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个人简介

教育经历 1995.9 - 2000.7 南京大学 物理系 博士学位 研究生(博士)毕业 1991.9 - 1995.7 南京大学 物理 大学本科毕业 工作经历 2015.7 - 至今 北京大学 物理学院 在职 教授 2009.8 - 2010.8 英国Strathclyde大学 光电子研究所 访问学者 2005.2 - 2005.2 比利时鲁汶大学 高能粒子研究所 短期访问学者

研究领域

III族氮化物器件物理,包含GaN基垂直结构 LED;GaN基微纳米出光结构;GaN基微纳米器件;调节生物节律的LED光源等等

近期论文

查看导师最新文章 (温馨提示:请注意重名现象,建议点开原文通过作者单位确认)

Jingxin Nie, Tianhang Zhou, Zhizhong Chen ⁎, “Investigation on entraining and enhancing human circadian rhythm in closed environments using daylight-like LED mixed lighting”,Science of the Total Environment 732 (2020) 139334 (SCI) Yifan Chen , Yulong Feng , Zhizhong Chen *,“Study on Electron-Induced Surface Plasmon Coupling with Quantum Well Using a Perturbation Method”,Nanomaterials 2020, 10, 913 (SCI) Jiang S.X., Chen Z.Z, "Single ferromagnetic domain observed in single core-shell GaN/GaN:Mn micro-wire grown by metalorganic chemical vapor deposition",Superlattices and Microstructures,137, January 2020, 106321(SCI) Zhizhong Chen*, Chengcheng Li, Fei Jiao,Study on 3D thermal transport in micro-LEDs on GaN substrate at the level of kW/cm2,IEEE proceedings,2019, 978-1-7281-5756-6/19,pp. 201–205. (EI) J. Nie, Y. Wang, S. Li, Z. Chen, et al. "Multi-chip dynamic white light emitting diode with high level photobiological safety and good color fidelity," IEEE proceedings ,2019, 978-1-7281-5756-6/19,pp. 180–184.(EI) Yiyong Chen, Zhizhong Chen, Shengxiang Jiang, Chengcheng Li,Yifan Chen, Jinglin Zhan,Xiangning Kang, Fei Jiao, Guoyi Zhang and Bo Shen;Fabrication of nano-patterned sapphire substrates by combining nanoimprint lithography with edge effects,CrystEngComm, 2019, 21,1794。(SCI) C. C. LI, J. L. ZHAN, Z. Z. CHEN, F. JIAO, Y. F. CHEN, Y. Y.CHEN, J. X. NIE, X. N. KANG, S. F. LI, Q. WANG,G. Y. ZHANG, AND B. SHEN,Operating behavior of micro-LEDs on a GaN substrate at ultrahigh injection current densities, Opt.Express 2019, 27(16) ,A1146.(SCI) C. C. LI, Z. Z. CHEN, F. JIAO, J. L. ZHAN, Y. F. CHEN, Y. Y.CHEN, J. X. NIE, X. N. KANG, S. F. LI, Q. WANG,G. Y.ZHANG, AND B. SHEN ,Effects of interfaces and current spreading on the thermal transport of micro-LEDs for kA-per-square-cm current injection levels, RSC Adv. 2019, 9, 24203. (SCI) J.X.Nie,Z.Z.Chen*,F.Jiao et al., Tunable LED Lighting with Five Channels of RGCWW for High Circadian and Visual Performances, IEEE Photonics Journal, 2019, 11(6),8201512(SCI) Z.Z.Chen, C.C.Li,, F.Jiao, Q.Q.Jiao, J.L.Zhan, Y.B.Tao, S.Y.Wang, X.N.Kang, G.Y.Zhang, B.Shen,Operation behavior under extremely high injection level for GaN-based micron LED, IEEE proceedings 978-1-7281-3/18: 169-172(2018).(EI) Jinglin Zhan, ZhizhongChen*,Qianqian Jiao, ,JunzeLi, ShengxiangJiang, YulongFeng,YifanChen, TongjunYu, Bo Shen, GuoyiZhang;Investigation on strain relaxation distribution in GaN-based μLEDs by Kelvin probe forcemicroscopy and micro-photoluminescence,Optics Express, 2018, 26(5):5265.