近期论文
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入选ESI高引用论文目录：（*通讯作者论文）
1. N. Xu , L.F. Liu, X. Sun, X.Y. Liu, D.D. Han, Y. Wang, R.Q. Han, J.F. Kang*, and B. Yu, “Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories”, Appl. Phys. Lett., 92, p.232112, JUN 9 2008
2. B. Gao, B. Sun, H.W. Zhang, L.F. Liu, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory”, IEEE ELECTRON DEVICE LETTERS, 30 (12): 1326-1328 DEC 2009
3. S. Yu, H.-Y. Chen, B. Gao, J. Kang, and H.-S. P. Wong, “HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three- Dimensional Cross-Point Architecture,” ACS Nano, vol. 7, pp. 2320-2325, Mar 2013.
近3年发表的高影响因子文章目录：（*通讯作者论文）
1. B. Gao, Y.J. Bi, H-Y. Chen, R. Liu, P. Huang, B. Chen, L.F. Liu, X.Y. Liu, S.M. Yu, H.-S. Philip Wong, J.F. Kang*, “Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems”, ACS NANO Vol.8(7), pp. 6998-7004, JUL 2014
2. B. Chen, X.P Wang, B. Gao, Z. Fang, J.F. Kang*, Lifeng Liu, X.Y. Liu, Guo-Qiang Lo and Dim-Lee Kwong, “Highly Compact (4F2) and Well Behaved Nano-Pillar Transistor Controlled Resistive Switching Cell for Neuromorphic System Application”, SCIENTIFIC REPORTS Vol.4, No.6863, OCT 31 2014
3. S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, and H. S. Wong, “A low energy oxide-based electronic synaptic device for neuromorphic visual systems with tolerance to device variation,” Adv Mater, vol. 25, pp. 1774-1779, Mar 25, 2013.
4. S. Yu, H.-Y. Chen, B. Gao, J. Kang, and H.-S. P. Wong, “HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three- Dimensional Cross-Point Architecture,” ACS NANO, vol. 7, pp. 2320-2325, Mar 2013.
5. H. Tian, H.-Y. Chen, B. Gao, S. Yu, J. Liang, Y. Yang, D. Xie, J. Kang, T.-L. Ren, Y. Zhang, and H. S. P. Wong, “Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode,” Nano Lett., vol. 13, pp. 651-657, FEB 2013.
IEDM、VLSI等国际旗舰会议论文目录：
1. H-Yu Chen, B. Gao, H.T. Li, R. Liu, P. Huang, Z. Chen, B. Chen, F.F. Zhang, L. Zhao, Z.Z. Jiang, L.F. Liu, X.Y. Liu, J.F. Kang*, S.M. Yu, Y. Nishi, H.-S. Philip Wong, “Towards High-Speed, Write-Disturb Tolerant 3D Vertical RRAM Arrays”, 2014 Symposium on VLSI technology (VLSI-T 2014), p.196
2. Y.X. Deng, H-Y. Chen, B. Gao, S. Yu, S-C. Wu, L. Zhao, B. Chen, Z. Jiang, T-H Hou, Y. Nishi, J.F. Kang*, and H.-S. Philip Wong, “Design and Optimization Methodology for 3D RRAM Arrays”, Tech. Dig of IEDM2013, p.629
3. P. Huang, B. Chen, Y.J. Wang, F. F. Zhang, L. Shen, R. Liu, L. Zeng, G. Du, X. Zhang, B. Gao, J.F. Kang*, X.Y. Liu, X.P. Wang, B.B. Weng, Y.Z. Tang, G.-Q. Lo, D.-L. Kwong, “Analytic Model of Endurance Degradation and Its Practical Applica-tions for Operation Scheme Optimization in Metal Oxide Based RRAM”, Tech. Dig of IEDM2013, p.597
