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个人简介

Dipl., National Technical University of Athens, 1984; Ph.D., University of Minnesota, 1989. Lacey Instructor, Caltech, 1992-93; Assistant Professor, 1993-98; Associate Professor, 1999-2010; Professor, 2010-.

研究领域

Ion-surface interaction dynamics, plasma processing, materials in nanoscale confinement, nanotechnology

近期论文

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"Simulations of contact angles and ordering of mercury drops on graphite and in carbon nanotubes," A. Kutana and K.P. Giapis, Nano Lett., (submitted, 01/30/2007). "Evidence of simultaneous double-electron promotion in F+ collisions with surfaces," J. Mace, M.J. Gordon, and K.P. Giapis, Phys. Rev. Lett., 97, 257603 (2006). "A transient deformation regime in bending of single-walled carbon nanotubes," A. Kutana and K.P. Giapis, Phys. Rev. Lett., 97, 245501 (2006). "Amplitude response of single-wall carbon nanotube probes during tapping mode AFM: modeling and experiment," A. Kutana, K.P. Giapis, J.Y. Chen, and C.P. Collier Nano Lett. 6, 1669 (2006). "Neutralization of hyperthermal Ne+ on metal surfaces," A. Kutana and M.J. Gordon and K.P. Giapis, Nuclear Instr. Methods B. 248, 16 (2006). "Atomistic Simulations of Electrowetting in Carbon Nanotubes" A. Kutana and K.P. Giapis, Nano Lett. 6, 656 (2006). "Electrowetting in Carbon Nanotubes," J.Y. Chen, A. Kutana, C.P. Collier, and K.P. Giapis, Science 310, 1480 (2005). "Low-energy ion beamline scattering apparatus for surface science investigations," M.J. Gordon and K.P. Giapis, Rev. Sci. Instr. 76, 083302(2005). "Charge exchange mechanisms at the threshold for inelasticity in Ne+ collisions with surfaces," M.J. Gordon and J. Mace, and K.P. Giapis, Phys. Rev. A 72, 012904(2005). "Synthesis of blue-luminescent silicon nanoparticles using atmospheric pressure microdischarges," R. M. Sankaran, D. Holunga, R.C. Flagan, and K.P. Giapis, Nano Lett. 5, 537 (2005). "Nanoelectrode Scanning Probes from Fluorocarbon-Coated Single-Wall Carbon Nanotubes," M.J. Esplandiu, V.G. Bittner, K.P. Giapis, and C.P. Collier Nano Lett. 4, 1873 (2004). "Characterization of excimer emission from microdischarges at atmospheric pressure," R.M. Sankaran, M. Moselhy, K.H. Schoenbach and K. P. Giapis, Appl. Phys. Lett. 83, 4728 (2003). "High-pressure micro-discharges in etching and deposition applications," R. M. Sankaran and K. P. Giapis, J. Phys.D: Applied Physics 36, 2914 (2003). "Microhollow cathode sustained plasma microjets: Characterization and application to diamond deposition," R. M. Sankaran and K. P. Giapis, J. Appl. Phys. 92, 2406 (2002). "The Role of Mask Charging in Profile Evolution and Gate Oxide Degradation,” K.P. Giapis, G. S. Hwang and O. Joubert , Microelectronic Engineering 61-2, 835 (2002). "Maskless Etching of Silicon Using Patterned Microdischarges," R. M. Sankaran and K. P. Giapis, Appl. Phys. Lett. 79, 593 (2001).-----> Inside R&D report about this paper "Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging," K. P. Giapis and G. S. Hwang, Thin Solid Films 374,175 (2000). "Charging Damage during Latent Antenna Overetching," G. S. Hwang and K. P. Giapis, Appl. Phys. Lett. 74, 932 (1999). "Heavy Charging Damage during Dielectric Deposition in High-Density Plasmas," G. S. Hwang and K. P. Giapis, J. Vac. Sci. Technol. B 17, 999 (1999). "Pattern-Dependent Charging in Plasmas," G. S. Hwang and K. P. Giapis, IEEE Trans. Plasma Sci., Special Issue: Images in Plasma Science 27, 102 (1999).

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