研究领域
Inorganic & Materials Chemistry
My research activities bridge the areas of inorganic chemistry, applied physics and materials science of semiconductor and refractory materials. The design, preparation and applications of novel solid state and molecular systems are particularly emphasized. Current thrusts include: (a) synthesis of purpose-built, main group inorganic hydrides with tailored reactivities and stoichiometries, enabling formation of functional material architectures that cannot be obtained by conventional routes, (b) growth of silicon-based photonic materials for the development of prototype photodetectors, modulators, and multijunction photovoltaic devices, (c) integration of dissimilar materials with Si technologies (including III-V and II-VI compounds for monolithic integration) via epitaxy driven synthesis methods, (d) advanced wide band gap semiconductor materials for breakthrough applications in solar energy, solid state lighting and optoelectronics semiconductors, (e) solid-state inorganic chemistry based on light elements (refractory carbides, nitrides, borides and C-N frameworks).
近期论文
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“Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys ” J.D. Gallagher, Chi Xu, Liying Jiang, John Kouvetakis and José Menéndez, submitted, Applied Physics Letters .
“Electrical characterization studies of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates”Thomas R. Harris, Mee-Yi Ryu, Yung Kee Yeo, Richard T. Beeler, John Kouvetakis, submitted, Current Applied Physics.
“Rational design of mono-crystalline Ge5-2y(InP)y/Ge/Si(100) semiconductors: Synthesis and fundamental properties”P. E. Sims, A.V.G. Chizmeshya, L. Jiang, R.T. Beeler, C. D. Poweleit, J. Gallagher, D. J. Smith, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society135(33), 12388-12399 (2013).
“Optical properties of Ge1-x-ySixSny alloys with y > x: direct band gaps beyond 1550 nm” Chi Xu, Liying Jiang, J. Kouvetakis and J. Menendez, Applied Physics Letters 103, 072111, 1-4 (2013).
“Synthetic routes and optical properties of Sn-rich Ge1-x-ySixSny alloys: tunable direct-gap photoluminescence beyond 1.55 um” Chi Xu, Richard T. Beeler, Liying Jiang, James Gallagher, Ruben Favaro, José Menéndez and John Kouvetakis, in press, Thin Solid Films.
“Bandpap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices” Richard T. Beeler, James Gallagher, Chi Xu, Liying Jiang, Charutha Senaratne, David J. Smith, José Menéndez, A.V.G. Chizmeshya, and John Kouvetakis, ECS Journal of Solid State Science and Technology 2(9), Q172-Q177 (2013).
“Fundamental experimental and theoretical aspects of high-order Ge-hydride chemistry for versatile low-temperature Ge-based materials fabrication”G. Grzybowski, A.V.G. Chizmeshya, C. Senaratne, J. Menendez and J. Kouvetakis, Journal of Materials Chemistry C: Materials for Optical and Electronic Devices 1(34), 5223-5234.
“Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content ” Mee-Yi Ryu, Tom R. Harris, Y.K. Yeo, R.T. Beeler and J. Kouvetakis, Applied Physics Letters 102, 171908 (2013).
“New Strategies for Ge on Si materials and devices: Fabrication based on non conventional hydride chemistries: The tetragermane case” Chi Xu, R.T. Beeler, Liying Jiang, G. Grzybowski, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis, Semiconductor Science and Technology 28, 105001 (2013).
“Nanoscale assembly of Silicon like Al(As1-xNx)ySi5-2y alloys: Fundamental theoretical and experimental studies of structural and optical properties” L. Jiang, P. E. Sims, R. T. Beeler, G. Gryzbowski, A.V.G. Chizmeshya, D.J. Smith, J. Kouvetakis, and J. Menéndez, Physical Review B 88, 045208, 1-10, (2013).
“Molecular synthesis of high-performance near-IR photodetectors with independently tunable structural and optical properties based on Si-Ge-Sn” Chi Xu, R.T. Beeler G. Grzybowski, A.V.G Chizmeshya J. Menendez and J. Kouvetakis Journal of the American Chemical Society 134(51), 20756-20767 (2012).
"Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4" R.T. Beeler, D.J. Smith, J. Menéndez and J. Kouvetakis, Applied Physics Letters 101(22), 221111(2012).
“Synthesis of monocrystalline silicon-like (III-V)-(IV)3 semiconductors” A.V.G. Chizmeshya, J. Kouvetakis, R. Beeler and J. Menendez, Electrochemical Transactions 50 (9), 623-634 (2012).
"GeSn alloys on Si using deuterated stananne and trigermane: Synthesis and properties" G. Grzybowski, R.T. Beeler, L. Jiang, D.J. Smith, J. Kouvetakis, and J. Menéndez Electrochemical Transactions 50 (9) 865-875 (2012).
“High performance Group IV photodiodes with tunable absorption edges based on ternary SiGeSn alloys” R.T. Beeler, J. Menéndez, D.J. Smith, and J. Kouvetakis, Electrochemical Transactions. 50 (9), 591-599 (2012).
“Next generation of Ge1-ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission”, G. Grzybowski, L. Jiang, R.T. Beeler, D.J. Smith, J. Menéndez and J. Kouvetakis, Applied Physics Letters 101(7), 072105/1-072105/5 (2012).
Degenerate parallel conducting layer and conductivity type conversion observed from p-Ge1-ySny (y=0.06%) grown on n-Si substrates” Mee-Yi Ryu, Y. K. Yeo, Mohamed Ahoujja, Tom Harris, Richard Beeler, and John Kouvetakis, Applied Physics Letters 101, 131110 (2012).
“Monocrystalline Si3Al(As1-xNx) and Si3Al(P1-xNx) alloys with diamond-like structures: New chemical approaches to Si integration”. J. Kouvetakis, A.V.G Chizmeshya, T Watkins, G. Grzybowski, L. Jiang, R. T Beleer, and J. Menéndez. Chemistry of Materials 24(16), 3219-3230 (2012)
“SiGeSn photodiodes with 1eV optical gaps integrated on Si(100) and Ge(100) platforms”: R. Beeler, D. J. Smith, J. Menendez and J. Kouvetakis IEEE Journal of Photovoltaics 3(4) 434-440 (2012).
“Ultra low-temperature epitaxy of Ge-based semiconductor and optoelectronic structures on Si(100): Introducing higher order germanes (Ge3H8, Ge4H10)” G. Grzybowski, R. Beeler, A.V.G. Chizmeshya, T. Watkins, L. Jiang and J. Kouvetakis Chemistry of Materials 24(9), 1619-1628 (2012).
“Synthesis and bonding and optical properties of monocrystalline Al(As1-xPx)Si3 alloys on Si(100)” G. Grzybowski, T. Watkins, L. Jiang, D.J. Smith, A.V.G. Chizmeshya, J. Menéndez and J. Kouvetakis Chemistry of Materials 24(12), 2347-2355 (2012).
"(Si)5-2y(AlP)y alloys assembled on Si(100) from Al-P-Si3 building units" ” T. Watkins, L. Jiang, D. J. Smith, C. Xu, A.V.G Chizmeshya, D.J. Smith, J. Menéndez and J. Kouvetakis. Applied Physics Letters 100, 022101 (2012).
“Nanosynthesis routes to new tetrahedral crystalline solids: Silicon-like Si3AlP” T. Watkins, A. V.G Chizmeshya, L. Jiang, D. J. Smith, R. Beeler, G. Grzybowski, C. Poweleit, J. Menéndez and J. Kouvetakis, Journal of the American Chemical Society 133(40), 16212-16218 (2011).