个人简介
Ph.D. in Electrical Engineering, Stanford University
B.S. & M.S., Electrical Engineering, Michigan State University, 1974 & 1975
Ph.D., Electrical Engineering, Stanford University, 1980
研究领域
Polymer Chemistry
Prof. Schwarz is co-director of the Garcia Center for Polymers at Engineered Interfaces.
近期论文
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N. Garcia, A. Damask, and S. Schwarz, "Physics for Computer Science Students," Springer-Verlag, New York, 2nd Ed., to be published in 1997
X. Zheng, B.B. Sauer, J.G. Van Alsten, S.A. Schwarz, M.H. Rafailovich, J. Sokolov, and M. Rubinstein, "Reptation Dynamics of a Polymer Melt Near an Attractive Solid Interface," Phys. Rev. Lett. 74, 407 (1995)
D. Gersappe, D. Irvine, A.C. Balazs, Y. Liu, J. Sokolov, M.H. Rafailovich, S. Schwarz, and D.G. Peiffer, "The Use of Graft Copolymer to Bind Immiscible Blends," Science, 265, 1072 (1994)
S.A. Schwarz, "Secondary Ion Mass Spectrometry," entry in the Encyclopedia of Advanced Materials (Pergamon Press, Oxford, 1994)
S.A. Schwarz, "Coaxial Hardware Reliability: Issues and Priorities for the Hybrid Fiber/Coax Network," Bellcore Special Report SR-3288, Issue 1, October, 1994
S.A. Schwarz, B.J. Wilkens, M.A.A. Pudensi, M.H. Rafailovich, J. Sokolov, X. Zhao, W. Zhao, X. Zheng, T.P. Russell, and R.A.L. Jones, "Studies of Surface and Interface Segregation in Polymer Blends by Secondary Ion Mass Spectrometry," Molec. Phys. 76, 937 (1992)
D.M. Hwang, S.A. Schwarz, T.S. Ravi, R. Bhat, and C.Y. Chen, "Strained-Layer Relaxation in fcc Structures via the Generation of Partial Dislocations," Phys. Rev. Lett. 66, 739 (1991)
S.A. Schwarz, "Application of a Semi-Empirical Sputtering Model to Secondary Electron Emission," J. Appl. Phys. 68, 2382 (1990)
S.A. Schwarz, C.J. Palmstrom, C.L. Schwartz, T. Sands, L.G. Shantharama, J.P. Harbison, L.T. Florez, E.D. Marshall, C.C. Han, S.S. Lau, L.H. Allen, and J.W. Mayer, "Backside Secondary Ion Mass Spectrometry Investigation of Ohmic and Schottky Contacts on GaAs," J. Vac. Sci. Tech. A8, 2079 (1990)
S.A. Schwarz and S.E. Russek, "Semi-Empirical Equations for Electron Velocity in Silicon: Part II -- MOS Inversion Layer," IEEE Trans. Elec. Dev. 30, 1634 (1983)