个人简介

B.S., University of Puerto Rico, Rio Piedras M.A., Ph.D., The Johns Hopkins University

研究领域

Inorganic Chemistry and Molecular Beam Epitaxy

Maria Tamargo conducts research on Molecular Beam Epitaxy (MBE) growth and characterization of semiconductor materials for photonic and electronic applications. Using a dual chamber MBE system, her group investigates III-V and II-VI semiconductor materials and their nanostructures. Characterization methods include photoluminescence, Hall effect, capacitance-voltage (C-V) and current-voltage (I-V) measurements, single and double crystal x-ray diffraction, Nomarski microscopy and scanning electron microscopy (SEM). Currently, the principal focus of the research is on wide bandgap II-VI compounds for visible light emitting devices. Her group at City College is investigating the growth and properties of a new family of wide bandgap II-VI semiconductors, ZnCdMgSe, grown lattice-matched to InP substrates by MBE. By optimizing the growth conditions they have reduced defect densities to the level of other more well-known II-VI compounds grown on GaAs. These new alloys and their heterostructures possess properties (band structures, lattice constants, band offsets and doping) that are attractive and offer advantages for the design of improved visible semiconductor lasers and LEDs. These devices are of interest for optical recording, displays and communications applications. Other areas of research include, saturable Bragg reflectors (SBR) made of III-V materials for laser mode locking, hexagonal II-VI structures for visible emitters, selective area epitaxy of CdTe detector array-like structures and hybrid semiconductor/molecular aggregates for photonic applications. Professor Tamargo joined the Chemistry department at City College in 1993 and is a member of the CUNY doctoral faculty in both Chemistry and Physics. She had previously been a Member of Technical Staff at Bellcore in Red Bank, NJ where she led a program on II-VI materials growth by MBE. Before that, she was at AT&T Bell Labs in Reading, PA and in Murray Hill, NJ, where she worked on Liquid Phase Epitaxy (LPE) of GaAlAs lasers and InGaAsP Avalanche Photodectors (APDs) for optical communications systems. She is a member of the CUNY Center for Advanced Technology (CAT) on Photonic Materials and Applications and of the Center for Analysis of Structures and Interfaces (CASI) at City College. She is married and has two children, Nicolas, 12, and Marcela, 10, and lives in Teaneck, NJ.

