胡晓东 - 北京大学

个人简介

教育经历电子科技大学物理学与光电子学博士学位研究生(博士)毕业清华大学硕士学位 1978.2 - 1982.1 北京大学物理系学士学位大学本科毕业工作经历 2005.8 - 至今北京大学物理学院北京大学宽禁带半导体研究中心 —— 教授, 博士生导师 2000.7 - 2001.4 美国堪萨斯州立大学 —— Associate Researcher 1998.7 - 2000.7 美国德克萨斯大学奥斯丁分校 —— Research Fellow 1995.8 - 2005.8 北京大学物理系 —— 副教授 1993.1 - 1995.7 清华大学流动站 —— 博士后

研究领域

光电子物理和器件研究（凝聚态物理与材料物理研究所）

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

Practicable alleviation of efficiency droop effect using surface plasmon coupling in GaN-based light emitting diodes.Applied Physics Letters,241111 (2013) Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0:15Ga0:85N Superlattice with AlN Interlayer.Applied Physics Express,061002 Investigation of the electroluminescence spectrum shift of InGaN/GaN multiple quantum well light-emitting diodes under direct and pulsed currents.Journal of Applied Physics,013102 (2013) Stimulated emission related anomalous change of electrical parameters at threshold in GaN-based laser diodes.Applied Physics Letters,,123501 (2013) Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes.Applied Physics Letters,,031105 (2012) Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels,.Applied Physics Express,,051001 Investigation of the light emission properties and carrier dynamics in dual-wavelength InGaN/GaN multiple-quantum well light emitting diodes.Journal of Applied Physics,083101 (2012) Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films.Physical Review Letters,159701 (2011) Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures.Journal of Applied Physics,073106 (2011) Intersubband transitions in Al0.82In0.18N/GaN single quantum well.Chin. Phys. B, Vol.20, No. 9 (2011) 094207 Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer.Applied Physics Letters,061110, 2010 Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field,.Applied Physics Letters,061120 (2009) Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure.Applied Physics Letters,211103, 2009 High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes,.APPLIED PHYSICS LETTERS,211104, 2009 Improved Multi-layer Stopper in the GaN-based Laser Diode, Semicond. Sci..Technol.,045003 (5pp) Shock-assisted superficial hexagonal-to-cubic phase transition in GaN/sapphire interface induced by ultra-violet laser lift-off,.Chinese Physics Letters, Vol.,016203 (2009)