个人简介
1991.3~1995.5 澳大利亚Monash大学,无机化学,博士 1983.9.9~1986.8 武汉理工大学材料,非晶态固体材料,硕士 1978.1~1982.1 武汉大学化学系,物理化学,学士 3. 研究工作经历 2012.9年~现在 武汉理工大学,教授; 2007-现在 英国克兰菲尔德大学高级讲师 2007.1~2012.8年Cranfield大学应用科学学院,高级讲师 1999.10~2006.12年Cranfield大学应用科学学院,高级研究员 1996.1~1999.9年Cranfield大学工业和制造科学学院,研究员 1995.8~1995.12 澳大利亚Monash大学,博士后研究 1989.9~1991.2 澳大利亚Monash大学,访问学者 1986.9~1989.9工作于武汉理工大学(原武汉工业大学)硅酸盐工程系 1982.1~1983.8工作于武汉大学(原武汉水利电力学院),物理化学助教,电动系
近期论文
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1. B. Peng, H. Fan, Q. Li, Q. Zhang, “Dielectric and tunability properties of the Pb(Mg1/3Nb2/3)1-xZrxO3 ceramics”, Journal of Alloys & compounds, 549, 283-287 (2013). 2. B. Peng, H. Fan, Q. Zhang, “Electric field-induced giant electrocaloric effect in nano-scaled antiferroelectric and ferroelectric phases coexisted relaxor Pb0.8Ba0.2ZrO3 thin film at room temperature”, published online Advanced Functional Materials, 2013. 3. B. Peng, H. Fan, Q. Zhang, “"High tunablility in (111)-oriented relaxor Pb0.8Ba0.2ZrO3 thin film with antiferroelectric and ferroelectric two-phase coexistence", published online Journal of the American Ceramic Society 2012. 4. T. Lusiola, F. Bortolani, Q. Zhang, and R. Dorey, “Molten hydroxide synthesis as an alternative to molten salt synthesis for producing K0.5Na0.5NbO3 lead free ceramics”.Journal of Materials Science, 47 (4), 1938-1942 (2012). 5. B. Peng, H. Fan and Q. Zhang, “Dielectric properties and the high tunability as well as figure of merit of the Pb[(Mg1/3Nb2/3)0.8(Sc1/2Nb1/2)0.2O3] ceramics”, Materials Research Bulletin, 47 (2012) 2051-2055. 6. B. Peng, H. Fan and Q. Zhang,“The contribution of the “extrinsic” polarizations to the dielectric tunability of Pb(Mg1/3Nb2/3)1-xTixO3relaxor ferroelectrics”, J. Am. Ceram. Soc., 95 (5), 1651-1655 (2012). 7. T. Lusiola, N. Chelwani, F. Bortolani, Q. Zhang, R. A. Dorey, “Low Temperature Production of Lead-Free Piezoelectric Thick Films” Ferroelectrics, 422, 50–54 (2011). 8. S. d’Astorg, H. Yan, M. Reece and Q. Zhang, “Hydrothermal synthesis of lead free piezoceramics”, Proceedings 2011 World Congress on Engineering and Technology, pp 686-689, Oct. 28-30, 2011, Shanghai China.