胡廷伟 - 西安交通大学 - 材料科学与工程学院

个人简介

2015/10-至今，西安交通大学，材料学院与工程系，讲师 2016/003-2017/03，加州大学尔湾，物理及天文系，访问学者

研究领域

研究领域 SiC热解石墨烯的制备及STM表征

近期论文

查看导师最新文章（温馨提示：请注意重名现象，建议点开原文通过作者单位确认）

1. T.W. Hu, D.Y. Ma, F. Ma, et al., Preferred armchair edges of epitaxial graphene on 6H-SiC(0001) by thermal decomposition. Applied Physics Letters, 2012 12, 101(24): 241903. 2. T. Hu, D. Ma, F. Ma, et al., Direct and diffuse reflection of electron waves at armchair edges of epitaxial graphene . RSC Advances, 2013 10, 3(48): 25735. 3. T.W. Hu, F. Ma, D.Y. Ma, et al., Evidence of atomically resolved 6×6 buffer layer with long-range order and short-range disorder during formation of graphene on 6H-SiC by thermal decomposition. Applied Physics Letters, 2013 05, 102(17): 171910. 4. X.T. Liu, T.W. Hu, Y.P. Miao, et al., Selective growth of Pb islands on graphene/SiC buffer layers . Journal of Applied Physics, 2015 02, 117(6): 065304. 5. T.W. Hu, X.T. Liu, F. Ma, et al., High-quality, single-layered epitaxial graphene fabricated on 6H-SiC (0001) by flash annealing in Pb atmosphere and mechanism. Nanotechnology, 2015 02, 26(10): 105708. 6. X. Liu, T. Hu, Y. Miao, et al., Substitutional doping of Ag into epitaxial graphene on 6H-SiC substrates during thermal decomposition. Carbon, 2016 08, 104: 233-240.