Mi, Zetian - McGill University - Department of Electrical and Computer Engineering

个人简介

My group is focused on the investigation of semiconductor nanostructures and their application in electronic, photonic, and solar energy devices and systems. My primary research areas include: Epitaxial growth and fundamental properties of semiconductor nanostructures, including quantum dots, nanowires, and two-dimensional atomic crystals; III-nitride materials and devices; Light emitting diodes, lasers, and Si photonics; Artificial photosynthesis, solar fuels and solar cells; III-nitride and diamond based electronic devices.

研究领域

Semiconductor nanostructures, including quantum dots, nanowires, and two-dimensional atomic crystals III-nitride materials and optoelectronic devices Light emitting diodes, lasers, and Si photonics Artificial photosynthesis, solar fuels, and solar cells III-nitride and diamond based electronic devices

近期论文

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L. Li, Y. Wang, S. Vanka, X. Mu, Z. Mi, and C.J. Li “Nitrogen photofixation over III‐nitride nanowires assisted by ruthenium clusters of low atomicity”, Angewandte Chemie, vol. 129, 8827, 2017. D. A. Laleyan, S. Zhao, S. Y. Woo, H. N. Tran, H. B. Le, T. Szkopek, H. Guo, G. A. Botton, and Z. Mi “AlN/h-BN heterostructures for Mg dopant-free deep ultraviolet photonics”, Nano Lett., vol. 17, 3737, 2017. N. H. Tran, B. H. Le, S. Zhao, and Z. Mi, “On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures”, Appl. Phys. Lett., vol. 110, 032102, 2017. S. M. Sadaf, S. Zhao, Y. Wu, Y.-H. Ra, X. Liu, S. Vanka, and Z Mi, “An AlGaN core-shell tunnel junction nanowire light-emitting diode operating in the ultraviolet-C band”, Nano Lett., vol. 17, 1212, 2017. S. Fan, I. Shih, and Z. Mi, “A monolithically integrated InGaN nanowire/Si tandem photoanode approaching the ideal bandgap configuration of 1.75 eV/1.13 eV,” Adv. Energy Mater., vol. 7, 1600952, 2017. Y.-H. Ra, R. Wang, S. Y. Woo, M. Djavid, S. M. Sadaf, J. Lee, G. A. Botton, and Z. Mi, “Full-color single nanowire pixels for projection displays,” Nano Lett., vo. 16, 4608, 2016. S. Zhao, X. Liu, Y. Wu, and Z. Mi, “An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature,” Appl. Phys. Lett., vol. 109, 191106, 2016. M. G. Kibria, R. Qiao, W. Yang, I. Boukahil, X. Kong, F. A. Chowdhury, M. L. Trudeau, W. Ji, H. Guo, F. J. Himpsel, L. Vayssieres, and Z. Mi, “Atomic scale origin of long term stability and high performance of p-GaN nanowire-arrays for photocatalytic overall pure water splitting”, Adv. Mater., vol. 28, 8388-8397, 2016. B. Le, S. Zhao, X. Liu, S. Y. Woo, G. A. Botton, and Z. Mi, “Controlled coalescence of AlGaN nanowire arrays: An architecture for dislocation-free planar ultraviolet photonic device applications”, Adv. Mater., vol. 28, 8446-8454, 2016. M. G. Kibria, and Z. Mi, “Artificial photosynthesis using metal/non-metal nitride semiconductors: current status, prospects, and challenges,” J. Mater. Chem. A, vol. 4, 2801-2820, 2016.