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研究领域

晶硅异质结太阳电池、新型器件结构的硅基太阳电池,包括器件结构的设计、模拟分析及制备研究;半导体薄膜制备技术。

近期论文

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[1] 黄海宾,周慧敏,丁晶,周浪. 高方块电阻发射极晶硅太阳电池计算模拟研究,中国科技论文在线。http://www.paper.edu.cn/html/releasepaper/2012/03/647/ [2] Jiren Yuan, Honglie Shen, Haibin Huang and Xinhua Deng. Positive or negative gain: Role of thermal capture cross sections in impurity photovoltaic effect [J]. Journal of Applied Physics. 2011, 110: 104508. [3] 龚洪勇,周浪,黄海宾,向昱任,汪已琳,张东华,高江,崔冶青. PECVD法非晶硅薄膜对太阳能级n型直拉单晶硅片钝化效果的研究. 太阳能, 2013,(1):32-34. [4] 黄海宾,张东华,汪已琳,龚洪勇,高江,Wolfgang R. Fahrner, 周浪。α-SiOx:H钝化Cz-Si表面的工艺优化与机制分析[J].功能材料,2014, 45(9):9101-9103。 [5] Jiren Yuan, Honglie Shen, Lang Zhou, Haibin Huang, Naigen Zhou, Xinhua Deng, Qiming Yu. Impurity photovoltaic effect in silicon solar cells doped with two impurities. Opt. Quant. Electron. 2014,46:1457-1465. D O I 1 0 . 1 0 0 7 / s 1 1 0 8 2 - 0 1 3 - 9 8 5 9 - x [6] HUANG Haibin, SHEN Honglie, WU Tianru, LU Linfeng, TANG Zhengxia, SHEN Jiancang. Properties of boron-doped µc-Ge:H films deposited by hot-wire CVD. Journal of Wuhan University of Technology-Mater. Sci. Ed. Vol.30, No.3(2015):516-519。 [7] Yuan Ji-Ren, Shen Hong-Lie, Zhou Lang, Huang Hai-bin, Zhou Nai-Gen, Deng Xin-hua and Yu Qi-Ming. β–FiSi2 as the bottom absorber of triple-junction thin-film solar cells: A numerical study. Chin. Phys. B, Vol.23, No.3(2014),038801. [8] HUANG Haibin, GAO Jiang, Wolfgang R. Fahrner, ZHOU Lang. Theoretical analysis of the double-layer emitter with different doping concentrations for a a-Si:H/c-Si heterojunction solar cells. 中国科技论文在线. http://www.paper.edu.cn/html/releasepaper/2014/04/282/ [9] 何玉平,黄海宾*,龚洪勇,周浪. a-Si:H基薄膜中SiH及SiH2键构成对n型直拉单晶硅片钝化效果的影响研究. 真空科学与技术学报,2015,35(8):970-974. (EI) [10] 龚洪勇, 黄海宾,高江,周浪*. 低速率沉积非晶硅薄膜钝化Cz-Si片的研究 [J]. 太阳能学报,. 2015, 36(3):529-533 (EI) [11] 龚洪勇, 黄海宾, 周浪*. 晶体硅金字塔绒面结构圆化对其光反射率和非晶硅薄膜钝化效果的影响[J].人工晶体学报. 2015,44(4):913-917. (EI) [12] 宁武涛,何玉平,黄海宾*,周浪。热丝电流对HWCVD制备a-Si:H膜结构及钝化效果的影响. 半导体技术, 2015,40(8):606-610.(中文核心) [13] 何玉平,黄海宾*,周浪,宁武涛,李丹. HWCVD工艺参数对a-Si:H薄膜结构及其对单晶硅片钝化性能的影响研究. 功能材料,2015,46卷,22期:22067-22070. (EI) [14] Yuping He, Haibin Huang*, Lang Zhou, Zhihao Yue, Jiren Yuan. Effect of substrate temperature and post-deposition annealing on intrinsic a-SiOx:H film for n-Cz-Si wafer passivation. Journal of Materials Science: Materials in Electronics (JMSE). 2016, 27(5): 4659-4664. DOI: 10.1007/s10854-016-4344-5(SCI) [15] Huang Haibin, Yue Zhihao, He Yuping, Yuan Jiren, Zeng Xiaoxing, Zhou Naigen, Zhou Lang. Formation of epitaxial heavy-doped silicon films by PECVD method. Journal of Wuhan University of Technology-Mater. Sci. Ed. Accepted(SCI源刊). [16] Haibin Huang, Gangyu Tian, Tao Wang, Chao Gao, Jiren Yuan, Zhihao Yue, Lang Zhou*. Analysis on the double-layer a-Si:H emitter with different doping concentrations for a-Si:H/c-Si heterojunction solar cells. Frontiers in Energy. 2017,11(1):92-95. DOI 10.1007/s11708-016-0432-8(核心源刊,EI收录) [17] Yue Zhihao,……… Huang Haibin.Study on the effect of intrinsic electrical resistivity of silicon materials on its performance for Li-ion batteries. Materials Letters. Accepted(SCI源刊) [18] Yuping He, Haibin Huang, Lang Zhou, Zhihao Yue, JirenYuan,Naigen Zhou,Chao Gao. a-SiOx:H passivation layers for Cz-Si wafer deposited by hot wire chemical vapor deposition. Materials Science in Semiconductor Processing. 2017, 61:1-4. (SCI源刊) [19] 韩宇哲;黄海宾;周浪. 绒面类型对斜入射光下太阳电池发电能力影响的分析. 新能源进展, 04期, pp 256-260, 2015/9 [20] 周耐根; 胡秋发; 许文祥; 吴小元; 黄海宾; 周浪. 基底温度对c-Si(100)面生长a-Si∶H薄膜结构特性影响的分子动力学模拟研究. 人工晶体学报, 2014, 43(6), pp 1453-1459 (EI)

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