个人简介
PhD, DSc, PEng, EurIng (EU), CEng (UK), FRSC, FCGI, FAPS, FCAE, FEIC, FSPIE, FInstP, FIET, FIMMM, FAIP, FSGT
Canada Research Chair in Electronic and Optoelectronic Materials and Devices
Born in 1953, Safa Kasap grew up in London, England, and obtained a BSEE (1976), MSc (1978) and PhD (1983) from the Imperial College of Science and Technology at the University of London, specializing in optoelectronic materials and devices. In July, 1986, Professor Kasap joined the University of Saskatchewan (U of S) as an assistant professor in the Department of Electrical Engineering. Two years later he was promoted to associate professor, and in July, 1992 he was made a full professor, which is an externally reviewed appointment. During a sabbatical from the U of S (1997), Professor Kasap was a Visiting Research Scientist with Dr. John Rowlands at the Sunnybrook Hospital at the University of Toronto, where they jointly wrote a number of articles on direct conversion detectors, including the Physics Today feature article that was published in November 1997. In 2002, he was named a Canada Research Chair (Tier 1) in Electronic and Optoelectronic Materials and Devices, a seven-year appointment, which has been renewed in 2009. He is currently also the Director of the Electronic and Photonic Materials and Devices Research Laboratories in the College of Engineering. (There are eight major laboratories.)
In addition to two well-known textbooks on electronic materials and devices, and optoelectronics and photonics (with translations in Greek, Korean and Chinese), and numerous chapters in books, handbooks and encyclopedias and reviews, Safa Kasap has published more than two hundred articles in refereed international journals, as well as invited papers in a number of prestigious journals. He has been invited to present his research at numerous international conferences and, to date, has given two plenary presentations. He has participated extensively in committee work both at the U of S and in professional associations and committees outside the university. He has been a member of the editorial boards of well-known engineering journals, and since January 1998, he has been the Reviews Editor and Deputy Editor for J. Materials Science: Materials in Electronics (Springer). In 2002 and 2003 he was the Guest Editor of two prestigious special issues of the IEE Proceedings on Circuits, Devices and Systems, published by the Institution of Electrical Engineers; these issues were entitled “Selected Topics on Electronic Noise,” and “Amorphous and Microcrystalline Semiconductors.” Dr. Kasap has been the Chair of the International Advisory Committee and Chair of the Program Committee of the International Conference on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA (Darwin, 2006 and London, 2007, both sponsored by Springer). He was the Conference Chair of ICOOPMA2008, July 2008, held in Edmonton, Canada (http://icoopma2008.usask.ca). He is a member of the program and international advisory committees of the Canadian Semiconductor Technology Conference (CSTC), the International Conference on Photo-Excited Processes and Applications (ICPEPA), The International Symposium on Non-Oxide Glasses (ISNOG) and the International School on Condensed Matter Physics (ISCMP). Recently, Dr. Peter Capper (UK) and Professor Kasap edited a major comprehensive reference work entitled The Springer Handbook of Electronic and Photonic Materials that has 55 chapters and 1400 pages which has been published by Springer (Heidelberg, Germany, 2006). He has just completed writing a new major reference book (with two other authors, Harry Ruda and Yann Boucher) entitled The Cambridge Illustrated Handbook of Optoelectronics and Photonics, Cambridge University Press, 2009.
Professor Kasap is currently involved in eight funded research projects supported by grants from NSERC and industry. His most important project is on enhancing the properties x-ray photoconductors for x-ray image detectors, and developing new models for these novel direct conversion detectors. His other projects involve rare-earth (Er) doped glasses for photonics, Sm and Eu doped fluorozirconate glasses as scintillators and phosphors for medical imaging, and excess noise in devices. His pioneering works in the last twenty years on a-Se alloys was responsible for the development of the x-ray photoconductor alloy material used in recently commercialized a-Se direct conversion x-ray image detectors for medical imaging; these detectors have shown to have the highest resolution. His research funds to date total over $11 million. He has supervised 23 MSc and 7 PhD theses and 19 PDFs and numerous research associates to date. Many of his past students and PDFs currently hold key positions in industry and academia. In 2006, he gave the Georgi Nadjakoff Memorial Lecture, which is the most prestigious plenary lecture in the International School on Condensed Matter Physics (14th ISCMP, Varna, September 2006).
