Xie, Ya-Hong - University of California, Los Angeles

个人简介

Ya-Hong Xie was born in Beijing, China. He entered the Physics Department of Peking University in 1977. After one and a half years, he transferred to the Physics Department of Purdue University. He obtained the B.S. degree in physics from Purdue University in 1981, and the M.S. and Ph. D degrees in electrical engineering from UCLA in 1983 and 1986, respectively. His Ph. D thesis research was on Si Molecular Beam Epitaxy under the guidance of Prof. Kang L. Wang. Following graduation, Ya-Hong Xie joined AT&T Bell Laboratories (later became Bell Laboratories, Lucent Technologies). From 1986 until 1999, he had been a member of the technical staff at Bell Laboratories. His research activities during this period included impurity center mediated luminescence in Si (e.g. Er doped Si), light emitting porous Si, GeSi/Si molecular beam epitaxy, dislocation kinetics in relaxed GeSi/Si heterostructures, strain induced surface roughening in GeSi epitaxial thin films (also known as self-assembled quantum dots), fabrication of high mobility two-dimensional electron and hole gases in GeSi/Si, and the transport properties and device applications of various Si-based heterostructures. Ya-Hong Xie joined UCLA as a professor of Materials Science & Engineering in 1999. His current research interests include the fabrication of 2D electron system in strained Si, epitaxial growth of self-assembled quantum dots of III-V and group IV semiconductors, RF crosstalk isolation and substrate impedance engineering for mixed-signal IC applications, and novel devices centered around Si CMOS technology.

研究领域

Epitaxy of semiconductor nano-structures for achieving novel electronic and optoelectronic properties.

近期论文

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“Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates”, Jeehwan Kim, Jae Young Lee, Ya-Hong Xie, Thin Solid Films, in press (2008); “3-D Finite Element Simulation of a PCRAM Cell with a Novel Self-insulated Structure”, Ke Sun, Feng Wen and Ya-Hong Xie, submitted to J. Appl. Phys. (2008); “The proximity effect of the regrowth interface on two-dimensional electron density in strained Si”, J. Lie, T. M. Lu, J. Kim, K. Lai, D. C. Tsui, and Ya-Hong Xie Appl. Phys. Lett. 92, 112113 (2008); “Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes”, J. Liu, J.H. Kim, Y. H. Xie, T. M. Lu, K. Lai, and D. C. Tsui, Thin Solid Films, in press (2008); “A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates”, Jeehwan Kim, Biyun Li, and Ya-Hong Xie Appl. Phys. Lett. 91, 252108 (2007). “Germanium-on-SOI photo-detector based on an FET structure”, Subal Sahni, Eli Yablonovitch, J Liu and Y.H. Xie, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2007. “Microstructure Analysis of Epitaxially Grown Self-Assembled Ge Islands on Nanometer-Scale Patterned SiO2/Si Substrates by High-Resolution Transmission Electron Microscopy”, T.S. Yoon, H.M. Kim, K.B. Kim, D.Y. Ryu, T.P. Russell, Z.M. Zhao, J. Liu, and Y.H. Xie, J. Appl. Phys. v.102, 104306 (2007). “Monolithic integrated modulator on silicon for optical interconnects”, Shi B, Chang PS, Sun K, Xie YH, Radhakrishnan, Monbouquette HG, IEEE PHOTONICS TECHNOLOGY LETTERS 19 (2-4): 55-57 JAN-FEB 2007. “Capacitively induced high mobility two-dimensional electron gas in undoped Si/SiGe heterostructures with atomic-layer-deposited dielectric”, T.M. Lu, J. Liu, J. Kim, K. Lai, D.C. Tsui, and Y. H. Xie, Appl. Phys. Lett., 90, 182114 (2007). “Lateral arrangement of Ge self-assembled quantum dots on a partially relaxed SiGe buffer layer”, H.J. Kim, Y.H. Xie and K.L. Wang, Ch. 7, page 209 in “Lateral Alingnment of Epitaxial Quantum Dots” O.G. Schmidt, ed., Springer, Berlin (2007).