Pan, Xiaoqing - University of California, Irvine - Department of Chemical Engineering and Materials Science

个人简介

Xiaoqing Pan is a professor and Henry Samueli Endowed Chair in Engineering, at UC Irvine in The Henry Samueli School of Engineering’s Department of Chemical Engineering & Materials Science and the School of Physical Sciences Department of Physics & Astronomy. He is also the inaugural director of the Irvine Materials Research Institute (IMRI). Previously, Pan was the endowed Chair Professor (Richard F. and Eleanor A. Towner Professor of Engineering) in the University of Michigan’s Department of Materials Science and Engineering. He was also Director of Electron Microbeam Analysis Laboratory at the University of Michigan, Ann Arbor. He received his bachelor’s and master’s degrees in physics from Nanjing University, and his doctorate in physics (1991) from the University of Saarland, Germany. After postdoctoral research at the Max-Planck Institut für Metallforschung in Stuttgart, he joined the faculty of MS&E at Michigan as an associate professor without tenure in 1996, and was promoted to professor with tenure in 2004. Pan has received many awards, including the National Science Foundation’s CAREER Award and the Chinese NSF’s Outstanding Young Investigator Award. He was awarded a named Cheung-Kong Distinguished Visiting Professorship (Nanjing University 2008 - 2010), and was also awarded the National Distinguished Professorship (China 1000 Talent Program) as Visiting Professor at Nanjing University in 2009. He was an overseas member of the Scientific Review Board, Chinese Academy of Science, 2005-2010. He has been serving as a member on the Advisory Committee of the Overseas Chinese Affairs Office of the State Council, China, since 2011. He is also a member of the Physical Sciences Panel of the Hong Kong Research Grants Council (RGC) since 2013. Pan was elected to be a Fellow of the American Ceramic Society in 2011, a Fellow of the American Physical Society in 2013, and a Fellow of the Microscopy Society of America. Pan has published over 200 peer-reviewed scientific papers in scholarly high impact factor journals, including e.g. Nature, Science, Nature Materials, Nature Communications, Physical Review Letters, Nano Letters, and Advanced Materials. His work has been cited over 7000 times with his highest single paper citation of 639 and his publication h-factor is 47.

研究领域

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Pan's research interests center on understanding the atomic-scale structure-property relationships of advanced functional materials, including oxide electronics, nanostructured ferroelectrics and multiferroics, and catalysts. He is recognized internationally for his work in materials physics and electron microscopy that have led to the discovery of new properties and novel functionalities in technologically important materials. His pioneering contributions include the development of methods to quantitatively map the electrical polarization in ferroelectrics at atomic resolution, and methods to uncover the effects of boundary conditions on ferroelectricity, including polarization mapping, first observation of ferroelectric vortices, and dynamic behaviors of ferroelectric domains during electrical switching under applied electric field in TEM. Polarization vortex arrays with electric flux closure, similar to the magnetization patterns ubiquitous to ferromagnetic materials, were directly observed for the first time in a ferroelectric heterostructure, which was made possible by sub-Ångström resolution TEM in combination with a unique image processing technique developed in Pan’s group to map the polarization [Nelson et al., Nano Letters 11, 828–834 (2011)]. The existence of the spontaneous polarization vortices at the ferroelectric interfaces can fundamentally change the switching mechanism of domains in ferroelectric memories and spintronic devices based on multiferroic materials due to the unique polarization configurations near the vortices. This work represents the forefront of spatially resolved polarization “imaging,” enabling the effect of interfaces and defects on the polarization in ferroelectric heterostructures relevant to ferroelectric device structures to be seen.