史俊杰 - 北京大学

个人简介

教育经历澳大利亚，悉尼，Macquarie 大学 —— 物理系 —— 博士学位 —— 研究生(博士)毕业中国科学院物理研究所 —— 硕士学位 —— 研究生(硕士)毕业河南师范大学 —— 物理系 —— 学士学位 —— 大学本科毕业工作经历 2001.7 - 至今北京大学物理学院 —— 教授，博士生导师 2000.6 - 2001.6 香港科技大学物理系 —— 博士后 1999.12 - 2000.5 Macquarie 大学物理系 —— 博士后 1997.2 - 1999.11 Macquarie大学物理系 —— 博士研究生 1993.11 - 1997.1 河南师范大学物理系 —— 硕士研究生导师 —— 1993年11月被河南省人民政府破格晋升副教授 1992.2 - 1993.10 河南师范大学物理系 —— 讲师 1989.9 - 1992.1 中国科学院物理研究所 —— 硕士研究生

研究领域

1. 凝聚态理论 2. 计算物理 3. 低维半导体物理 4. 半导体光学和电子学

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Design of Lead-Free and Stable Two-Dimensional Dion−Jacobson-Type Chalcogenide Perovskite A'La2B3S10 (A'=Ba/Sr/Ca; B=Hf/Zr) with Optimal Band Gap, Strong Optical Absorption, and High Efficiency for Photovoltaics.Chem. Mater.,32,2450-2460,2020 Two-Dimensional 111-Type In-Based Halide Perovskite Cs3In2X9 (X=Cl, Br, I) with Optimal Band Gap for Photovoltaics and Defect-Insensitive Blue Emission.Phys. Rev. Applied,13,024031,2020,10.1103/PhysRevApplied.13.024031 2D Ca3Sn2S7 Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7×104 cm2V-1s-1.Adv. Mater.,31,1905643,2019 Optimized band gap and fast interlayer charge transfer in two-dimensional perovskite oxynitride Ba2NbO3N and Sr2NbO3N/Ba2NbO3N bonded heterostructure visible-light photocatalysts for overall water splitting.Journal of Colloid and Interface Science,546,20-31,2019 Promising photovoltaic and solid-state-lighting materials: two-dimensional Ruddlesden-Popper type lead-free halide double perovskites Csn+1Inn/2Sbn/2I3n+1 (n=3) and Csn+1Inn/2Sbn/2Cl3n+1/Csm+1Cum/2Bim/2Cl3m+1 (n=3, m=1).J. Mater. Chem. C,6,11575-11586,2018,10.1039/c8tc03926g Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes.ACS Nano,12,7127−7133,2018 Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect.Nanoscale,10,11441-11451,2018,10.1039/c8nr03172j Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect.Nanotechnology,29,205708,2018 Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance.Phys. Rev. B,97,15416,2018,10.1103/PhysRevB.97.115416 Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure.Nanoscale,9,14682–14689,2017,10.1039/c7nr02725g Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure.J. Mater. Chem. A,4,17412-17418,2016,10.1039/c6ta07700e Anomalous Light-Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure.J. Phys. Chem. Lett.,7,2888-2892,2016,10.1021/acs.jpclett.6b01309 Band Gap Opening of Graphene by Forming Heterojunctions with 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect.J. Phys. Chem. C,120,11299–11305,2016,10.1021/acs.jpcc.6b03308 Improvement of n-type conductivity in hexagonal boron nitride monolayer by doping, strain and adsorption.RSC Advances,6,29190-29196,2016,10.1039/c5ra25141a Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations.Sci. Rep.,6,21786,2016,10.1038/srep21786 Breakthrough of the p-type doping bottleneck in ZnO by inserting ultrathin ZnX (X=S, Se and Te) layer doped with NX or AgZn.J. Phys. D: Appl. Phys.,49,095104,2016,10.1088/0022-3727/49/9/095104 Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect.ACS Nano,9,9276-9283,2015,10.1021/acsnano.5b04158 Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation.New J. Phys.,16,113065,2014,10.1088/1367-2630/16/11/113065 Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect.Sci. Rep.,4,6710,2014,10.1038/srep06710 Light emission from several-atom In-N clusters in wurtzite Ga-rich InGaN alloys and InGaN/GaN strained quantum wells.Acta Materialia,59,2773-2782,2011,10.1016/j.actamat.2011.01.016