Bin Gao, Haitong Li, Yudi Zhao, Jinfeng Kang， Reliability Simulation of TMO RRAM，22nd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits，IPFA 2015 Jun.29 -July.2, I-15，Taiwan （Invited） Pengying Chang, Xiaoyan Liu*, Shaoyan Di, and Gang Du, “Evaluation of Ballistic Transport in III-V Based p-Channel MOSFETs”, IEEE Trans. on Electron Devices, vol. 64, no. 3, pp. 1053-1059, 2017. Pengying Chang, Xiaoyan Liu*, Lang Zeng, Kangliang Wei, Gang Du, Investigation of hole mobility in strained InSb ultrathin body pMOSFETs，IEEE Transactions on Electron Devices, v 62, n 3, p 947-954, March 2015 H. Jiang, X. Liu*, N. Xu, Y. He, G. Du, and X. Zhang, Investigation of self-heating effect on hot carrier degradation in multiple-fin SOI FinFETs, IEEE Electron Device Letters, vol. 36, no. 12, pp. 1258-1260, 2015 Pengying Chang, Xiaoyan Liu*, Gang Du, and Xing Zhang, Assessment of Hole Mobility in Strained InSb, GaSb and InGaSb Based Ultra-Thin Body pMOSFETs with Different Surface Orientations, International Electron Devices Meeting , pp. 7.7, 2014 P. Huang, X. Liu*, B. Chen, H. Li, Y. Wang, Y. Deng, K. Wei, L. Zeng, B. Gao, G. Du, X. Zhang, and J. Kang, “A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations,” IEEE Trans. Electron Devices, 60, pp. 4090-4097, 2013. P. Huang, X.Y. Liu*, W.H. Li, Y.X. Deng, B. Chen, Y. Lu, B. Gao, L. Zeng, K.L. Wei, G. Du, X. Zhang, and J.F. Kang, A Physical Based Analytic Model of RRAM Operation for Circuit Simulation, IEDM 2012 Fei Liu, Xiaoyan Liu*, and Jinfeng Kang，Energy gap tuning in uniaxial strained zigzag graphene nanoribbons，Appl. Phys. Lett. 98, 213502 ,2011 Zeng L, Liu XY＊, Zhao YN, et al., A Computational Study of Dopant-Segregated Schottky Barrier MOSFETs , IEEE Transactions on Nanotechnology, Vol.: 9, No.1, 108-113 ,JAN 2010 Xiaoyan Liu, Jinfeng Kang; Lei Sun, Ruqi Han. Threshold Voltage Model for MOSFETs with High-K Gate Dielectrics, IEEE Electron Device Lett. Vol.23, No.8, 2002,270