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Xinqiang Wang, Pengfei Tian, Bo Shen, Weikun Ge, Ming Sun, Qi Wang, Ye Yuan, Junjie Kang, Feiliang Chen, Jianbin Kang, Renchun Tao, Xin Rong, Tao Wang, Ping Wang, Zhaoying Chen, Fang Liu, Bowen Sheng, Shanshan Sheng, Dandan Liu, Kang Zhou, Quanfeng Liu, Zeyuan Qian, Shangfeng Liu and Duo Li.Deep-Ultraviolet Micro-LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously.Advanced Materials,2022,10.1002/adma.202109765
Ye Yuan, Xinqiang Wang, Xiaoxiao Sun, Zhaoying Chen, Wei Luo, Junjie Kang, Tai Li, Tao Wang, Jin Zhang, Lijie Huang and Shangfeng Liu.Drive High Power UVC-LED Wafer into Low-Cost 4-Inch Era: Effect of Strain Modulation.Advanced Functional Materials,2022,10.1002/adfm.202112111
Xinqiang Wang, Bo Shenad and Xinqiang Wang, Liwei Guo, Jing Yang, Renchun Tao, Liuyun Yang, Tao Wang, Xin Rong, Fang Liu and Jiaqi Wei.Effect of unintentional nitrogen incorporation on n-type doping of β-Ga2O3 grown by molecular beam epitaxy.CrystEngComm,2021,10.1039/d1ce01207j
Yu Ye, Xinqiang Wang, Xiaolong Xu, Yanping Li, Tingting Wang, Zhihao Zang, Fang Liu and Chao Lyu.Transferable room-temperature singlephoton emitters in hexagonal boron nitride grown by molecular beam epitaxy.AIP Advances,2021,10.1063/5.0063594
Xinqiang Wang, Shiping Guo, Ye Yuan, Xiaoxiao Sun, Shanshan Sheng, Tao Wang, Long Yan, Zhaoying Chen, Jason Hoo and Shangfeng Liu.Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet-C Light-Emitting Diode Applications.Physica Status Solidi-Rapid Research Letters,2021,10.1002/pssr.202100363
Susu Yang, Houfu Song3, Yan Peng, Lu Zhao, Yuzhen Tong, Feiyu Kang, Mingsheng Xu, Bo Sun and Xinqiang Wang.Reduced thermal boundary conductance in GaN-based electronic devices introduced by metal bonding layer.Nano Research,2021,10.1007/s12274-021-3658-7
Renchun Tao, Tai Li, Jiajia Yang, Yixin Wang, Fang Liu, Bowen Sheng, Zhen Huang, Susu Yang, Liuyun Yang, Xin Rong, Tao Wang, Bo Shen, Yasuhiko Arakawa and Xinqiang Wang.Impact of Quantum Dots on III-Nitride Lasers: A Theoretical Calculation on Linewidth Enhancement Factors.IEEE Journal of Selected Topics in Quantum Electronics,2021,10.1109/JSTQE.2021.3082162
Xinqiang Wang, Jun Xu, Jinmin Zhang, Shiping Guo, Renchun Tao, Xin Rong, Jiaqi Wei, Zhaoying Chen, Ding Wang, Ping Wang, Xiantong Zheng, Shangfeng Liu and Tao Wang.Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD.Superlattices and Microstructures,2021,10.1016/j.spmi.2021.106842
Xinqiang Wang, Zhe Cong, Bo Shen, Shiping Guo, Long Yan, Jason Hoo, Weiyun Wang, Houjin Wang, Yongde Li, Zhaoying Chen, Tao Wang, Xin Rong, Duo Li, Yixin Wang, Junjie Kang, Wei Tong, Ye Yuan, Dan Li, Wei Luo and Shangfeng Liu.Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source.Advanced Functional Materials,2020,10.1002/adfm.202008452
Fang Liu, Tao Wang, Zhihong Zhang, Tong Shen, Xin Rong, Bowen Sheng, Liuyun Yang, Duo Li, Jiaqi Wei, Shanshan Sheng,, Xingguang Li, Zhaoying Chen, Renchun Tao, Ye Yuan, Xuelin Yang, Fujun Xu, Jingmin Zhang, Kaihui Liu, Xin-Zheng Li, Bo Shen and Xinqiang Wang.Lattice Polarity Manipulation of Quasi-vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration.Advanced Materials,2020,10.1002/adma.202106814
