Willis, Brian - University of Connecticut - Chemical & Biomolecular Engineering

个人简介

2002-2008 Assistant Professor of Chemical Engineering, University of Delaware. 2001-2002 Agere Systems, High Speed Devices and Interfaces Laboratory, New Jersey. 1999-2001 Bell Laboratories (Lucent Technologies), Silicon Device Research Laboratory, New Jersey. 1993-1999 Graduate Research Assistant, Massachusetts Institute of Technology

近期论文

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Han Wang, Xiaoqiang Jiang, Kan Fu, and Brian. G. Willis*, Nucleation, Hydroxylation, and Crystallization Effects in ALD SrO, J. Phys. Chem. C, 2013, v.117, pp. 11578?11583 Hsu, I. J.; Kimmel, Y. C.; Jiang, X. G.; Willis, B. G.; Chen, J. G., Atomic layer deposition synthesis of platinum-tungsten carbide core-shell catalysts for the hydrogen evolution reaction. Chemical Communications 2012, 48, (7), 1063-1065. Wang, H.; Jiang, X. Q.; Willis, B. G., Real-time spectroscopic ellipsometric investigation of adsorption and desorption in atomic layer deposition: A case study for the strontium bis(tri-isopropylcyclopentadienyl)/water process. Journal of Vacuum Science & Technology A 2012, 30, (1). Weiland, C. R.; Yang, L.; Doren, D. J.; Menning, C. A.; Skliar, D.; Willis, B. G.; Chen, J. G. G.; Opila, R. L., Binding of styrene on silicon (111)-7 x 7 surfaces as a model molecular electronics system. Journal of Vacuum Science & Technology A 2012, 30, (3). Hsu, I. J.; Kimmel, Y. C.; Jiang, X.; Willis, B. G.; Chen, J. G., Atomic Layer Deposition Synthesis of Platinum-Tungsten Carbide Core-Shell Catalysts for the Hydrogen Evolution Reaction, Chem. Commun. 2012, 48, p. 1063-1065. Hsu, I. J.; Hansgen, D. A.; McCandless, B. E.; Willis, B. G.; Chen, J. G., Atomic Layer Deposition of Pt on Tungsten Monocarbide (WC) for the Oxygen Reduction Reaction, J. Phys. Chem. C 2011, 115, 3709. Wang, H.; Jiang, X.; Willis, B. G., Real-time Spectroscopic Ellipsometric Investigation of Adsorption and Desorption in Atomic Layer Deposition, J. Vac. Sci. Technol. A 30(1), (2011). Willis, B. G.; Zhang, C. B.; Wielunski, L., Formation of Strontium Template on Si(1 0 0) by Atomic Layer Deposition, Appl Surf Sci 2011, 257, 4826. D. B. Skliar and B. G. Willis, “The role of dangling bonds in H2O induced oxidation of Si(100)-2×1,” J. Phys. Chem. C, v. 112, p. 9434 (2008). B. G. Willis and A. Mathew, “Growth of ordered SrO layers on Si(100) using metal-organic surface reactions,” J. Vac. Sci. Technol. A, v. 26, p. 83 (2008).