(SCI) Yulong Feng , Zhizhong Chen* , Shuang Jiang , Chengcheng Li , Yifan Chen ,Jinglin Zhan , Yiyong Chen , Jingxin Nie , Fei Jiao , Xiangning Kang , Shunfeng Li ,Tongjun Yu , Guoyi Zhang and Bo Shen,Study on the Coupling Mechanism of the OrthogonalDipoles with Surface Plasmon in Green LED by Cathodoluminescence, Nanomaterials 2018, 8, 244. (SCI) Yulong Feng , Zhizhong Chen* , Shuang Jiang , Chengcheng Li , Yifan Chen ,Jinglin Zhan , Yiyong Chen , Jingxin Nie , Fei Jiao , Xiangning Kang , Shunfeng Li ,Tongjun Yu , Guoyi Zhang and Bo Shen, ,Effect ofdipole polarizationorientation onsurface plasmon coupling with green emission quantum wellsby cathodoluminescence, RSC Adv. 2018, 8, 16370-16377 (SCI) Y.F.Chen,Z.Z.Chen*,F.Jiao et al., Study on GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates by MOCVD, CrystEngComm, 2018, 20, 6811 - 6820 (SCI) Q. Q. Jiao, Z. Z. Chen*, Y. L. Feng, S. Zhang, S. F. Li, S. X. Jiang, J. Z. Li, Y. F. Chen, T. J. Yu, X. N. Kang, E. Gu, B. Shen, and G. Y. Zhang, Modification of far-field radiation pattern by shaping InGaN/GaN nanorods, Appl. Phys. Lett. 110, 052103 (2017) (SCI) Jinglin Zhan, ZhizhongChen*,Qianqian Jiao1, Yulong Feng1, Chengcheng Li1, YifanChen1, Fei Jiao2, Xiangning Kang1, Shunfeng Li3, TongjunYu1, GuoyiZhang1,3, Bo Shen 1,Study on Strain Relaxation Distribution in GaN-based μLEDs by Kelvin Probe Force Microscopy, Phys.Sol.Stat.C, 2017,14,1700222(EI). Jiang, Shuang; Chen, Zhizhong*;“The Coupling Behavior ofMultiple Dipoles and Localized Surface Plasmons in Ag Nanoparticles Array” Plasmonics,11:125–130(2016) (SCI) Jiang, Shengxiang, Chen, Zhizhong*;“Study on Light Extraction from GaN-based Green Light-Emitting Diodes Using Anodic Aluminum Oxide Pattern and Nanoimprint Lithography” Scientific Reports | 6:21573,(2016) (SCI) Qianqian Jiao , Zhizhong Chen * ,“The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays”Nanoscale Research Letters (2016) 11:340 (SCI) J.Z.Li, Z.Z.Chen,* "The anti-surfactant effect of silane on the facets-controlled growth of GaN nanorods by MOCVD Superlattices and Microstructures (2016) 96: 234-240 (SCI) Jiang Shengxiang, Chen Zhizhong*, et al. ”Study on morphology and shape control of volcano patterned sapphire substrates fabricated by imprinting and wet etching”,CrystEngComm, 2015, 17, 3070 – 307 (SCI) Ma, J.; Chen, Z. Z.*; Jiang, S.,"Pd/In/Ni/Au contact to N-polar n-type GaN fabricated by laser lift-off",APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 119 (1) 133-139 (2015)(SCI) "Fabrication and effects of Ag nanoparticles hexagonal arrays in green LEDs by nanoimprint," Jiang, Shuang; Chen, Zhizhong*; IEEE Photonics Technology Letters, VOL. 27, NO. 13, JULY 1, 1363( 2015)(SCI) Li Jun-Ze, Tao Yue-Bin, Chen Zhi-Zhong*, Jiang Xian-Zhe, Fu Xing-Xing, Jiang Shuang, Jiao Qian-Qian, Yu Tong-Jun, Zhang Guo-YiSilane controlled three dimensional GaN growth and recovery stages on cone-shape nanoscale patterned sapphire substrate by MOCVD, CrystEngComm, 2015, 17, 4469–4474 (SCI) Q. Q. Jiao, Z. Z. Chen,* J. Ma, S. Y. Wang, Y. Li, S. Jiang, Y. L. Feng, J. Z. Li, Y. F.Chen, T. J. Yu, S. F. Wang, G. Y. Zhang, P. F. Tian, E. Y. Xie, Z. Gong, E. D. Gu, and M. D. Dawson, "Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2", OPTICS EXPRESS,Vol. 23, No. 13 , 16565(2015)(SCI)

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