4. P. Huang, X.Y. Liu*, W.H. Li, Y.X. Deng, B. Chen, Y. Lu, B. Gao, L. Zeng, K.L. Wei, G. Du, X. Zhang, and J.F. Kang*, “A Physical Based Analytic Model of RRAM Operation for Circuit Simulation”, Tech. Dig of IEDM2012, p.605
5. S. Yu, B. Gao, P. Huang, J.F. Kang*, and H.-S. Philip Wong*, “HfOx Based Vertical Resistive Random Access Memory for Cost-Effective 3D Cross-Point Architecture without Cell Selector”, Tech. Dig of IEDM2012, p.497
6. S. Yu, B. Gao, Z. Fang, H.Y. Yu, J.F. Kang, and H.-S. Philip Wong*, “A Neuromorphic Visual System Using RRAM Synaptic Devices with Sub-pJ Energy and Tolerance to Variability: Experimental Characterization and Large-Scale Modeling”, Tech. Dig of IEDM2012, p.239
7. H-Y. Chen, H. Tian, B. Gao, S. Yu, J. Liang, J.F. Kang, Y.G. Zhang, T-L. Ren, and H.-S. Philip Wong, “Electrode/Oxide Interface Engineering by Inserting Single-Layer Graphene: Application for HfOx–Based Resistive Random Access Memory”, Tech. Dig of IEDM2012, p.489
8. B. Gao, *J.F. Kang, Y.S. Chen, F.F. Zhang, B. Chen, P. Huang, L.F. Liu, X.Y. Liu, Y.Y. Wang, X.A. Tran, Z.R. Wang, H.Y. Yu, Albert Chin, “Oxide-Based RRAM: Unified Microscopic Principle for Unipolar and Bipolar Switching”, Tech. Dig of IEDM2011, p.417
9. B. Chen, Y. Lu , B. Gao, Y.H. Fu, F.F. Zhang, P. Huang, Y.S. Chen, L.F. Liu, X.Y. Liu, *J.F. Kang, Y.Y. Wang, Z. Fang, H.Y. Yu, X. Li, N. Singh, G. Q. Lo, D. L. Kwong, “Physical Mechanisms of Endurance Degradation in TMO-RRAM”, Tech. Dig of IEDM2011, p.283
10. X.A. Tran, B. Gao, J.F. Kang, X. Wu, L. Wu, Z. Fang, Z.R. Wang, K.L. Pey, X.P. Wang, Y.C. Yeo, A.Y. Du, B.Y. Nguyen, M.F. Li, H.Y. Yu, “Self-Rectifying and Forming-Free Unipolar HfOx Based High Performance RRAM Built by Fab-Avaialbe Materials", Tech. Dig of IEDM2011, p.713
11. X.A. Tran, B. Gao, J.F. Kang, L. Wu, Z.R. Wang, Z. Fang, K.L. Pey, Y.C. Yeo, A.Y. Du, B.Y. Nguyen, M.F. Li, and H.Y. Yu, “High Performance Unipolar AlOy/HfOx/Ni based RRAM Compatible with Si Diodes for 3D Application”, 2011 Symposium on VLSI technology (VLSI-T 2011), (Kyoto, Japan, June,14-16, 2011), p.44
12. B. Gao, H. W. Zhang, S.M. Yu, B. Sun, L. F. Liu, X.Y. Liu, Y. Wang, R.Q. Han, *J.F. Kang, B. Yu, Y.Y. Wang, Oxide-Based RRAM: Uniformity Improvement Using A New Material-Oriented Methodology. 2009 Symposium on VLSI technology, p.30
13. B. Gao, S. Yu, N. Xu, L.F. Liu, B. Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, B. Yu, Y.Y. Wang, “Oxide-Based RRAM Switching Mechanism: A New Ion Transport Recombination Model”, Tech. Dig of IEDM2008, p.563
14. N. Xu, B. Gao, L.F. Liu, Bing Sun, X.Y. Liu, R.Q. Han, J.F. Kang*, and B. Yu, “A unified physical model of switching behavior in oxide-based RRAM”, 2008 Symposium on VLSI Technology (VLSI-T2008), p.100
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