X. Q. Wang, B. Shen, F. H. Julien, M. Tchernycheva, Z. X. Qin, Y. X. Wang, X. T. Zheng, D. Li, L. Chen, A. Imran, S. S. Sheng, D. Bouville, S. Pirotta, N. Isac, J. Y. Cheng, D. Wang, A. Jollivet, S. F. Liu and P. Quach.A GaN/AlN quantum cascade detector with a broad response from the mid-infrared (4.1 lm) to the visible (550 nm) spectral range.Applied Physics Letters,2020,10.1063/5.0003615
Xinqiang Wang, Bo Shen, Yuzhen Tong, Ding Wang and Shaojun Lin.III-nitrides based resonant tunneling diodes.Journal of Physics D: Applied Physics,2020,10.1088/1361-6463/ab7f71
X. Q. Wang, B. Shen, Y. T. Zhang, Z. X. Qin, Z. H. Zhang, X. L. Yang, F. J. Xu, F. Bertram, J. J. Yang, S. F. Liu, J. Q. Wei, B. W. Sheng, Wang, Y. Yu, X. Rong and F. Liu.Thermally annealed wafer-scale h-BN films grown on sapphire substrate by molecular beam epitaxy.Applied Physics Letters,2020,10.1063/5.0002101
XINQIANG WANG, JÜRGEN CHRISTEN, BO SHEN, ANDRÉ STRITTMATTER, ZHIXIN QIN, SHIPING GUO, HONGWEI LI, HIDETO MIYAKE, JÜRGEN BLÄSING, PING WANG, ZHAOYING CHEN, XIN RONG, TAO WANG, YIXIN WANG, PETER VEIT, FRANK BERTRAM, GORDON SCHMIDT and BOWEN SHENG.Individually resolved luminescence from closely stacked GaN/AlN quantum wells.Photonics Research,2020,10.1364/PRJ.384508
Xinqiang Wang, 刘开辉, Yuantao Zhang, Bo Shen, Zhixin Qin, Fujun Xu, Xuelin Yang, Siyuan Zhou, Jiaqi Wei, Bowen Sheng, Tao Wang, Ye Yu, Xin Rong, Zhihong Zhang and Fang Liu.Graphene-Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non-Polar Sapphire Substrates for Green Light Emitting Diodes.Advanced Functional Materials,2020,10.1002/adfm.202001283
Bo Song, 刘瑜, and Xinqiang Wang, Shengqiang Zhou, Qi Wang, Weiyun Wang, Junjie Kang, Chi Xu and Ye Yuan.3D-Ising critical behavior in antiperovskitetype ferromagneticlike Mn3GaN.Journal of Applied Physics,2020,10.1063/1.5144620
Qixin Guo, Xinqiang Wang, Tooru Tanaka, Katsuhiko Saito and Fabi Zhang.Conductive transparent (InGa)2O3 film as host for rare earth Eu.AIP Advances,2020,10.1063/1.5143777
Xinqiang Wang, Ji Feng, Bo Shen, Weikun Ge, Ping Wang, Zhaoying Chen, Xiantong Zheng, Shengqiang Zhou, Oleksiy Drachenko, Feipeng Zheng and Xianfa Fang.Determination of electron effective mass in InN by cyclotron resonance spectroscopy.Superlattices and Microstructures,2019,10.1016/j.spmi.2019.106318
Xinqiang Wang, Bo Shen, Xiaosong Wu, Weikun Ge, Fujun Xu, Xuelin Yang, Ding Wang, Ping Wang, Meng Wu, Tao Wang, Jingyue Wang and Liuyun Yang.Planar anisotropic Shubnikov-de-Haas oscillations of two-dimensional electron gas in AlN/GaN heterostructure.Applied Physics Letters,2019,10.1063/1.5116747
Chad S. Gallinat, Gregor Koblmüller, Jacek Przybytek, James S. Speck, Xinqiang Wang, Adam Kwiatkowski, Lesław H. Dmowski and Michał Baj.Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples.Journal of Applied Physics,2019,10.1063/1.5095523
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