Among Professor Kasap’s honours and awards received to date is a DSc in Engineering (1996) from the University of London, for his distinct contributions to materials science in electrical engineering. He is a Fellow of the Royal Society of Canada, the Canadian Academy of Engineering, the Engineering Institute of Canada, the American Physical Society, the Institution of Electrical Engineers (now the Institution of Engineering and Technology), the Institute of Materials (IOM3), the Institute of Physics, the Society for Glass Technology, and the Australian Institute of Physics and the SPIE. He was awarded a Fellow of the City and Guilds London Institute (FCGI) in the UK for his outstanding contributions to engineering education; FCGI is only given to a few individuals who have been recognized for their societal contributions, including contributions to education and vocational training
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1. Safa Kasap, K. Koughia, Gokulakrishnan Soundararajan1, M.G. Brik, " Optical and Photoluminescence Properties of Erbium-Doped Chalcogenide Glasses (GeGaS:Er)", IEEE Journal of Selected Topics in Quantum Electronics, [IEEE, in press, 2008]
2. W. C. Tan, S. Kobayashi, T. Aoki, R.E. Johanson and Safa Kasap, "Optical properties of amorphous silicon nitride thin-films prepared by VHF-PECVD using silane and nitrogen", Journal of Materials Science: Materials in Electronics, 2008.
[Springer, print version in press, 2008; available online at http://www.springerlink.com; ISSN: 1573-482X (Online); DOI: 10.1007/s10854-007-9422-2)
3. Z. G. Ivanova, C. Koughia, G. Soundararajan, J. Heo, D. Tonchev, M. Jayasimhadri, S. O. Kasap, "The influence of CsBr addition on optical and thermal properties of GeGaS glasses doped with erbium", Journal of Materials Science: Materials in Electronics, 2008.
[Springer, print version in press, 2008; available online at http://www.springerlink.com; ISSN: 1573-482X (Online); DOI: 10.1007/s10854-008-9660-y)
4. C. Koughia, G. Soundararajan, S. O. Kasap, T. W. Allen, C. Haugen, R. Decorby, N. Ohrui, T. Aoki, and C. Fujihashi, “Characterization Of 4I9/2↔4F3/2 Optical Transitions In Trivalent Nd3+ Ions In GaLaS Glass”, Journal of Materials Science: Materials in Electronics, 2008.
[Springer, print version in press, 2008; available online at http://www.springerlink.com; ISSN: 1573-482X (Online); DOI: 10.1007/s10854-007-9423-1)
5. J. Gutwirth, T. Wágner, P. Němec, S.O. Kasap and M. Frumar, "Thermal and optical properties of AgSbS2 thin films prepared by pulsed laser deposition (PLD)" J. Non-Crystalline Solids, 2008
[Elsevier, print version in press, 2008; available online at http://www.sciencedirect.com; DOI:10.1016/j.jnoncrysol.2007.08.083]
6. K. Jandieri, O. Rubel, S. D. Branovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap, “Lucky-drift model for impact ionization in amorphous semiconductors”, Journal of Materials Science: Materials in Electronics, 2008. [Springer, in press, 2008]
7. C. Koughia and S. O. Kasap, “Excitation diffusion due to photon trapping in GeGaSe glasses heavily doped with Er3+”, Journal of Materials Science: Materials in Electronics, 2007. [Springer, in press, 2008]
8. A. Reznik, S.D. Baranovskii, O. Rubel, K. Jandieri, S.O. Kasap, Y.Ohkawa, M. Kubota and K. Tanioka, J. A. Rowlands, "Avalanche multiplication in amorphous selenium and its utilization in imaging", J. Non-Crystalline Solids [Elsevier, in press, 2008]
JOURNAL PAPERS PUBLISHED
9. K. (Cyril) Koughia and Safa Kasap, "Excitation diffusion in GeGaSe and GeGaS glasses heavily doped with Er3+", Optics Express, 16 (11), 7709 – 7714, 2008 (The Optical Society of America, 13 May 2008, http://www.opticsexpress.org/issue.cfm)
10. C. Allen, G. Belev, Robert Johanson and S.O. Kasap, " Relaxation of electrical properties of stabilized amorphous selenium based photoconductors", J. Non-Crystalline Solids, 354, 2711–2714, 2008 (Elsevier, 2008)
11. K. Jandieri, O. Rubel, S.D. Baranovskii, A. Reznik, J.A. Rowlands and S.O. Kasap, " Scattering and movement asymmetry in the one-dimensional lucky-drift simulation of the avalanche processes in disordered semiconductors", Journal of Non-Crystalline Solids, 354, 2657-2661, 2008.
