个人简介
马向阳，1969年12月生，1991年本科毕业于四川大学物理系半导体物理与器件专业，1994年和1998年在浙江大学材料系分别获得半导体材料工学硕士和工学博士学位。1998年9月进入浙江大学硅材料国家重点实验室工作，从事直拉单晶硅材料科学与技术以及硅基发光材料与器件的研究。2000年晋升副教授，2005年晋升教授。2004年入选国家教育部“新世纪优秀人才支持计划”。主持国家自然科学基金6项，作为主要骨干参与国家自然科学基金重点项目2项，863计划项目2项和国家科技重大科技计划项目1项。至2017年在国际刊物上发表SCI论文260余篇，被他引4000余次；以第一发明人获得发明专利20余项；2005年和2013年分别获得国家自然科学二等奖（排名第二和第五）；另外，获得省部级科技奖一等奖5项。
近期论文
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1. Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal
Peidong Liu, Xiangyang Ma*, Jinxin Zhang, Liben Li, and Duanlin Que, J. Appl. Phys. 87, 3669 (2000)
2. Formation of pnp bipolar structure by thermal donors in nitrogen- containing p-type Czochralski silicon wafers
Xiangyang Ma*, Xuegong Yu, Ruixin Fan, Deren Yang, Appl. Phys. Lett. 81, 496-498 (2002)
3.Rapid-thermal-processing-based intrinsic gettering for nitrogen-doped Czochralski silicon
Xiangyang Ma, Liming Fu, Daxi Tian, and Deren Yang, J. Appl. Phys. 98, 084502 (2005)
4.Oxygen precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon
Yuheng Zeng, Xiangyang Ma*, Daxi Tian, Deren Yang, J. Appl. Phys. 105, 093503 (2009)
5. Effects of heavy phosphorus-doping on mechanical properties of Czochralski silicon
Zhidan Zeng, Xiangyang Ma*, Jiahe Chen, Yuheng Zeng, Deren Yang, Yonggang Liu, J. Appl. Phys. 107, 123503 (2010)
6. Impact of rapid thermal processing on oxygen precipitation in heavily arsenic and antimony doped Czochralski silicon
Xinpeng Zhang, Chao Gao, Maoshen Fu, Xiangyang Ma*, Deren Yang, J. Appl. Phys. 113, 163510 (2013)
7. Effect of tin on point defects and oxygen precipitation in Czochralski silicon: Experimental and theoretical studies
Chao Gao, Xiangyang Ma*, Jianjiang Zhao, Deren Yang, J. Appl. Phys. 113, 093511 (2013)
8. Boron deactivation in heavily boron-doped Czochralski silicon during rapid thermal anneal: Atomic level understanding
Chao Gao, Yunhao Lu, Peng Dong, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 104, 032102 (2014)
9. Carbon effect on the survival of vacancies in Czochralski silicon during rapid thermal anneal
Jian Zhao, Peng Dong, Kang Yuan, Xiaodong Qiu, Junwei Zhou, Jianjiang Zhao, Xuegong Yu, Xiangyang Ma*, Deren Yang，J. Appl. Phys. 122, 045705 (2017)
10. Retarded oxygen diffusion in heavily phosphorus-doped Czochralski silicon: experiments and first-principles calculations
Chao Gao, ZhenhuiWang, Xingbo Liang, Daxi Tian, Hongyan Liu, Xiangyang Ma*, Deren Yang, J. Phys.: Condens. Matter 24, 495802 (2012)
11. Electrically pumped ZnO film ultraviolet random lasers on silicon substrate
Xiangyang Ma *, Peiliang Chen, Dongsheng Li, Yuanyuan Zhang, Deren Yang, Appl. Phys. Lett. 91, 251109 (2007)
12. Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si
Xiangyang Ma, Jingwei Pan, Peiliang Chen, Dongsheng Li, Deren Yang, Opt. Express. 17, 14426 (2009)
13. Electrically pumped ultraviolet random lasing from ZnO films: Compensation between optical gain and light scattering
Ye Tian, Xiangyang Ma*, Lu Jin, Deren Yang, Appl. Phys. Lett. 97, 251115 (2010)
14. Electrically pumped random lasing from the light-emitting device based on two-foldtandem SiO2/ZnO structure
Yunpeng Li, Canxing Wang, Lu Jin, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 102, 161112 (2013)
15. Electrically pumped random lasing with an onset voltage of sub-3 V from ZnO-based light-emitting devices featuring nanometer-thick MoO3 interlayers
Canxing Wang, Chunyan Lv, Chen Zhu, Zhifei Gao, Dongsheng Li, Xiangyang Ma*, Deren Yang, Nanoscale 7, 9164 (2015)
16. Low-voltage driven visible and infrared electroluminescence from light-emitting device based on Er-doped TiO2/p+-Si heterostructure
Yangyang, Lu Jin, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 100, 031103 (2012)
17. Multicolor and near-infrared electroluminescence from the light- emitting devices with rare-earth doped TiO2 films
Chen Zhu, Chunyan Lv, Zhifei Gao, Canxing Wang, Dongsheng Li, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 100, 031103 (2015)
18. Low-voltage driven similar to 1.54 mm electroluminescence from erbium-doped ZnO/p+-Si heterostructured devices: Energy transfer from ZnO host to erbium ions
Yang Yang, Yunpeng Li, Luelue Xiang, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 102, 181111 (2013)
19. Rare-Earth Doped ZnO Films: A Material Platform to Realize Multicolor and Near-Infrared Electroluminescence
Yang Yang, Yunpeng Li, Canxing Wang, Chen Zhu, Chunyan Lv, Xiangyang Ma*, Deren Yang, Adv. Opt. Mater. 2, 240 (2014)
20. Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon
Chunyan Lv, Chen Zhu, Canxing Wang, Yuhan Gao, Xiangyang Ma*, Deren Yang, Appl. Phys. Lett. 106, 141102 (2015)
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