近期论文

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Red-Green-Blue (R-G-B) Photopumped Lasing from ZnCdMgSe/ZnCdSe QW Laser Structures Grown on InP, L. Zeng, Y. Guo, B.X. Yang, A. Cavus, W. Lin, Y. Y. Luo, Y. C. Chen and M. C. Tamargo, Appl. Phys. Lett., 72, 3136 (1998). Dynamics of Recombination Enhanced Defect Reaction in a ZnCdSe Single Quantum Well, M. Tang, K. Shum, L. Zeng, and M. C. Tamargo, Appl. Phys. Lett., 73, 1541 (1998). � Defect Reduction of ZnxCdyMg1-x-ySe Based Structures Grown on InP by Using Zn Irradiation of the III-V Surface, L. Zeng, S. P. Guo, Y. Y. Luo, W. Lin, M. C. Tamargo, H. Xing, and G. S. Cargill, III, J. Vac. Sci. Technol. B17, 1255 (1999). 揘ew Materials for Wide Bandgap II-VI Visible Emitters� M. C. Tamargo, in Optoelectronic Materials and Their Applications (Including Solar Cells), eds. F. Leccabue, M. Sanchez and A. Escobosa, Edizione ETS, Pisa (1999). High Crystalline Quality ZnBeSe Grown by Molecular Beam Epitaxy with Be-Zn Co-irradiation, S. P. Guo, Y. Luo, W. Lin, O. Maksimov, M. C. Tamargo, I. Kuskovsky, C. Tian, G. F. Neumark, J. Crystal Growth 208, 205 (2000). � Molecular Beam Epitaxy Growth and Nitrogen Doping of ZnSeTe Alloys Grown on InP Substrates, W. Lin, B. X. Yang, S. P. Guo, A. Elmoumni, F. Fernandez, M. C. Tamargo, Appl. Phys. Letters 75, 2608 (1999). � Asymetric Luminescence Line Shape and Exciton Energy Relaxation in ZnMgCdSe Epilayers, J. X. Shen, R. Pittini, Y. Oka, S. P. Guo and M. C. Tamargo, Appl. Phys. Letters 75, 3494 (1999). Study of Exciton Localization in ZnCdSe Quantum Wells, P. Diaz-Arencibia, L. M. Hernandez-Ramirez, M. C. Tamargo, O. de Melo and I. Hernandez-Calderon, in 揙ptoelectronic Materials and Their Applications (Including Solar Cells)�, eds. F. Leccabue, M. Sanchez and A. Escobosa, Edizioni ETS, Pisa (1999). � Persistent Photoconductivity in Ga d-doped ZnSe, G. J. Hu, N. Dai, L. Y. Chen, M. C. Tamargo, Solid State Commun. (1999). � Photoluminescence Properties of Intra-Well Exciton Migration in ZnCdSe Quantum Wells, P. Diaz-Arencibia, I. Hernandez-Calderon, L. M. Hernandez-Ramirez, M. C. Tamargo, Microelectronics Journal, accepted (2000). In-Situ Device Processing Using Shadow Mask Selective Area Epitaxy and In-Situ Metallization, Y. Luo, L. Zeng, W. Lin, B. Yang, M. C. Tamargo, Y. M. Strzhemechny and S. A. Schwarz, J. Electronic Mat., accepted (2000). Growth and Characterization of Hexagonal (Zn,Mg)(S,Se) Bulk Substrates, W. Lin, M. C. Tamargo, J. Steiner, H. Y. Wei, W. Sarney, L. Salamanca-Riba, B. J. Fitzpatrick, J. Crystal Growth, accepted (2000). Wide Bandgap II-VI Materials for Red-Green-Blue Emitters, M. C. Tamargo, W. Lin, S. P. Guo, Y. Y. Luo, O. Maksimov, Proceedings of the Latin American Congress for Surface Science and Its Applications (CLACSA-9), accepted (2000). (Invited) Growth and Characterization of patterned ZnCdSe Structures For Application in Integrated R-G-B II-VI Light Emitting Diodes, Y. Luo, A. Elmoumni, S. P. Guo, M. C. Tamargo, S. Kelly, H. Ghaemi, V. Asnin, M. Tomkiewicz, F. H. Pollak, Y. C. Chen, J. Vac. Sci. Technol. B, accepted (2000). � Temperature Dependence of Exciton Localization in ZnCdSe Quantum Wells, P. Diaz-Arencibia, I. Hernandez-Calderon, L. M. Hernandez-Ramirez, M. C. Tamargo, J. Vac. Sci. Technol. B, accepted (2000). � p-Type Doping of (Zn,Mg,Cd)Se Alloys Using and rf-Discharge Nitrogen Plasma, W. Lin, S. P. Guo, M. C. Tamargo, J. vac. Sci. Technol. B, accepted (2000). � Full-Color Light Emitting Diodes from ZnCdMgSe/ZnCdSe Quantum Well Structures Grown on InP, M. C. Tamargo, W. Lin, S. P. Guo, Y. Luo, Y. Guo and Y. C. Chen, J. Crystal Growth, accepted (2000). (Invited) Photoluminescence Characterization of MBE Grown ZnBeSe, I. Kuskovsky, C. Tian, G. F. Neumark, S. P. Guo, and M. C. Tamargo, J. Crystal Growth, accepted (2000). � MBE Growth and Nitrogen Doping of Hexagonal ZnSe and ZnCdSe/ZnSe Quantum Well Structures on Hexagonal ZnMgSSe Bulk Substrates, W. Lin, M. C. Tamargo, H. Y. Wei, W. Sarney, L. Salamanca-Riba, B. J. Fitzpatrick, J. Vac. Sci. Technol. B, submitted. Enhancement of p-type Doping of ZnSe Using a Modified (N + Te) d-doping Technique, W. Lin, S. P. Guo, M. C. Tamargo, I. Kuskovsky, C. Tian, G. F. Neumark, Appl. Phys. Letters, submitted.