[Available online 1 February 2008 at http://www.sciencedirect.com, Elsevier, in press, 2008]
12. George Belev, Safa Kasap (University of Saskatchewan) and J.A. Rowlands, David Hunter and Martin Yaffe (Sunnybrook Hospital, University of Toronto), "Dependence of the electrical properties of stabilized a-Se on the preparation conditions and the development of a double layer x-ray detector structure", Current Applied Physics, 8, 383-387, 2008 [Elsevier. Available online 1 November 2007]
13. A. Reznik, S. D. Baranovskii, O. Rubel, G. Juska, S. O. Kasap, Y. Ohkawa, K. Tanioka, and J. A. Rowlands, “Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon”, Journal of Applied Physics, 102, 53711–53718, 2007. [Published 1 September 2007; available online 14 September 2007]
14. K. Jandieri, O. Rubel, S. D. Baranovskii, A. Reznik, J. A. Rowlands, and S. O. Kasap, " One-dimensional lucky-drift model with scattering and movement asymmetries for impact ionization in amorphous semiconductors", Physica Status Solidi C (Current Topics in Solid State Physics), 5 (3), 796–799, 2008. [Wiley. Available online 30 January 2008]
15. D. M. Hunter, G. Belev, G. DeCrescenzo, S. O. Kasap, J. G. Mainprize, J. A. Rowlands, C. Smith, T. Tumer, V. Verpakhovski, S. Yin and M. J. Yaffe, “The dependence of the modulation transfer function on the blocking layer thickness in amorphous selenium x-ray detectors”, Medical Physics, 34 (8), 3358–3373, August 2007. [Published 27 July 2007]
16. G. Belev, D. Tonchev, B. Fogal, C. Allen and S.O. Kasap, "Effects of Oxygen and Chlorine on Charge Transport in Vacuum Deposited Pure a-Se Films", Journal of Physics and Chemistry of Solids, 68 (5–6), 972–977, 2007 [May-June]
17. J. Gutwirth, T. Wágner, P. Bezdička, Mil. Vlček, S.O. Kasap and M. Frumar, "Influence of silver concentration in Agx(Sb0.33S0.67)100−x thin amorphous films on photoinduced crystallization", Journal of Non-Crystalline Solids, 353 (13–15), 1431–1436 [15 May 2007]
18. M. Krbal, T. Wagner, T. Srba, J. Schwarz, J. Orava, T. Kohoutek, V. Zima, L. Benes, S.O. Kasap and M. Frumar, "Properties and structure of Agx(As0.33S0.67)100− x bulk glasses" Journal of Non-Crystalline Solids, 353 (13–15), 1232–1237 [15 May 2007]
19. Koichi Shimakawa, Kenji Fukami, Hiroki Kishi, George Belev, and Safa Kasap, " X-ray Induced Effects on Photocurrents in Amorphous Se Films", Japanese Journal of Applied Physics, 46 (9), L192–L195, 2007 [Available online 23 February 2007; http://jjap.ipap.jp]
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