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个人简介

教育背景: 1981.09-1985.07: 吉林大学电子科学学院半导体物理与器件专业,理学学士 1989.09-1992.07:中国科学院长春物理研究所凝聚态物理专业,理学硕士 1995.12-2000.03:日本长冈技术科学大学信息科学与控制工程专业,工学博士 工作经历: 1985.07-1996.12:中国科学院长春物理研究所,副研究员 2000.06-2007.10:中国科学院长春光学精密机械与物理研究所,研究员,博士生导师 2007.11-现在:深圳大学材料学院,教授,博士生导师

研究领域

1. 氧化锌基半导体发光材料与器件 2. 日盲紫外光电探测材料及器件 3. 氧化物半导体透明电子学材料与器件 4. 纳米半导体材料的制备及其光电器件

近期论文

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(1) S. Han, S.M. Liu, Y.M. Lu*, P.J. Cao, W.J. Liu, Y.X. Zeng, F. Jia, X. Liu, D.L. Zhu, “High performance solar-blind ultraviolet photo detector based on mixed-phase MgZnO thin film with different interfaces deposited by PLD method,” Journal of Alloys and Compounds, vol, 694, pp. 168-174, 2017. (2) S. Han, S. M. Liu, W. J. Liu, P. J. Cao, Y. M. Lu*, Y. X. Zeng, F. Jia, X. Liu, D. L. Zhu, and S. C. Su, “Effect of Substrate Surface Atom Constitution and The Migration Characteristics of Reactive Atoms on Crystal Structure of MgxZn1−xO Thin Films Deposited by PLD Method,” The Journal of Physical Chemistry C, vol. 120, pp. 12568-12577, 2016. (3) X.Liu, Y.Lu*, W. Yu, J. Wu, J. He, D. Tang, Z. Liu, P. S/O Somasuntharam,D. Zhu, W. Liu, P. Cao, S. Han, S. Chen, and L. S. Tan, “AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating,” Scientific Report, 2015,5,14092. (4) Wenjun Liu, Qiaoling Huang, Tengji Huang, Peijiang Cao, Shun Han, Fang Jia, Deliang Zhu, Xiaocui Ma, and Youming Lu*, “Secondary Growth” in Hydrothermal Synthesis of Aligned ZnO Nanostructures and Its Application in Dye-Sensitized Solar Cells,Journal of Nanoscience and Nanotechnology,2015,15:1-7 (5) S. Han, S. Peng, Y. M. Lu*, P. J. Cao, W. J. Liu, Y. X. Zeng, F. Jia, and D. L. Zhu, UV absorption characteristics and element composition of (200) and (111) orientation cubic MgZnO thin films deposited at different temperature by PLD method, J Mater Sci: Mater Electron, 29,1-7,2015. (6) S. Han, Y.K. Shao, Y.M. Lu*, P.J. Cao, W.J. Liu, Y.X. Zeng, F. Jia, D.L. Zhu, Growth of (111) and (2 0 0) orientation cubic MgZnO thin films under different oxygen flow rate by PLD method and its difference in element composition and optical absorption characteristics, Materials Research Bulletin 64, 76–81 ,2015. (7) S. Han, Y.K. Shao, Y.M. Lu*, P.J. Cao, F. Jia, Y.X. Zeng, W.J. Liu, D.L. Zhu, X.C. Ma, Formation of metastable rock salt ZnO on surface of cubic MgZnO thin films at low temperature by PLD method, Materials Chemistry and Physics 165 (2015) 108e112 (8) X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu*, W. Yu*, D. Zhu,W.Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: Effect of CHF3 treatment,” Applied Physics Letter, vol. 107, 101601, 2015. (9) S.Han, Y.K.Shao, Y.M. Lu*, P. J. Cao, F.Jia, Y.X.Zeng, W. J. Liu, D. L. Zhu, X. C. Ma, Effect of different migration energy for reaction atoms on growth orientation and optical absorption characteristics of cubic MgZnO thin films under different pressure by PLD method,Journal of Crystal Growth, 408, 125–128,2014. (10) X. Liu, M. A. Bhuiyan, P. S/O Somasuntharam, C. B. Soh, Z. Liu, D. Z. Chi,W. Liu, W. Yu, Y. Lu*, L. S. Tan,Y.