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个人简介

2013年至今 北京大学物理学院量子材料科学中心 研究员、副教授、博士生导师 2018年至今 北京量子信息科学研究院 兼聘研究员 2018年至今 北京轻元素量子材料研究院 兼聘研究员 2019年至今 纳米器件物理与化学教育部重点实验室 副主任

研究领域

(1) 低维量子材料、低维复合结构的量子输运性质表征与应用研究; (2) 低维拓扑材料的量子输运表征; (3) 低维磁性材料的物态研究

近期论文

查看导师新发文章 (温馨提示:请注意重名现象,建议点开原文通过作者单位确认)

Shimin Cao, Chuanwu Cao, Shibing Tian and Jian-Hao Chen*, “Evidence of tunable magnetic coupling in hydrogenated graphene”, Physical Review B, in press (2020) Shili Yan, Hai Huang, Zhijian Xie, Guojun Ye, Xiao-Xi Li, Takashi Taniguchi, Kenji Watanabe, Zheng Han, Xianhui Chen*, Jianlu Wang*, Jian-Hao Chen*, “Reliable nonvolatile memory black phosphorus ferroelectric field effect transistors with van der Waals buffer”, ACS Applied Materials & Interfaces 11, 42358 (2019) Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang*, Huaihong Guo, Chengbing Qin*, Liantuan Xiao, Jing Zhang, Jian-Hao Chen*, Zheng Han*, Zhidong Zhang, "Gate tunable giant anisotropic resistance in ultra-thin GaTe", Nature Communications 10, 2302 (2019) Junchao Ma, Qiangqiang Gu, Yinan Liu, Jiawei Lai, Peng Yu, Xiao Zhuo, Zheng Liu, Jian-Hao Chen*, Ji Feng*, and Dong Sun*, "Nonlinear Photoresponse of Type-II Weyl Semimetals", Nature Materials 18, 476 (2019) Cover article for Nature Materials 18, issue 5, May 2019. “Lighting up Weyl semimetals”, News and Views, Nature Materials 18, 428 (2019). Chuanwu Cao, Xin Liu, Xiao Ren, Xianzhe Zeng, Dong Sun, Shuyun Zhou, Yang Wu, Yuan Li, Jian-Hao Chen*, "Barkhausen effects in the first order structural phase transition in type-II Weyl semimetal MoTe2", 2D Materials 5, 044003 (2018) “Benchtop cosmology exploits solid-states systems”, Physics World Characterization and Modeling (Media Report), November 10, 2018. Chaoyi Cai, Jian-Hao Chen*, “Electronic transport properties of Co cluster decorated graphene”, Chinese Physics B 27(6), 067304 (2018) “In situ measurements reveal cobalt-decorated graphene behaviour”, Physics World Research Update (Media Report), June 28, 2018. Yinan Liu, Qiangqiang Gu, Yu Peng, Shaomian Qi, Na Zhang, Yinong Zhang, Xiumei Ma, Rui Zhu, Lianming Tong, Ji Feng*, Zheng Liu* and Jian-Hao Chen*, “Raman Signatures of Broken Inversion Symmetry and In-plane Anisotropy in Type-II Weyl Semimetal Candidate TaIrTe4”, Advanced Materials 30, 1706402 (2018) Invited to show case the result in 2018 China National Science and Technology Week and Beijing Science and Technology Week, May 19, 2018. Xin Liu*, Zhiran Zhang, Chaoyi Cai, Shibing Tian, Satya Kushwaha, Hong Lu, Takashi Taniguchi, Kenji Watanabe, Robert J Cava, Shuang Jia* and Jian-Hao Chen*, “Gate tunable magneto-resistance of ultra-thin WTe2 devices”, 2D Materials 4, 021018 (2017) Shibing Tian, Pengjie Wang, Xin Liu, Junbo Zhu, Hailong Fu, Takashi Taniguchi, Kenji Watanabe, Jian-Hao Chen* and Xi Lin*, “Nonlinear transport of graphene in the quantum Hall regime”, 2D Materials 4, 015003 (2016) J. -H. Chen, G. Autès, N. Alem, F. Gargiulo, A. Gautam, M. Linck, C. Kisielowski, O. V. Yazyev, S. G. Louie and A. Zettl, “Growth of a Linear Defect in Graphene for Gate-Tunable Valley Filtering”, Physical Review B 89, 121407(R) (2014) J. -H. Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer,“Origin of logarithmic resistance correction in graphene Reply”, Nature Physics 8, 353(2012) J. -H. Chen, L. Li, W. G. Cullen, E. D. Williams, M. S. Fuhrer, “Tunable Kondo Effect in Graphene with Defects”, Nature Physics 7, 535(2011) (ESI高引用文章) “New way to control magnetic properties of graphene discovered”, Science Daily, April 18, 2011. “Scientists make magnetic new graphene discovery”, PhysOrg.com, April 18, 2011. J. -H. Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, “Defect Scattering in Graphene”, Physical Review Letters 102, 236805 (2009) (ESI高引用文章) J. -H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2”, Nature Nanotechnology 3, 206 (2008) (ESI高引用文章) “Graphene could be the new silicon”, Scientific American News Blog, March 31, 2008. “Is Graphene the new silicon?”, NSF Press Release 08-048, March 27, 2008. “Carbon could enable fastest chips”, by Colin Johnson, EE Times, March 25, 2008. J. -H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, M. Ishigami, “Charged Impurity Scattering in Graphene”, Nature Physics 4, 377 (2008) (ESI高引用文章)

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