个人简介

Post-Doctoral Rensselaer Polytechnic Institute, Troy, NY 1979; Ph.D. Gorakhpur University, India 1977

研究领域

Organic Physical/Inorganic Sensors and Imaging Spectroscopy/Dynamics

Dr. N. B. Singh, a Fellow of the American Society of Materials (ASM) International, a Fellow of the Society of Photonics and Instrumentations Engineering (SPIE) and a Fellow of the Optical Society of America is internationally known for his researches on EOIR, Lasers, AO, RF, Microelectronic materials and Chemical, Biological and Radiation detectors. Dr. Singh’s interests center on “Development of Materials, Devices and Subcomponents for Military and commercial Applications” which utilize solidification, physical vapour transport, crystal growth of bulk, thin crystals, nanocubes, nanodots, coatings, device fabrications and characterization. Currently, this research has following foci: 1. Chemical and materials processes: Development of chemical and mechanical processes which involved chemistry, thermodynamics, fluid flow, etching, coatings and metallurgical knowledge. 2. Nanowires based Naño-APDS and Nanoelectronics: Nano-APDs for single photon detections and nanoelectronic for high frequency and low power applications. 3. Dielectric Materials with colossal values for high pulse power:Development of materials with dielectric constant greater than100, 000 and processes to meet the requirements of high energy pulse applications. 4. Radiation Detector Materials: Development of novel class of detectors such as halides and chalcogenides for ƒ×-ray detections and organic and organometallic molecules for neutron detection. 5. AOTF based Hyperspectral Imagers: Development of practical Mid wave infrared (MWIR) and long wave infrared (LWIR) multi/hyperspectral Acousto-Optic (AO) crystal based imagers using unique and very anisotropic crystals grown by Bridgman and PVD method. 6. NLO Materials for MWIR and LWIR Laser Development: Development of Second harmonic (SHG) and Optical Parametric Oscillation (OPO) laser materials and fabricate by using all common mode of solidification encountered in casting, welding processes and crystal growth. Research is focused to produce materials for lasers, and electro-optic modulators. 7. Novel Heat spreader: Development of composites with very high thermal conductivity and novel approach to process materials which produces high conductivity. 8. Nanocubes and Nanodots for SWIR and MWIR detectors: Nanocubes and nanodots of PbSe type materials which have great potential for the high temperature detectors. 9. Novel large area materials for Commercial/Defence Applications; Large area (6”) size SiC and AlN are essential for commercial and defense applications. Physical vapor deposition (PVD) cannot produce at this stage high quality large size boules of that size. We are developing novel technique which will meet this goal. 10. RF Heterostructure Materials for High Power Applications: Development of wide band heterostructures of SiC and AlN by PVD for high power applications: Interactions involve fluid-mechanical forces, convective heat transfer, and solutal diffusion fields near solid-liquid and solid-vapor interfaces. 11. UV Filter Sensors: UV crystals are excellent for plume detections nd for biological microscopes. We are developing these materials by low temperature growth methods. 12. Laser host materials for high power lasers: Several halides and SiC-AlN has very high thermal conductivity compared to commercial YAG host and can be used for high power lasers. We are developing novel method and composition for high IRCM power applications. 13. Naño-Engineered Quantum Dot limiters for Laser threat: We are developing materials for Surface Plasmon Polaritons Quantum Dot Limiters (SPPs-QDTL) for enhancing the sensitivity in low light detection and for laser threat warning systems. 14. Quasi- Phase Matched Materials: Development of Quasiphase materials for Laser frequency conversion, EM and Structural applications. It Involves domain engineering, bandgap engineering for EO applications and lattice hardening for structural applications. 15. Coating Developments (AR, AT and Protective): Development of coatings for anti-reflection (AR), anti-tamper (AT) and protection applications: Involves design and multi-level coatings for wafer, devices and components.

近期论文

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Selenides for Nonlinear Optical applications, J. Emerging Materials Research, 1, 12, 185 (2012) Performance of Novel Materials for Radiation Detection: Tl3AsSe3, TlGaSe2, Tl4HgI6,J. Nuclear Instrumentation and Methods in Physics Research Section A 652, 183-185 (2011) Characteristics of thick ZnSe films on quasi-phase-matched (QPM) GaAs, J.Crystal Growth 312, 1142 (2010). Quaternary AgGaGenSe2(n+1) crystals for NLO applications, J. Crystal Growth 312 , 1114 (2010). Effect of AlN doping on the growth morphology of SiC, J. Crystal Research and Technology, 44, 9 903-909 (2009) Optical probes of orientation patterned ZnSe quasi-phase-matched devices, J. Optical Engineering , 48(11), 114201 (2009). (SiC)x(AlN)1-x solid-solution substrates for high temperature and high power devices ,Crystal Growth and Design, 10 (8), (2010) 3508–3514 Effect of growth conditions on the morphology of PbSe, J. Crystal Growth, 311, 1080-1086 (2009) Novel quaternary semiconductor materials; growth and characterization, IEEE Trans. Nuclear Sci. 56, 3 813 (2009). Development of Advanced Radiation Materials and Sensors, ES Technical Journal, 1,4, 53-64 (2008). Morphology of thick SiC epitaxial film grown by PVT method,, J. Electronic Materials37 (2008) 379. Operational characteristics of LWIR AOTF based multispectral imager, J. Optical Engineering Vol.47, 1, 013201 (2008). Crystal growth, fabrication, and design of mercurous bromide acousto-optic tunable filters; Optical Engineering, 46, 6, 064001-6 (2007). Properties of NLO Crystals in THz Wavelength Region, J. Optical Engineering, 45(9), 094002-1 (2006). Periodically Poled Materials for Long Wavelength Infrared (LWIR) NLO Applications, J. Crystal Growth, 274/1-2, 132-137 (2005). X-ray studies of langasite film grown by LPE, J. Materials Science Letters, 22, 1621 (2003) Noncollinear optical parametric oscillator design for walk-off reduction in GaSe crystals, Optical Engineering 42/11, 3270(2003) Physical vapor transport growth of large AlN crystals, J. Crystal Growth 250/1-2, 107(2003) PVT growth and characteristics of AlN single crystals, Physics of Semiconductor Devices 1, 117 (2003)