-C. Yeo, “High Voltage AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Regrown In0.14Ga0.86N Contact Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process,” Applied Physics Express, 2014, 7, 126501, 1-4. (11) Y. M. Lu*, X. P. Li, S. C. Su, P. J. Cao, F. Jia, S. Han, Y. X. Zeng, W. J. Liu and D. L. Zhu,The effect of O2 partial pressure on the photoluminescence of ZnO thin films grown by pulsed laser deposition, Journal of Luminescence, 152,254-257,2014 (12) P. J. Cao, S. Han, W. J. Liu, F. Jia, Y. X. Zeng, D. L. Zhu and Y. M. Lu*,Effect of oxygen flowrate on optical and electrical properties in Al doped ZnO thin films,Materials Technology: Advanced Performance Materials, VOL29, NO6, 336-340, 2014 (13) D.L. Zhu, Q. Wang, S. Han, P.J. Cao, W.J. Liu, F. Jia, Y.X. Zeng, X.C. Ma, Y.M. Lu*,Optimization of process parameters for the electrical properties in Ga-doped ZnO thin films prepared by r.f. magnetron sputtering, Applied Surface Science, 298, 208-213, 2014 (14) P. J. Cao, W. J. Liu, F. Jia, Y. X. Zeng, D. L. Zhu and Y. M. Lu*, Effect of O2 partial pressure on optical and electrical properties in Al doped ZnO thin films, Materials Technology: Advanced Performance Materials, VOL 29 NO 5,275-280,2014 (15) Y. M. Lu*, X. P. Li, P. J. Cao, S. C. Su, F. Jia, S. Han, W. J. Liu, D. L. Zhu, X. C. Ma, Study of Ultraviolet Emission Spectra in ZnO Thin Films, Journal of Spectroscopy, 2013, 797232,1-7 (16) S. Han, Y.K. Shao, Y.M. Lu*, P.J. Cao, F. Jia, Y.X. Zeng, W.J. Liu, D.L. Zhu, X.C. Ma, Effect of oxygen pressure on preferred deposition orientations and optical properties of cubic MgZnO thin films on amorphous quartz substrate, Journal of Alloys and Compounds 559, 2013, 209–213 (17) D. L. Zhu, H. F. Xiang, P. J. Cao, F. Jia, W. J. Liu, S. Han, X. C. Ma, Y. M. Lu*, Influence of H2 introduction on properties in Al-doped ZnO thin films prepared by RF magnetron sputtering at room temperature, Journal of Materials Science: Materials in Electronics December 2012, 10854, 1042-9 (18) Y. M. Lu*,P.J.Cao, W.J.Liu, D.L.Zhu, X.C.Ma, D.Z.Shen, X.W.Fan, Handbook of Zinc Oxide and Related Materials, Taylor and Francis/CRC Press, Optical properties of MgZnO/ZnO heterostructures grown on sapphire substrates by plasma assisted molecular beam epitaxy, Vol. 2, Chapter9, p217-248, 2012. (19) S.C.Su, Y.M.Lu*, G.Z.Xing, T.Wu, “Spontaneous and stimulated emission of ZnO/Zn0.85Mg0.15O asymmetric double quantum wells”, Superlattices and Microstructures 2010, 48(5), 485. (20) S.C. Su, Y.M. Lu*, Z.Z. Zhang, C.X. Shan, B.H. Li, D.Z. Shen, B. Yao, J.Y. Zhang, D.X. Zhao, and X.W. Fan, “Optical Properties of ZnMgO Nanowalls Grown by Plasma-Assisted Molecular Beam Epitaxy”, Journal of Nanoscience and Nanotechnology 2010, 10(3), 1681.

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